Abstract: An HVAC system and method for characterizing a chosen VAV valve involves measuring the valve's volumetric flow rate versus valve position at just one or at some other limited number of data points and comparing that to the average characteristics a rather large group of similar valves. A custom characterization of airflow versus valve position for the chosen VAV valve is then created based on a difference between the characteristics of the chosen valve and that of the group of valves. In some examples, the VAV valve is of a venturi style such that a generic characterization of the group of valves is substantially linear when their flow rates are expressed logarithmically.

Abstract: A venturi valve having a valve housing that includes a narrowing section extending between a broader upstream end and a narrower valve throat followed by a broadening section downstream of the valve throat, and a valve member configured to be situated in the valve housing and movable along a valve axis in an axial direction of the valve housing. The venturi valve includes a plurality of flow influencing features positioned in a reattachment region of the valve member and/or extending inward from an inner wall of the valve housing. The plurality of flow influencing features are configured to reduce perturbations in an air flow passing through the venturi valve thereby reducing rattle from the venturi valve.

Abstract: A venturi valve having a valve housing that includes a narrowing section extending between a broader upstream end and a narrower valve throat followed by a broadening section downstream of the valve throat, and a valve member configured to be situated in the valve housing and movable along a valve axis in an axial direction of the valve housing. The venturi valve includes a plurality of flow influencing features positioned in a reattachment region of the valve member and/or extending inward from an inner wall of the valve housing. The plurality of flow influencing features are configured to reduce perturbations in an air flow passing through the venturi valve thereby reducing rattle from the venturi valve.

Abstract: A venturi valve having a valve housing that includes a narrowing section extending between a broader upstream end and a narrower valve throat followed by a broadening section downstream of the valve throat, and a valve member configured to be situated in the valve housing and movable along a valve axis in an axial direction of the valve housing. The venturi valve includes a plurality of flow influencing features positioned in a reattachment region of the valve member and/or extending inward from an inner wall of the valve housing. The plurality of flow influencing features are configured to reduce perturbations in an air flow passing through the venturi valve thereby reducing rattle from the venturi valve.

Abstract: An HVAC system and method for characterizing a chosen VAV valve involves measuring the valve's volumetric flow rate versus valve position at just one or at some other limited number of data points and comparing that to the average characteristics a rather large group of similar valves. A custom characterization of airflow versus valve position for the chosen VAV valve is then created based on a difference between the characteristics of the chosen valve and that of the group of valves. In some examples, the VAV valve is of a venturi style such that a generic characterization of the group of valves is substantially linear when their flow rates are expressed logarithmically.

Abstract: The disclosure relates to ferric citrate tablets and dosage forms.

Abstract: The disclosure relates to ferric citrate tablets and dosage forms.

Abstract: A semiconductor package includes an electrically conductive base (base) having a source connector. A drain connector and a gate connector are electrically coupled with the base. A depletion mode gallium nitride field-effect transistor (GaN FET) and an enhancement mode laterally diffused metal-oxide-semiconductor field-effect transistor (LDMOS FET) are also coupled with the base. The gate connector and a gate contact of the LDMOS FET are both included in a first electrical node, the source connector and a source contact of the LDMOS FET are both included in a second electrical node, and the drain connector and a drain contact of the GaN FET are both included in a third electrical node. The GaN FET and LDMOS FET together form a cascode that operates as an enhancement mode amplifier. The semiconductor package does not include an interposer between the GaN FET and the base or between the LDMOS FET and the base.

Abstract: A semiconductor package includes an electrically conductive base (base) having a source connector. A drain connector and a gate connector are electrically coupled with the base. A depletion mode gallium nitride field-effect transistor (GaN FET) and an enhancement mode laterally diffused metal-oxide-semiconductor field-effect transistor (LDMOS FET) are also coupled with the base. The gate connector and a gate contact of the LDMOS FET are both included in a first electrical node, the source connector and a source contact of the LDMOS FET are both included in a second electrical node, and the drain connector and a drain contact of the GaN FET are both included in a third electrical node. The GaN FET and LDMOS FET together form a cascode that operates as an enhancement mode amplifier. The semiconductor package does not include an interposer between the GaN FET and the base or between the LDMOS FET and the base.

Abstract: Disclosed herein are ferric citrate-containing tablets. In various embodiments, the tablets include ferric citrate formulations that meet certain dissolution, tableting and disintegration standards. In various aspects, the tablet formulations can include ferric citrate as the active ingredient and a binder. The formulations also can include a lubricant and/or a disintegrant (which, in some embodiments, can be the same as the binder).

Abstract: A semiconductor package includes an electrically conductive base (base) having a source connector. A drain connector and a gate connector are electrically coupled with the base. A depletion mode gallium nitride field-effect transistor (GaN FET) and an enhancement mode laterally diffused metal-oxide-semiconductor field-effect transistor (LDMOS FET) are also coupled with the base. The gate connector and a gate contact of the LDMOS FET are both included in a first electrical node, the source connector and a source contact of the LDMOS FET are both included in a second electrical node, and the drain connector and a drain contact of the GaN FET are both included in a third electrical node. The GaN FET and LDMOS FET together form a cascode that operates as an enhancement mode amplifier. The semiconductor package does not include an interposer between the GaN FET and the base or between the LDMOS FET and the base.

Abstract: A semiconductor package includes an electrically conductive base (base) having a source connector. A drain connector and a gate connector are electrically coupled with the base. A depletion mode gallium nitride field-effect transistor (GaN FET) and an enhancement mode laterally diffused metal-oxide-semiconductor field-effect transistor (LDMOS FET) are also coupled with the base. The gate connector and a gate contact of the LDMOS FET are both included in a first electrical node, the source connector and a source contact of the LDMOS FET are both included in a second electrical node, and the drain connector and a drain contact of the GaN FET are both included in a third electrical node. The GaN FET and LDMOS FET together form a cascode that operates as an enhancement mode amplifier. The semiconductor package does not include an interposer between the GaN FET and the base or between the LDMOS FET and the base.

Abstract: A semiconductor package includes an electrically conductive base (base) having a source connector. A drain connector and a gate connector are electrically coupled with the base. A depletion mode gallium nitride field-effect transistor (GaN FET) and an enhancement mode laterally diffused metal-oxide-semiconductor field-effect transistor (LDMOS FET) are also coupled with the base. The gate connector and a gate contact of the LDMOS FET are both included in a first electrical node, the source connector and a source contact of the LDMOS FET are both included in a second electrical node, and the drain connector and a drain contact of the GaN FET are both included in a third electrical node. The GaN FET and LDMOS FET together form a cascode that operates as an enhancement mode amplifier. The semiconductor package does not include an interposer between the GaN FET and the base or between the LDMOS FET and the base.

Abstract: Devices and systems which control the flow of fluid through a conduit are described herein. One flow control device that controls the flow of fluid through a conduit, includes a body having an axis and defining a passage that allows fluid to flow from an upstream position to a downstream position, the valve body having a converging portion in the upstream position with an inner surface that curves gradually inward, but having an annular rim formed by a portion that extends outward from the inward curving shape, and a throat between the converging and diverging portions; and, a flow regulator supported within the body for controlling the flow of fluid through the conduit, the flow regulator having an annular seating surface configured to contact the annular rim of the body.

Abstract: A semiconductor package includes an electrically conductive base (base) having a source connector. A drain connector and a gate connector are electrically coupled with the base. A depletion mode gallium nitride field-effect transistor (GaN FET) and an enhancement mode laterally diffused metal-oxide-semiconductor field-effect transistor (LDMOS FET) are also coupled with the base. The gate connector and a gate contact of the LDMOS FET are both included in a first electrical node, the source connector and a source contact of the LDMOS FET are both included in a second electrical node, and the drain connector and a drain contact of the GaN FET are both included in a third electrical node. The GaN FET and LDMOS FET together form a cascode that operates as an enhancement mode amplifier. The semiconductor package does not include an interposer between the GaN FET and the base or between the LDMOS FET and the base.

Abstract: A semiconductor package includes an electrically conductive base (base) having a source connector. A drain connector and a gate connector are electrically coupled with the base. A depletion mode gallium nitride field-effect transistor (GaN FET) and an enhancement mode laterally diffused metal-oxide-semiconductor field-effect transistor (LDMOS FET) are also coupled with the base. The gate connector and a gate contact of the LDMOS FET are both included in a first electrical node, the source connector and a source contact of the LDMOS FET are both included in a second electrical node, and the drain connector and a drain contact of the GaN FET are both included in a third electrical node. The GaN FET and LDMOS FET together form a cascode that operates as an enhancement mode amplifier. The semiconductor package does not include an interposer between the GaN FET and the base or between the LDMOS FET and the base.

Abstract: The disclosre relates to ferric citrate tablets and dosage forms.

Abstract: Disclosed herein are ferric citrate-containing tablets. In various embodiments, the tablets include ferric citrate formulations that meet certain dissolution, tableting and disintegration standards. In various aspects, the tablet formulations can include ferric citrate as the active ingredient and a binder. The formulations also can include a lubricant and/or a disintegrant (which, in some embodiments, can be the same as the binder).

Abstract: Devices and systems for controls the flow of fluid through a conduit are described herein. One flow control device that controls the flow of fluid through a conduit, includes a body having an axis and defining a passage that allows fluid to flow from an upstream position to a downstream position, the valve body having a converging portion in the upstream position with an inner surface that curves gradually inward, but having an annular rim formed by a portion that extends outward from the inward curving shape, and a throat between the converging and diverging portions; and, a flow regulator supported within the body for controlling the flow of fluid through the conduit, the flow regulator having an annular seating surface configured to contact the annular rim of the body.