Abstract: A compound represented by one of the formulae: BaaMobOc??(1), MOdPeOf??(2) or BagMohPiOj??(3) wherein for formula (1) the ratio of a:b is greater than 1:1, wherein for formula (2) the ratio of d:e is from 1:100 to 0.45:1 or from 0.55:1 to 100:1, wherein for formula (3) the ratio of g:h is from 1:7 to 1:2 and the ratio of g:i is from 1:3 to 1:1, or the ratio of g:h is from 0.6:1 to 100:1 and the ratio of g:i is from 2.2:1 to 100:1, and wherein the molybdenum present within the compound is in the 4+ oxidation state.

Abstract: A compound represented by one of the formulae: BaaMobOc??(1), MOdPeOf??(2) or BagMohPiOj??(3) wherein for formula (1) the ratio of a:b is from 1:100 to 100:1, wherein for formula (2) the ratio of d:e is from 1:100 to less than 1:1 or from greater than 1:1 to 100:1, wherein for formula (3) the ratio of g:h is from 1:100 to less than 1.5:1, wherein for formula (3) the ratio of g:i is from 1:100 to 100:1, wherein for formula (3) the ratio of h:i is from 1:100 to less than 1:2, or from greater than 1:2 to less than 2:1, or from greater than 2:1 to 100:1, and wherein the molybdenum present within the compound is in the 5+ oxidation state.

Abstract: Solid state storage devices and methods for populating a hot memory block look-up table (HBLT) are disclosed. In one such method, an indication to an accessed page table or memory map of a non-volatile memory block is stored in the HBLT. If the page table or memory map is already present in the HBLT, the priority location of the page table or memory map is increased to the next priority location. If the page table or memory map is not already stored in the HBLT, the page table or memory map is stored in the HBLT at some priority location, such as the mid-point, and the priority location is incremented with each subsequent access to that page table or memory map.

Abstract: A solid state device has a controller.

Abstract: A solid state device has a controller. The controller is configured to perform a first division operation that divides a received logical block address that indicates a physical memory block in a memory device of a plurality of memory devices in the solid state device by a number of logical block addresses per page of the physical memory block to obtain a result of the first division operation, configured to perform a second division operation that divides the obtained result of the first division operation by a number of memory devices in the plurality of memory devices, and configured to determine a location of the memory device of the plurality of memory devices within the solid state device from a location in a memory device table, the location in the memory device table identified by a remainder of the second division operation.

Abstract: Methods for data recovery and memory systems are provided. According to at least one such method, when defective data is read from a memory location, the data is recovered by an XOR operation on the remaining good data and associated RAID data to reconstruct the defective data. The defective data is excluded from the XOR operation.

Abstract: Solid state storage devices and methods for flash translation layers are disclosed. In one such translation layer, a sector indication is translated to a memory location by a parallel unit look-up table is populated by memory device enumeration at initialization. Each table entry is comprised of communication channel, chip enable, logical unit, and plane for each operating memory device found. When the sector indication is received, a modulo function operates on entries of the look-up table in order to determine the memory location associated with the sector indication.

Abstract: Solid state storage devices and methods for flash translation layers are disclosed. In one such translation layer, a sector indication is translated to a memory location by a parallel unit look-up table is populated by memory device enumeration at initialization. Each table entry is comprised of communication channel, chip enable, logical unit, and plane for each operating memory device found. When the sector indication is received, a modulo function operates on entries of the look-up table in order to determine the memory location associated with the sector indication.

Abstract: Solid state storage devices and methods for flash translation layers are disclosed. In one such translation layer, a sector indication is translated to a memory location by a parallel unit look-up table is populated by memory device enumeration at initialization. Each table entry is comprised of communication channel, chip enable, logical unit, and plane for each operating memory device found. When the sector indication is received, a modulo function operates on entries of the look-up table in order to determine the memory location associated with the sector indication.

Abstract: Solid state storage devices and methods for flash translation layers are disclosed. In one such translation layer, a sector indication is translated to a memory location by a parallel unit look-up table is populated by memory device enumeration at initialization. Each table entry is comprised of communication channel, chip enable, logical unit, and plane for each operating memory device found. When the sector indication is received, a modulo function operates on entries of the look-up table in order to determine the memory location associated with the sector indication.

Abstract: Methods for data recovery and memory systems are provided. According to at least one such method, when defective data is read from a memory location, the data is recovered by an XOR operation on the remaining good data and associated RAID data to reconstruct the defective data. The defective data is excluded from the XOR operation.

Abstract: Solid state storage devices and methods for flash translation layers are disclosed. In one such translation layer, a sector indication is translated to a memory location by a parallel unit look-up table is populated by memory device enumeration at initialization. Each table entry is comprised of communication channel, chip enable, logical unit, and plane for each operating memory device found. When the sector indication is received, a modulo function operates on entries of the look-up table in order to determine the memory location associated with the sector indication.

Abstract: Solid state storage devices and methods for populating a hot memory block look-up table (HBLT) are disclosed. In one such method, an indication to an accessed page table or memory map of a non-volatile memory block is stored in the HBLT. If the page table or memory map is already present in the HBLT, the priority location of the page table or memory map is increased to the next priority location. If the page table or memory map is not already stored in the HBLT, the page table or memory map is stored in the HBLT at some priority location, such as the mid-point, and the priority location is incremented with each subsequent access to that page table or memory map.

Abstract: Methods for data recovery and memory systems are provided. According to at least one such method, when defective data is read from a memory location, the data is recovered by an XOR operation on the remaining good data and associated RAID data to reconstruct the defective data. The defective data is excluded from the XOR operation.

Abstract: Solid state storage devices and methods for populating a hot memory block look-up table (HBLT) are disclosed. In one such method, an indication to an accessed page table or memory map of a non-volatile memory block is stored in the HBLT. If the page table or memory map is already present in the HBLT, the priority location of the page table or memory map is increased to the next priority location. If the page table or memory map is not already stored in the HBLT, the page table or memory map is stored in the HBLT at some priority location, such as the mid-point, and the priority location is incremented with each subsequent access to that page table or memory map.

Abstract: A method for coating a substrate with a coating having a controlled morphology is disclosed, the method comprising providing a substrate, depositing a nucleating layer on a surface of the substrate using an aerosol assisted deposition method and depositing at least one further layer by chemical vapour deposition. The nucleating layer and further layer preferably comprise tin oxide. The substrate is preferably glass. The method results in high transmittance and a low diffuse transmission across the visible and infrared region.

Abstract: The present disclosure includes methods and devices for operating a solid state drive. One method embodiment includes mirroring programming operations such that data associated with a programming operation is programmed to two or more locations in memory of the solid state drive. The method also includes ceasing to mirror programming operations upon an occurrence of a particular event.

Abstract: The present disclosure includes methods and devices for operating a solid state drive. One method embodiment includes mirroring programming operations such that data associated with a programming operation is programmed to two or more locations in memory of the solid state drive. The method also includes ceasing to mirror programming operations upon an occurrence of a particular event.

Abstract: Methods for data recovery and memory systems are provided. According to at least one such method, when defective data is read from a memory location, the data is recovered by an XOR operation on the remaining good data and associated RAID data to reconstruct the defective data. The defective data is excluded from the XOR operation.

Abstract: Methods for coating a substrate are disclosed, the methods comprising providing a substrate, providing pre-formed nanoparticles of an inorganic material, providing at least one precursor of a first metal oxide, and depositing a coating on at least one surface of the substrate by contacting the surface with the precursor of the metal oxide and pre-formed nanoparticles. Also disclosed are substrates coated using such a method. The coated substrates are coloured. Preferably the metal oxide is a doped metal oxide to modify the thermal properties of the coating. The preferred nanoparticles are of platinum group metals or coinage metals.