Abstract: A method for fabricating microchip devices is provided. The method includes the steps of providing a first planar substrate, locating at least one first alignment feature in the surface of the first planar substrate, and bonding a second substrate to the surface of the first planar substrate. The method further includes the step of aligning subsequent process operations performed on at least one of the first and second substrates to visible alignment features of the first substrate, wherein the visible alignment features are at least one of the first alignment feature and a visible feature that corresponds to the location of the first alignment feature.

Abstract: A method of processing a wafer, and particularly a cap wafer configured for mating with a device wafer in the production of a die package. Masking layers are deposited on oxide layers present on opposite surfaces of the wafer, after which the masking layers are etched to expose regions of the underlying oxide layers. Thereafter, an oxide mask is formed on the exposed regions of the oxide layers, but is prevented from forming on other regions of the oxide layers masked by the masking layers. The masking layers are then removed and the underlying regions of the oxide layers and the wafer are etched to simultaneously produce through-holes and recesses in the wafer. The oxide mask is then removed to allow mating of the cap wafer with a device wafer.

Abstract: A process for forming a microelectromechanical system (MEMS) device by a deep reactive ion etching (DRIE) process during which a substrate overlying a cavity is etched to form trenches that breach the cavity to delineate suspended structures. In order to eliminate or at least reduce heat and/or charge accumulation that accelerates the DRIE etch rate of certain suspended structures, means are provided to electrically and/or thermally tie the suspended structures to each other and/or the surrounding bulk substrate. As a result, the process window is increased to allow slower-etching structures to be etched to completion without overetching the more rapidly-etched structures.

Abstract: A process for forming a microelectromechanical system (MEMS) device by a deep reactive ion etching (DRIE) process during which a substrate overlying a cavity is etched to form trenches that breach the cavity to delineate suspended structures. In order to eliminate or at least reduce heat and/or charge accumulation that accelerates the DRIE etch rate of certain suspended structures, means are provided to electrically and/or thermally tie the suspended structures to each other and/or the surrounding bulk substrate. As a result, the process window is increased to allow slower-etching structures to be etched to completion without overetching the more rapidly-etched structures.