Abstract: Provided are: a novel wiring board having flexibility derived from a resin board and the high electrical conductivity derived from a metal wiring as well as high adhesion between the metal wiring and the insulating resin board; and a method for manufacturing the wiring board without using a photolithography process. A wiring board according to the present invention comprises a resin board and a metal wiring, the metal wiring including a sintered body of metal particles, the sintered body including a plurality of voids having opening portions extending toward the resin board, parts of the resin board entering the voids from the opening portions.

Abstract: The present invention is provided with an interface layer that minimizes interdiffusion between a silicon substrate and copper electrode wiring that are used as a solar cell, that improves the adhesive properties of copper wiring, and that is used to obtain ohmic contact characteristics. This silicon solar cell comprises a silicon substrate and is provided with a metal oxide layer that is formed on the silicon substrate and wiring that is formed on the metal oxide layer and that comprises mainly copper. The metal oxide layer contains (a) one of either titanium or manganese, (b) one of vanadium, niobium, tantalum, or silicon, and (c) at least one of copper and nickel. In addition, the metal oxide layer comprises copper or nickel as metal particles that are diffused in the interior of the metal oxide layer.

Abstract: The present invention is provided with an interface layer that minimizes interdiffusion between a silicon substrate and copper electrode wiring that are used as a solar cell, that improves the adhesive properties of copper wiring, and that is used to obtain ohmic contact characteristics. This silicon solar cell comprises a silicon substrate and is provided with a metal oxide layer that is formed on the silicon substrate and wiring that is formed on the metal oxide layer and that comprises mainly copper. The metal oxide layer contains (a) one of either titanium or manganese, (b) one of vanadium, niobium, tantalum, or silicon, and (c) at least one of copper and nickel. In addition, the metal oxide layer comprises copper or nickel as metal particles that are diffused in the interior of the metal oxide layer.