Abstract: A respirator includes a mask having a body extending between a front edge and a rear edge, and a face seal extending inward from the body. The face seal has a first wall extending from the body and a second wall intersecting with the first wall at a sealing land. The sealing land is configured to contact a user's face to form a continuous circumferential seal. The face seal is folded over such that the first wall and the second wall both extend away from the sealing land in a common direction. Optionally, the face seal may be U-shaped.

Abstract: According to the invention, a safety device suitable (S) for a pre-filled syringe containing a medicament comprises a chassis adapted to be affixed to the pre-filled syringe, a deformable flexible outer structure made from a material with a shape memory and a substantially cylindrical needle shield affixed or integral to the outer structure. The deformed flexible outer structure is capable of advancing the needle shield with respect to the chassis in a distal direction (D) into a position in which the needle shield projects from the chassis in the distal direction (D). A biasing force for advancing the needle shield originates from a shape memory effect that causes the deformed flexible outer structure to substantially return to its unstressed shape.

Abstract: An injection device for administering a liquid is presented that comprises a pre-filled syringe and a safety mechanism for providing needle safety for an injection needle of the pre-filled syringe. The pre-filled syringe comprises a barrel containing the liquid and a stopper translatably disposed within the barrel, where the injection needle attached to a distal end of the barrel.

Abstract: According to the invention, a safety device for a pre-filled syringe comprises a hollow support body to retain the pre-filled syringe therein, a hollow needle shield that is slidable relative to the support body and guiding means for guiding the movement of the needle shield relative to the support body. The guiding means comprise a guide pin, a guide track and a cut-out adjacent to the guide track. The guide pin protrudes into the guide track and moves within and along the guide track when the needle shield is slid relative to the support body. The cut-out allows a side wall of the guide track to be deflected in a lateral direction perpendicular to a central axis of the safety device.

Abstract: A respirator includes a mask having a body extending between a front edge and a rear edge, and a face seal extending inward from the body. The face seal has a first wall extending from the body and a second wall intersecting with the first wall at a sealing land. The sealing land is configured to contact a user's face to form a continuous circumferential seal. The face seal is folded over such that the first wall and the second wall both extend away from the sealing land in a common direction. Optionally, the face seal may be U-shaped.

Abstract: A control unit for a medical device wherein the control unit comprises a pump, a conduit and control means for controlling the flow of fluid from the pump through the conduit; and wherein the conduit is a rigid internal passage located in the control unit.

Abstract: A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.

Abstract: A method for enhancing growth of device-quality planar semipolar nitride semiconductor thin films via metalorganic chemical vapor deposition (MOCVD) by using an (Al,In,Ga)N nucleation layer containing at least some indium. Specifically, the method comprises loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1?xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1?xN nucleation layer, and cooling the substrate under a nitrogen overpressure.

Abstract: A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface.

Abstract: A method for growth and fabrication of semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga, Al, In, B)N template or nucleation layer on the substrate, and growing the semipolar (Ga, Al, In, B)N thin films, heterostructures or devices on the planar semipolar (Ga, Al, In, B)N template or nucleation layer. The method results in a large area of the semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices being parallel to the substrate surface.

Abstract: A lateral growth method for defect reduction of semipolar nitride films. The process steps include selecting a semipolar nitride plane and composition, selecting a suitable substrate for growth of the semipolar nitride plane and composition, and applying a selective growth process in which the semipolar nitride nucleates on some areas of the substrate at the exclusion of other areas of the substrate, wherein the selective growth process includes lateral growth of nitride material by a lateral epitaxial overgrowth (LEO), sidewall lateral epitaxial overgrowth (SLEO), cantilever epitaxy or nanomasking.

Abstract: An etching technique for the fabrication of thin (Al, In, Ga)N layers. A suitable template or substrate is selected and implanted with foreign ions over a desired area to create ion implanted material. A regrowth of a device structure is then performed on the implanted template or substrate. The top growth surface of the template is bonded to a carrier wafer to created a bonded template/carrier wafer structure. The substrate is removed, as is any residual material, to expose the ion implanted material. The ion implanted material on the bonded template/carrier wafer structure is then exposed to a suitable etchant for a sufficient time to remove the ion implanted material.

Abstract: A method of fabricating free-standing (Al, In, Ga)N substrates, by in situ separation of thick epitaxially grown nitride films from their foreign substrates. A suitable substrate for (Al, In, Ga)N film growth is selected, and foreign ions are implanted in the substrate to form a comparatively sharp concentration profile. An (Al, In Ga)N film is deposited on the substrate, and the deposited film is cooled to introduce thermal expansion mismatch-related strain, so that the film spontaneously separates from the substrate.

Abstract: A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface.