Abstract: Provided is an optoelectronic device comprising an optoelectronic element and circuitry connected to the optoelectronic element, wherein the optoelectronic element comprises plural quantum dots or plural nanorods, and wherein the circuitry is configured to be capable of switching the optoelectronic element between a configuration in which the circuitry provides an effective forward bias voltage that causes the optoelectronic element to emit light and a configuration in which the circuitry provides an effective reverse bias voltage that causes the optoelectronic element to be capable of generating a photocurrent when light to which the optoelectronic element is sensitive strikes the optoelectronic element.

Abstract: Provided is a method of creating an image on an array of optoelectronic elements comprising (a) providing a device comprising an array of optoelectronic elements and circuitry connected to each optoelectronic element, wherein the optoelectronic element comprises plural quantum dots or plural nanorods, and wherein the circuitry is configured to be capable of switching each optoelectronic element independently between an effective forward bias configuration and a reverse-bias configuration, (b) imposing an effective reverse bias on two or more of the optoelectronic elements, (c) providing circuitry that will detect the onset of photocurrent from an individual effective reverse biased optoelectronic element and that will respond to the photocurrent by changing the bias on the individual optoelectronic element to an effective forward bias.

Abstract: Provided is a device comprising a light-emitting optoelectronic element and a photocurrent-generating optoelectronic element, wherein the device further comprises an opaque element that prevents light emitted by the light-emitting optoelectronic element from reaching the photocurrent-generating optoelectronic element via a pathway within the device.

Abstract: Provided is an optoelectronic device comprising an optoelectronic element and circuitry connected to the optoelectronic element, wherein the optoelectronic element comprises plural quantum dots or plural nanorods, and wherein the circuitry is configured to be capable of switching the optoelectronic element between a configuration in which the circuitry provides an effective forward bias voltage that causes the optoelectronic element to emit light and a configuration in which the circuitry provides an effective reverse bias voltage that causes the optoelectronic element to be capable of generating a photocurrent when light to which the optoelectronic element is sensitive strikes the optoelectronic element.

Abstract: Provided is a method of creating an image on an array of optoelectronic elements comprising (a) providing a device comprising an array of optoelectronic elements and circuitry connected to each optoelectronic element, wherein the optoelectronic element comprises plural quantum dots or plural nanorods, and wherein the circuitry is configured to be capable of switching each optoelectronic element independently between an effective forward bias configuration and a reverse-bias configuration, (b) imposing an effective reverse bias on two or more of the optoelectronic elements, (c) providing circuitry that will detect the onset of photocurrent from an individual effective reverse biased optoelectronic element and that will respond to the photocurrent by changing the bias on the individual optoelectronic element to an effective forward bias.

Abstract: Provided is a method of detecting the presence of an object in proximity to an optoelectronic device comprising (a) providing an optoelectronic device comprising a light-emitting optoelectronic element and a photocurrent-generating optoelectronic element, (b) imposing an effective forward bias voltage on the light-emitting optoelectronic element and an effective reverse bias voltage on the photocurrent-generating optoelectronic element, (c) bringing an object capable of scattering or reflecting light or a combination thereof to a distance of 0.1 to 5 mm from a point on the surface of the optoelectronic device from which light emerges, causing light that is emitted by the light-emitting optoelectronic element to be reflected or scattered so that the light falls upon the photocurrent-generating optoelectronic element.

Abstract: In one aspect, structures are provided that comprise (a) a one-dimensional periodic plurality of layers, wherein at least two of the layers have a refractive index differential sufficient to provide effective contrast; and (b) one or more light-emitting nanostructure materials effectively positioned with respect to the refractive index differential interface, wherein the structure provides a polarized output emission.

Abstract: In one aspect, structures are provided that comprise a photonic crystal comprising a dielectric layer comprising therein one or more light-emitting nanostructure materials. In a further aspect, structures are provided that comprise a dielectric layer comprising first and second sets of light-emitting nanostructure materials at differing depths within the dielectric layer.

Abstract: In one aspect, structures are provided that comprise (a) a one-dimensional periodic plurality of layers, wherein at least two of the layers have a refractive index differential sufficient to provide effective contrast; and (b) one or more light-emitting nanostructure materials effectively positioned with respect to the refractive index differential interface, wherein the structure provides a polarized output emission.