Abstract: The present invention provides a horizontally depleted Metal Semiconductor Field Effect Transistor (MESFET). A drain region, a source region, and a channel region are formed in the device layer such that the drain region and the source region are spaced apart from one another and the channel region extends between the drain region and the source region. First and second gate contacts are formed in the device layer on either side of the channel region, and as such, the first and second gate contacts will also reside between opposing portions of the source and drain regions. With this configuration, voltages applied to the first and second gate contacts effectively control vertical depletion regions, which form on either side of the channel region.

Abstract: Embodiments of a Low Dropout (LDO) regulator are provided in which an n-channel Metal Semiconductor Field Effect Transistor (MESFET) is utilized as a pass transistor of the LDO regulator. In one embodiment, the LDO regulator is implemented on an integrated circuit die and includes an n-channel Semiconductor-on-lnsulator (SOI) MESFET pass transistor. A voltage applied to a substrate of the SOI MESFET pass transistor is controlled to configure the LDO regulator in either an ultra-low dropout voltage mode or a high Power Supply Rejection (PSR) mode. In another embodiment, the LDO regulator includes an re-channel MESFET pass transistor and a switch that operates to disconnect the MESFET pass transistor from a supply voltage of the LDO regulator when the LDO regulator is desired to be shut off.

Abstract: The present invention provides a horizontally depleted Metal Semiconductor Field Effect Transistor (MESPET). A drain region, a source region, and a channel region are formed in the device layer such that the drain region and the source region are spaced apart from one another and the channel region extends between the drain region and the source region. First and second gate contacts are formed in the device layer on either side of the channel region, and as such, the first and second gate contacts will also reside between opposing portions of the source and drain regions. With this configuration, voltages applied to the first and second gate contacts effectively control vertical depletion regions, which form on either side of the channel region.