Abstract: In an aspect of the disclosure, apparatuses for reducing the cost of using an ECO standard cell library in chip design are provided. Such an apparatus may be a MOS device including several regions. The MOS device may include a pMOS transistor and an nMOS transistor in a first region of the device. The pMOS transistor gate of the pMOS transistor and the nMOS transistor gate of the nMOS transistor may be formed by a gate interconnect extending in a first direction across the device. The MOS device may include several unutilized pMOS transistors and several unutilized nMOS transistors in a second region of the device adjacent to the first region. Fins of the pMOS transistors and the nMOS transistors in the first region may be disconnected from fins of the unutilized pMOS transistors and the unutilized nMOS transistors in the second region.

Abstract: A scan chain circuit is disclosed. The scan chain circuit includes a chain of serially coupled clocked circuits. In a first mode of operation, each of the clocked circuits toggles in response to a rising edge of a clock signal. In a second mode of operation, a first set of the clocked circuits in the chain of serially coupled clocked circuits toggle in response to the rising edge of the clock signal and a second set of the clocked circuits in the chain of serially coupled clocked circuits toggle in response to a falling edge of the clock signal.

Abstract: A scan chain circuit is disclosed. The scan chain circuit includes a chain of serially coupled clocked circuits. In a first mode of operation, each of the clocked circuits toggles in response to a rising edge of a clock signal. In a second mode of operation, a first set of the clocked circuits in the chain of serially coupled clocked circuits toggle in response to the rising edge of the clock signal and a second set of the clocked circuits in the chain of serially coupled clocked circuits toggle in response to a falling edge of the clock signal.