Abstract: A headpiece assembly for use with a night vision mounting arm includes a bump shell and an interior suspension assembly for seating on the head of a human. A mounting bracket is secured to the front of the bump shell for removably attaching the night vision mounting arm to the bump shell. A ballistic shell has a bottom forming an opening and a coupling mechanism for removably securing the ballistic shell to the bump shell when the ballistic shell is placed over the bump shell. The ballistic shell has a front and a notch extending upwardly from the opening into the front for receiving the mounting bracket when the ballistic shell is placed over the bump shell so as to permit the night vision mounting arm to be attached to the bump shell during use of the ballistic shell.

Abstract: A headpiece assembly for use with a night vision mounting arm includes a bump shell and an interior suspension assembly for seating on the head of a human. A mounting bracket is secured to the front of the bump shell for removably attaching the night vision mounting arm to the bump shell. A ballistic shell has a bottom forming an opening and a coupling mechanism for removably securing the ballistic shell to the bump shell when the ballistic shell is placed over the bump shell. The ballistic shell has a front and a notch extending upwardly from the opening into the front for receiving the mounting bracket when the ballistic shell is placed over the bump shell so as to permit the night vision mounting arm to be attached to the bump shell during use of the ballistic shell.

Abstract: The present invention relates to a semiconductor device having an integrated metal shield. The shield, created as part of a MOSFET, is formed about a gate electrode of the MOSFET to effectively reduce drain-to-gate capacitance and increase breakdown voltage. The shield consists of a metallic shield contact via and a source contact extension. The metallic shield contact via, formed between the gate electrode and a drain region of the MOSFET, may be either a series of closely spaced vias or a wide continuous via. The metallic shield contact via is isolated from the surface of a semiconductor wafer by a shield isolation layer at one end. The metallic shield contact via is electrically coupled to the source contact extension at the other end. The source contact extension is metallic, and may be formed from the same metal used to create a source contact and a drain contact for the MOSFET.