Abstract: Embodiments relate to device, system and methods for personalised drug dosing via a device, the device comprising a first chamber comprising a drug reservoir unit; a second chamber comprising an electronic unit comprising a control component; a third chamber comprising a drug delivery unit and a flow control component controlled via the electronic unit; wherein the device is fully implanted in a subject during its intended operational modes, and wherein the device releases a body temperature stable drug formulation into the subject at a flow rate such that a variation in the flow rate is within ±15% by volume.

Abstract: System and methods are provided for driving one or more light emitting diodes (LEDs) to reduce audible noise. An example system includes a switching component, a system controller, and a current generator. The switching component is configured to receive a dimming signal with a predetermined dimming frequency and configured to switch on or off the one or more LEDs in response to the dimming signal, the predetermined dimming frequency being outside a frequency band of the audible noise. The system controller is configured to receive a feedback signal related to a LED current that flows through the one or more LEDs and configured to generate a drive signal. Additionally, the current generator is configured to receive the drive signal, to generate a charging current to store energy during a charging period and to generate the LED current during a discharging period.

Abstract: System and methods are provided for driving one or more light emitting diodes (LEDs) to reduce audible noise. An example system includes a switching component, a system controller, and a current generator. The switching component is configured to receive a dimming signal with a predetermined dimming frequency and configured to switch on or off the one or more LEDs in response to the dimming signal, the predetermined dimming frequency being outside a frequency band of the audible noise. The system controller is configured to receive a feedback signal related to a LED current that flows through the one or more LEDs and configured to generate a drive signal. Additionally, the current generator is configured to receive the drive signal, to generate a charging current to store energy during a charging period and to generate the LED current during a discharging period.

Abstract: System and methods are provided for driving one or more light emitting diodes (LEDs) to reduce audible noise. An example system includes a switching component, a system controller, and a current generator. The switching component is configured to receive a dimming signal with a predetermined dimming frequency and configured to switch on or off the one or more LEDs in response to the dimming signal, the predetermined dimming frequency being outside a frequency band of the audible noise. The system controller is configured to receive a feedback signal related to a LED current that flows through the one or more LEDs and configured to generate a drive signal. Additionally, the current generator is configured to receive the drive signal, to generate a charging current to store energy during a charging period and to generate the LED current during a discharging period.

Abstract: System and methods are provided for driving one or more light emitting diodes (LEDs) to reduce audible noise. An example system includes a switching component, a system controller, and a current generator. The switching component is configured to receive a dimming signal with a predetermined dimming frequency and configured to switch on or off the one or more LEDs in response to the dimming signal, the predetermined dimming frequency being outside a frequency band of the audible noise. The system controller is configured to receive a feedback signal related to a LED current that flows through the one or more LEDs and configured to generate a drive signal. Additionally, the current generator is configured to receive the drive signal, to generate a charging current to store energy during a charging period and to generate the LED current during a discharging period.

Abstract: Electron generation apparatuses are disclosed that can include a power source coupled to a first electrode, and a switch between the power source and the first electrode. Mass spectrometry instruments are disclosed that can include a power source coupled to a first electrode, and a switch between the power source and the first electrode. Methods of generating electrons are provided that can include generating different voltage differentials across a cell, with at least one of the voltage differentials generating electrons from gaseous material, and discharging at least some of the electrons from the cell. Mass spectrometry methods are also provided that can include providing sample proximate a glow discharge ionization source, and generating a pulse of electrons from the ionization source according to an ionization parameter to ionize at least a portion of the sample.

Abstract: A system and method for introducing and analyzing a sample containing an analyte using an ion mobility spectrometer are described. The system includes a temperature module for adjusting the temperature of the sample according to temperature instructions received, and a split ratio module for adjusting the split ratio according to split ratio instructions received. An ion mobility analyzer determines an ion mobility of the analyte. The ion mobility analyzer collects a plasmagram of the analyte to identify and quantitate the analyte.

Abstract: A blowout preventer having a main body, a ram system with ram apparatus, a movement system with movable shaft apparatus connected to the ram apparatus, the ram apparatus movable from a first open-ram position to a second closed-ram position, the movable shaft apparatus including a locking shaft portion having a tapered portion, a locking system for selectively locking the ram apparatus in the closed position and having locking member apparatus having a primary tapered surface in contact with the locking shaft portion which is movable with the so that the primary tapered surface contacts the tapered portion of the locking shaft portion to releasably lock the movable shaft apparatus.

Abstract: The invention is a method of etching an integrated circuit (IC) structure that includes a metal hard mask layer. The etching of the metal hard mask layer is performed by first feeding a gas mixture comprising a fluorine containing gas and oxygen (O2) gas to a reactor. The method then proceeds to generate a plasma that etches the metal hard mask layer. The method can be applied to either performing a via etch or a trench etch. Additionally, the invention teaches the removal of a photoresist layer without affecting the metal hard mask layer.

Abstract: A system and method for introducing and analyzing a sample containing an analyte using an ion mobility spectrometer are described. The system includes a temperature module for adjusting the temperature of the sample according to temperature instructions received, and a split ratio module for adjusting the split ratio according to split ratio instructions received. An ion mobility analyzer determines an ion mobility of the analyte. The ion mobility analyzer collects a plasmagram of the analyte to identify and quantitate the analyte.

Abstract: A semiconductor manufacturing process wherein an organic anti-reflective coating (ARC) is plasma etched with selectivity to an underlying dielectric layer and/or overlying photoresist. The etchant gas is fluorine-free and includes a carbon-containing gas such as CO gas, a nitrogen-containing gas such as N2, an optional oxygen-containing gas such as O2, and an optional inert carrier gas such as Ar. The etch rate of the ARC can be at least 10 times higher than that of the underlying layer. Using a combination of CO and O2 with N2 and a carrier gas such as Ar, it is possible to obtain dielectric:ARC selectivity of at least 10. The process is useful for etching contact or via openings in damascene and self-aligned contact or trench structures.

Abstract: A semiconductor manufacturing process wherein an organic anti-reflective coating (ARC) is plasma etched with selectivity to an underlying dielectric layer and/or overlying photoresist. The etchant gas is fluorine-free and includes a carbon-containing gas such as CO gas, a nitrogen-containing gas such as N2, an optional oxygen-containing gas such as O2, and an optional inert carrier gas such as Ar. The etch rate of the ARC can be at least 10 times higher than that of the underlying layer. Using a combination of CO and O2 with N2 and a carrier gas such as Ar, it is possible to obtain dielectric:ARC selectivity of at least 10. The process is useful for etching contact or via openings in damascene and self-aligned contact or trench structures.