Abstract: A metrology device that can determine at least one characteristics of a sample is disclosed. The metrology device includes an optical system that uses spatially coherent light with a first and a second objective lens as well as a detector that detects light reflected from the sample. The objective lenses use numerical apertures sufficient to produce a small probe size, e.g., less than 200 ?m, while a spatial filter is used to reduce the effective numerical aperture of the optical system as seen by the detector to avoid loss of information and demanding computation requirements caused by the large angular spread due to large numerical apertures. The spatial filter permits light to pass in a desired range of angles, while blocking the remaining light and is positioned to prevent use of the full spatial extent of at least one of the first objective lens and the second objective lens.

Abstract: An optical metrology device produces beams of light with varying wavelengths in a spectral range for measurement of a sample that is at least partially transparent to the spectral range. The light is obliquely incident on the sample, where a portion of the light is reflected off the top surface and a portion is transmitted through the sample and is reflected off the bottom surface. The incident light and/or reflected light is polarized and a phase modulator, such as a photoelastic modulator or electrooptic modulator, is adjusted based on the wavelengths in each beam of light to produce a same retardation of polarization for each beam of light. The reflected light that is received by a detector does not include light reflected from the bottom surface of the sample. A characteristic of a buried structure below the top surface of the sample is determined using the detected reflected light.

Abstract: A metrology device that can determine at least one characteristics of a sample is disclosed. The metrology device includes an optical system that uses spatially coherent light with a first and a second objective lens as well as a detector that detects light reflected from the sample. The objective lenses use numerical apertures sufficient to produce a small probe size, e.g., less than 200 ?m, while a spatial filter is used to reduce the effective numerical aperture of the optical system as seen by the detector to avoid loss of information and demanding computation requirements caused by the large angular spread due to large numerical apertures. The spatial filter permits light to pass in a desired range of angles, while blocking the remaining light and is positioned to prevent use of the full spatial extent of at least one of the first objective lens and the second objective lens.

Abstract: An optical metrology device produces light in a spectral range for measurement of a sample using a tunable Quantum Cascade Laser (QCL). The optical metrology device includes a second channel that is used to diagnose when the tunable QCL is in failure mode, e.g., when it is not producing all wavelengths in the plurality of different wavelength ranges. The second channel includes at least one optical flat that is transmissive to the light produced by the QCL and is separate from the tunable QCL. The optical flat is switchably placed in a beam path of the light produced by the tunable QCL and light transmitted through the optical flat is received by a detector. Using output signals from the detector, a failure mode of the tunable QCL may be determined.

Abstract: Apparatuses and methods for cleaning a semiconductor processing chamber is provided. The semiconductor processing chamber may include a UV radiation source, a substrate holder, and a UV transmissive window. The UV transmissive window may include one or multiple panes. One or more panes of the UV transmissive window may be non-reactive with fluorine containing chemistries. In multi-pane windows a purge gas flow path may be formed in the gap between windows. A purge gas may be flowed through the purge gas flow path to prevent process gases used in the chamber interior from reaching one or more panes of the UV transmissive window.

Abstract: Apparatuses and methods for cleaning a semiconductor processing chamber is provided. The semiconductor processing chamber may include a UV radiation source, a substrate holder, and a UV transmissive window. The UV transmissive window may include one or multiple panes. One or more panes of the UV transmissive window may be non-reactive with fluorine containing chemistries. In multi-pane windows a purge gas flow path may be formed in the gap between windows. A purge gas may be flowed through the purge gas flow path to prevent process gases used in the chamber interior from reaching one or more panes of the UV transmissive window.

Abstract: Methods and apparatus for fabricating a porous, low-k dielectric film are described. In some implementations, the methods include exposing a precursor film including a porogen within a matrix to a plasma generated from a weak oxidizer. The plasma may also include reducing agent species. In some implementations, the plasma is a downstream plasma. Implementations of the method involve selectively removing regions of isolated, organic porogen co-existing within a silicon-organic matrix by exposure to the plasma while preserving the organic groups bonded to the backbone of the silicon matrix. The methods also result in low damage to the dielectric film. In some implementations, plasma exposure is followed by exposure to ultraviolet (UV) radiation.