Patents by Inventor Trevor Thornton

Trevor Thornton has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7994593
    Abstract: A solid-state field-effect transistor device for detecting chemical and biological species and for detecting changes in radiation is disclosed. The device includes a quantum wire channel section to improve device sensitivity. The device is operated in a fully depleted mode such that a sensed biological, chemical or radiation change causes an exponential change in channel conductance of the transistor.
    Type: Grant
    Filed: June 9, 2008
    Date of Patent: August 9, 2011
    Assignee: The Arizona Board of Regents
    Inventors: Bharath R. Takulapalli, Gerard Laws, John Devens Gust, Jr., Trevor Thornton
  • Publication number: 20090014757
    Abstract: A solid-state field-effect transistor device for detecting chemical and biological species and for detecting changes in radiation is disclosed. The device includes a quantum wire channel section to improve device sensitivity. The device is operated in a fully depleted mode such that a sensed biological, chemical or radiation change causes an exponential change in channel conductance of the transistor.
    Type: Application
    Filed: June 9, 2008
    Publication date: January 15, 2009
    Inventors: Bharath R. Takulapalli, Gerard Laws, John Devens Gust, JR., Trevor Thornton
  • Publication number: 20050184343
    Abstract: An integrated circuit has first and second complementary MOSFETs and first and second complementary MESFETs fabricated on a common substrate. An insulating layer is disposed on the common substrate. The active region uses salicide block oxide layers to align the drain and source regions to the gate. Alternatively, the active region uses poly-silicon separators surrounded by side wall oxide spacers to align the drain and source regions to the gate. The MESFET may have a drift region between the gate terminal and drain region for high voltage applications.
    Type: Application
    Filed: April 22, 2005
    Publication date: August 25, 2005
    Inventors: Trevor Thornton, Michael Wood
  • Publication number: 20040238379
    Abstract: A method for electronically detecting hybridization of a probe nucleic acid and a target nucleic acid is disclosed. The probe nucleic acid (130) is attached to an open semiconductor channel (110) in a back-gated field effect transistor (120). A target nucleic acid is provided on the semiconductor channel, and electrical charateristics, such as the drain to source current, are monitored for changes indicating that hybridization has occured.
    Type: Application
    Filed: February 6, 2004
    Publication date: December 2, 2004
    Inventors: Stuart Lindsay, Trevor Thornton