Abstract: A dual-port memory is accessed via a fast read port through p-channel access transistors and via a slow read/write port through n-channel access transistors. To reduce the disturbances resulting from a read operation through the read/write port, the row-line voltage applied to the gates of the n-channel access transistors is reduced to a value (e.g., 3 volts) below the value used for a write operation (e.g., 5 volts). In this manner, the lowered conductance of the n-channel access transistors during a read operation minimizes the effects of the pre-charged column conductors on the memory cell. Problems that could occur with a simultaneous read from the fast port, among others, are reduced.