Abstract: A sensing device is formed on a first side of a wafer device, forming a cavity between sensing device and the wafer device. An opening of the cavity faces away from the sensing device, positioned on a second side of the wafer device (positioned opposite to the first side). A hydrophobic layer is formed on the second side of the wafer device, on the cavity, on an interior and on an exterior of the sensing device. A mask is formed on the hydrophobic layer on the second side. The mask is perforated that maintains at least a portion of the hydrophobic layer covering the second side of the wafer device exposed. Light is applied to the second side of the wafer device that removes the at least the portion of the hydrophobic layer covering the second side of the wafer device that is exposed. The mask is removed.

Abstract: Low-cost, robust, and high performance microelectromechanical systems (MEMS) acoustic sensors are described. Described MEMS acoustic sensors can comprise a set of etch release structures in the acoustic sensor membrane that facilitates rapid and/or uniform etch release of the acoustic sensor membrane. In addition, MEMS acoustic sensors can comprise a set of membrane position control structures of the acoustic sensor membrane that can reduce the bending stress of the acoustic sensor membrane. MEMS acoustic sensors can further comprise a three layer acoustic sensor membrane that provides increased robustness. Further design flexibility and improvements are described that provide increased robustness and/or cost savings, and a low cost fabrication process for MEMS acoustic sensors is provided.

Abstract: Low-cost, robust, and high performance microelectromechanical systems (MEMS) acoustic sensors are described. Described MEMS acoustic sensors can comprise a set of etch release structures in the acoustic sensor membrane that facilitates rapid and/or uniform etch release of the acoustic sensor membrane. In addition, MEMS acoustic sensors can comprise a set of membrane position control structures of the acoustic sensor membrane that can reduce the bending stress of the acoustic sensor membrane. MEMS acoustic sensors can further comprise a three layer acoustic sensor membrane that provides increased robustness. Further design flexibility and improvements are described that provide increased robustness and/or cost savings, and a low cost fabrication process for MEMS acoustic sensors is provided.

Abstract: A connector insert arrangement, an active optical cable and methods are described. The connector insert is receivable in a connector housing for removable engagement with a complementary connector. Dielectric inserts each support one or more electrical contacts for access by the complementary connector and each electrical contact is selected as one of a contact pad and a spring probe pin for electrical contact with a complementary spring probe pin and complementary contact pad, respectively, in the complementary connector. A ground body supports the dielectric inserts to maintain a characteristic transmission line impedance along each of a plurality of high speed data paths such that each high speed data path serves as an independent transmission line structure that provides a data transfer rate of at least 1 gigabit per second. An active optical cable is described that can be hermaphroditic.

Abstract: A connector insert arrangement, an active optical cable and methods are described. The connector insert is receivable in a connector housing for removable engagement with a complementary connector. Dielectric inserts each support one or more electrical contacts for access by the complementary connector and each electrical contact is selected as one of a contact pad and a spring probe pin for electrical contact with a complementary spring probe pin and complementary contact pad, respectively, in the complementary connector. A ground body supports the dielectric inserts to maintain a characteristic transmission line impedance along each of a plurality of high speed data paths such that each high speed data path serves as an independent transmission line structure that provides a data transfer rate of at least 1 gigabit per second. An active optical cable is described that can be hermaphroditic.

Abstract: A method for fabricating microchip devices is provided. The method includes the steps of providing a first planar substrate, locating at least one first alignment feature in the surface of the first planar substrate, and bonding a second substrate to the surface of the first planar substrate. The method further includes the step of aligning subsequent process operations performed on at least one of the first and second substrates to visible alignment features of the first substrate, wherein the visible alignment features are at least one of the first alignment feature and a visible feature that corresponds to the location of the first alignment feature.

Abstract: A method of processing a wafer, and particularly a cap wafer configured for mating with a device wafer in the production of a die package. Masking layers are deposited on oxide layers present on opposite surfaces of the wafer, after which the masking layers are etched to expose regions of the underlying oxide layers. Thereafter, an oxide mask is formed on the exposed regions of the oxide layers, but is prevented from forming on other regions of the oxide layers masked by the masking layers. The masking layers are then removed and the underlying regions of the oxide layers and the wafer are etched to simultaneously produce through-holes and recesses in the wafer. The oxide mask is then removed to allow mating of the cap wafer with a device wafer.

Abstract: A method of processing a wafer, and particularly a cap wafer configured for mating with a device wafer in the production of a die package. Masking layers are deposited on oxide layers present on opposite surfaces of the wafer, after which the masking layers are etched to expose regions of the underlying oxide layers. Thereafter, an oxide mask is formed on the exposed regions of the oxide layers, but is prevented from forming on other regions of the oxide layers masked by the masking layers. The masking layers are then removed and the underlying regions of the oxide layers and the wafer are etched to simultaneously produce through-holes and recesses in the wafer. The oxide mask is then removed to allow mating of the cap wafer with a device wafer.

Abstract: A process for forming a microelectromechanical system (MEMS) device by a deep reactive ion etching (DRIE) process during which a substrate overlying a cavity is etched to form trenches that breach the cavity to delineate suspended structures. In order to eliminate or at least reduce heat and/or charge accumulation that accelerates the DRIE etch rate of certain suspended structures, means are provided to electrically and/or thermally tie the suspended structures to each other and/or the surrounding bulk substrate. As a result, the process window is increased to allow slower-etching structures to be etched to completion without overetching the more rapidly-etched structures.

Abstract: A process for forming a microelectromechanical system (MEMS) device by a deep reactive ion etching (DRIE) process during which a substrate overlying a cavity is etched to form trenches that breach the cavity to delineate suspended structures. In order to eliminate or at least reduce heat and/or charge accumulation that accelerates the DRIE etch rate of certain suspended structures, means are provided to electrically and/or thermally tie the suspended structures to each other and/or the surrounding bulk substrate. As a result, the process window is increased to allow slower-etching structures to be etched to completion without overetching the more rapidly-etched structures.