Patents by Inventor Troy S. Detrick
Troy S. Detrick has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8878926Abstract: Embodiments of the present invention provide methods and apparatus for analyzing thermal properties of bonding materials within a composite structure. One embodiment of the present invention provides an apparatus for analyzing thermal property of a bonding material within a structure. The apparatus comprises a structure support having a supporting surface configured to support the structure, a heat source configured to direct a heat flux to the structure supported by the supporting surface of the structure support, and a camera facing the structure supported on the structure support and configured to capture thermal images of the structure supported on the structure support.Type: GrantFiled: September 19, 2011Date of Patent: November 4, 2014Assignee: Applied Materials, Inc.Inventors: Zheng John Ye, Kartik Ramaswamy, Troy S. Detrick, Kenneth S. Collins
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Publication number: 20120069174Abstract: Embodiments of the present invention provide methods and apparatus for analyzing thermal properties of bonding materials within a composite structure. One embodiment of the present invention provides an apparatus for analyzing thermal property of a bonding material within a structure. The apparatus comprises a structure support having a supporting surface configured to support the structure, a heat source configured to direct a heat flux to the structure supported by the supporting surface of the structure support, and a camera facing the structure supported on the structure support and configured to capture thermal images of the structure supported on the structure support.Type: ApplicationFiled: September 19, 2011Publication date: March 22, 2012Applicant: APPLIED MATERIALS, INC.Inventors: Zheng John Ye, Kartik Ramaswamy, Troy S. Detrick, Kenneth S. Collins
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Patent number: 8080479Abstract: A method of processing a workpiece in a plasma reactor chamber includes coupling RF power via an electrode to plasma in the chamber, the RF power being of a variable frequency in a frequency range that includes a fundamental frequency f. The method also includes coupling the electrode to a resonator having a resonant VHF frequency F which is a harmonic of the fundamental frequency f, so as to produce VHF power at the harmonic. The method controls the ratio of power near the fundamental f to power at harmonic F, by controlling the proportion of power from the generator that is up-converted from f to F, so as to control plasma ion density distribution.Type: GrantFiled: April 11, 2007Date of Patent: December 20, 2011Assignee: Applied Materials, Inc.Inventors: Kenneth S. Collins, Hiroji Hanawa, Kartik Ramaswamy, Douglas A. Buchberger, Jr., Shahid Rauf, Kallol Bera, Lawrence Wong, Walter R. Merry, Matthew L. Miller, Steven C. Shannon, Andrew Nguyen, James P. Cruse, James Carducci, Troy S. Detrick, Subhash Deshmukh, Jennifer Y. Sun
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Patent number: 8076247Abstract: A method is provided for processing a workpiece in a plasma reactor chamber. The method includes coupling, to a plasma in the chamber, power of an RF frequency via a ceiling electrode and coupling, to the plasma, power of at least approximately the same RF frequency via a workpiece support electrode. The method also includes providing an edge ground return path. The method further includes adjusting the proportion between (a) current flow between said electrodes and (b) current flow to the edge ground return path from said electrodes, to control plasma ion density distribution uniformity over the workpiece.Type: GrantFiled: April 11, 2007Date of Patent: December 13, 2011Assignee: Applied Materials, Inc.Inventors: Kenneth S. Collins, Hiroji Hanawa, Kartik Ramaswamy, Douglas A. Buchberger, Jr., Shahid Rauf, Kallol Bera, Lawrence Wong, Walter R. Merry, Matthew L. Miller, Steven C. Shannon, Andrew Nguyen, James P. Cruse, James Carducci, Troy S. Detrick, Subhash Deshmukh, Jennifer Y. Sun
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Patent number: 7988815Abstract: RF ground return current flow is diverted away from asymmetrical features of the reactor chamber by providing bypass current flow paths. One bypass current flow path avoids the pumping port in the chamber floor, and comprises a conductive symmetrical grill extending from the side wall to the grounded pedestal base. Another bypass current flow path avoids the wafer slit valve, and comprises an array of conductive straps bridging the section of the sidewall occupied by the slit valve.Type: GrantFiled: July 26, 2007Date of Patent: August 2, 2011Assignee: Applied Materials, Inc.Inventors: Shahid Rauf, Kenneth S. Collins, Kallol Bera, Kartik Ramaswamy, Hiroji Hanawa, Andrew Nguyen, Steven C. Shannon, Lawrence Wong, Satoru Kobayashi, Troy S. Detrick, James P. Cruse
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Patent number: 7968469Abstract: A method for processing a workpiece in a plasma reactor chamber includes coupling RF power at a first VHF frequency f1 to a plasma via one of the electrodes of the chamber, and providing a center ground return path for RF current passing directly between the ceiling electrode and the workpiece support electrode for the frequency f1. The method further includes providing a variable height edge ground annular element and providing a ground return path through the edge ground annular element for the frequency f1. The method controls the uniformity of plasma ion density distribution by controlling the distance between the variable height edge ground annular element and one of: (a) height of ceiling electrode or (b) height of workpiece support electrode.Type: GrantFiled: April 11, 2007Date of Patent: June 28, 2011Assignee: Applied Materials, Inc.Inventors: Kenneth S. Collins, Hiroji Hanawa, Kartik Ramaswamy, Douglas A. Buchberger, Jr., Shahid Rauf, Kallol Bera, Lawrence Wong, Walter R. Merry, Matthew L. Miller, Steven C. Shannon, Andrew Nguyen, James P. Cruse, James Carducci, Troy S. Detrick, Subhash Deshmukh, Jennifer Y. Sun
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Patent number: 7884025Abstract: In a plasma reactor chamber a ceiling electrode and a workpiece support electrode, respective RF power sources of respective VHF frequencies f1 and f2 are coupled to either respective ones of the electrodes or to a common one of the electrodes, where f1 is sufficiently high to produce a center-high non-uniform plasma ion distribution and f2 is sufficiently low to produce a center-low non-uniform plasma ion distribution. Respective center ground return paths are provided for RF current passing directly between the ceiling electrode and the workpiece support electrode for the frequencies f1 and f2, and an edge ground return path is provided for each of the frequencies f1 and f2. The impedance of at least one of the ground return paths is adjusted so as to control the uniformity of the plasma ion density distribution.Type: GrantFiled: April 11, 2007Date of Patent: February 8, 2011Assignee: Applied Materials, Inc.Inventors: Kenneth S. Collins, Hiroji Hanawa, Kartik Ramaswamy, Douglas A. Buchberger, Jr., Shahid Rauf, Kallol Bera, Lawrence Wong, Walter R. Merry, Matthew L. Miller, Steven C. Shannon, Andrew Nguyen, James P. Cruse, James Carducci, Troy S. Detrick, Subhash Deshmukh, Jennifer Y. Sun
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Patent number: 7879731Abstract: A method is provided for processing a workpiece in a plasma reactor chamber having electrodes including at least a ceiling electrode and a workpiece support electrode. The method includes coupling respective RF power sources of respective VHF frequencies f1 and f2 to either (a) respective ones of the electrodes or (b) a common one of the electrodes, where f1 is sufficiently high to produce a center-high non-uniform plasma ion distribution and f2 is sufficiently low to produce a center-low non-uniform plasma ion distribution. The method further includes adjusting a ratio of an RF parameter at the f1 frequency to the RF parameter at the f2 frequency so as to control plasma ion density distribution, the RF parameter being any one of RF power, RF voltage or RF current.Type: GrantFiled: April 11, 2007Date of Patent: February 1, 2011Assignee: Applied Materials, Inc.Inventors: Kenneth S. Collins, Hiroji Hanawa, Kartik Ramaswamy, Douglas A. Buchberger, Jr., Shahid Rauf, Kallol Bera, Lawrence Wong, Walter R. Merry, Matthew L. Miller, Steven C. Shannon, Andrew Nguyen, James P. Cruse, James Carducci, Troy S. Detrick, Subhash Deshmukh, Jennifer Y. Sun
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Patent number: 7838430Abstract: A method and apparatus for controlling characteristics of a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method comprises supplying a first RF signal to a first electrode disposed in a processing chamber, and supplying a second RF signal to the first electrode, wherein an interaction between the first and second RF signals is used to control at least one characteristic of a plasma formed in the processing chamber.Type: GrantFiled: April 12, 2004Date of Patent: November 23, 2010Assignee: Applied Materials, Inc.Inventors: Steven C. Shannon, Dennis S. Grimard, Theodoros Panagopoulos, Daniel J. Hoffman, Michael G. Chafin, Troy S. Detrick, Alexander Paterson, Jingbao Liu, Taeho Shin, Bryan Y. Pu
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Publication number: 20090025879Abstract: RF ground return current flow is diverted away from asymmetrical features of the reactor chamber by providing a bypass current flow path. The bypass current flow path avoids the pumping port in the chamber floor and avoids the wafer slit valve, and is provided by a conductive annular baffle grounded to and extending from the wafer pedestal. Current flow below the level of the annular baffle can be blocked by providing one or more insulating rings in the sidewall or by providing a dielectric sidewall.Type: ApplicationFiled: July 26, 2007Publication date: January 29, 2009Inventors: Shahid Rauf, Kenneth S. Collins, Kallol Bera, Kartik Ramaswamy, Andrew Nguyen, Steven C. Shannon, Lawrence Wong, Satoru Kobayashi, Troy S. Detrick, James P. Cruse
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Publication number: 20090025878Abstract: RF ground return current flow is diverted away from asymmetrical features of the reactor chamber by providing bypass current flow paths. One bypass current flow path avoids the pumping port in the chamber floor, and comprises a conductive symmetrical grill extending from the side wall to the grounded pedestal base. Another bypass current flow path avoids the wafer slit valve, and comprises an array of conductive straps bridging the section of the sidewall occupied by the slit valve.Type: ApplicationFiled: July 26, 2007Publication date: January 29, 2009Inventors: Shahid Rauf, Kenneth S. Collins, Kallol Bera, Kartik Ramaswamy, Andrew Nguyen, Steven C. Shannon, Lawrence Wong, Satoru Kobayashi, Troy S. Detrick, James P. Cruse
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Publication number: 20080179181Abstract: A method for processing a workpiece in a plasma reactor chamber includes coupling RF power at a first VHF frequency f1 to a plasma via one of the electrodes of the chamber, and providing a center ground return path for RF current passing directly between the ceiling electrode and the workpiece support electrode for the frequency f1. The method further includes providing a variable height edge ground annular element and providing a ground return path through the edge ground annular element for the frequency f1. The method controls the uniformity of plasma ion density distribution by controlling the distance between the variable height edge ground annular element and one of: (a) height of ceiling electrode or (b) height of workpiece support electrode.Type: ApplicationFiled: April 11, 2007Publication date: July 31, 2008Inventors: KENNETH S. COLLINS, Hiroji Hanawa, Kartik Ramaswamy, Douglas A. Buchberger, Shahid Rauf, Kallol Bera, Lawrence Wong, Walter R. Merry, Matthew L. Miller, Steven C. Shannon, Andrew Nguyen, James P. Cruse, James Carducci, Troy S. Detrick, Subhash Deshmukh, Jennifer Y. Sun
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Publication number: 20080182416Abstract: A method is provided for processing a workpiece in a plasma reactor chamber having electrodes including at least a ceiling electrode and a workpiece support electrode. The method includes coupling respective RF power sources of respective VHF frequencies f1 and f2 to either (a) respective ones of the electrodes or (b) a common one of the electrodes, where f1 is sufficiently high to produce a center-high non-uniform plasma ion distribution and f2 is sufficiently low to produce a center-low non-uniform plasma ion distribution. The method further includes adjusting a ratio of an RF parameter at the f1 frequency to the RF parameter at the f2 frequency so as to control plasma ion density distribution, the RF parameter being any one of RF power, RF voltage or RF current.Type: ApplicationFiled: April 11, 2007Publication date: July 31, 2008Inventors: Kenneth S. Collins, Hiroji Hanawa, Kartik Ramaswamy, Douglas A. Buchberger, Shahid Rauf, Kallol Bera, Lawrence Wong, Walter R. Merry, Matthew L. Miller, Steven C. Shannon, Andrew Nguyen, James P. Cruse, James Carducci, Troy S. Detrick, Subhash Deshmukh, Jennifer Y. Sun
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Publication number: 20080179011Abstract: A plasma reactor includes an electrostatic chuck in the chamber for supporting the workpiece, a ceiling electrode facing the electrostatic chuck and an ESC electrode in the electrostatic chuck with an electrostatic clamping voltage supply coupled to the ESC electrode. The reactor further includes at least a first RF bias source of an LF or HF frequency coupled to the pedestal electrode, and first and second VHF power sources of different frequencies coupled to the same or to different ones of the electrodes. The first and second VHF power sources are of sufficiently high and sufficiently low frequencies, respectively, to produce center-high and center-low plasma distribution non-uniformities, respectively, in the chamber.Type: ApplicationFiled: April 11, 2007Publication date: July 31, 2008Inventors: KENNETH S. COLLINS, Hiroji Hanawa, Kartik Ramaswamy, Douglas A. Buchberger, Shahid Rauf, Kallol Bera, Lawrence Wong, Walter R. Merry, Matthew L. Miller, Steven C. Shannon, Andrew Nguyen, James P. Cruse, James Carducci, Troy S. Detrick, Subhash Deshmukh, Jennifer Y. Sun
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Publication number: 20080178803Abstract: A plasma reactor includes a ceiling electrode facing a workpiece support pedestal and a pedestal electrode in the pedestal and first and second VHF power sources of different frequencies coupled to the same or to different ones of the ceiling electrode and the pedestal electrode. The first and second VHF power sources are of sufficiently high and sufficiently low frequencies, respectively, to produce center-high and center-low plasma distribution non-uniformities, respectively, in the chamber. The reactor further includes a controller programmed to change the relative output power levels of the first and second VHF power sources to: (a) increase the relative output power level of the first VHF power source whenever plasma ion distribution has a predominantly edge-high non-uniformity, and (b) increase the relative output power level of the second VHF power source whenever plasma ion distribution has a predominantly center-high non-uniformity.Type: ApplicationFiled: April 11, 2007Publication date: July 31, 2008Inventors: KENNETH S. COLLINS, Hiroji Hanawa, Kartik Ramaswamy, Douglas A. Buchberger, Shahid Rauf, Kallol Bera, Lawrence Wong, Walter R. Merry, Matthew L. Miller, Steven C. Shannon, Andrew Nguyen, James P. Cruse, James Carducci, Troy S. Detrick, Subhash Deshmukh, Jennifer Y. Sun
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Publication number: 20080182418Abstract: A method of processing a workpiece in a plasma reactor chamber includes coupling RF power via an electrode to plasma in the chamber, the RF power being of a variable frequency in a frequency range that includes a fundamental frequency f. The method also includes coupling the electrode to a resonator having a resonant VHF frequency F which is a harmonic of the fundamental frequency f, so as to produce VHF power at the harmonic. The method controls the ratio of power near the fundamental f to power at harmonic F, by controlling the proportion of power from the generator that is up-converted from f to F, so as to control plasma ion density distribution.Type: ApplicationFiled: April 11, 2007Publication date: July 31, 2008Inventors: Kenneth S. Collins, Hiroji Hanawa, Kartik Ramaswamy, Douglas A. Buchberger, Shahid Rauf, Kallol Bera, Lawrence Wong, Walter R. Merry, Matthew L. Miller, Steven C. Shannon, Andrew Nguyen, James P. Cruse, James Carducci, Troy S. Detrick, Subhash Deshmukh, Jennifer Y. Sun
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Publication number: 20080182417Abstract: In a plasma reactor chamber a ceiling electrode and a workpiece support electrode, respective RF power sources of respective VHF frequencies f1 and f2 are coupled to either respective ones of the electrodes or to a common one of the electrodes, where f1 is sufficiently high to produce a center-high non-uniform plasma ion distribution and f2 is sufficiently low to produce a center-low non-uniform plasma ion distribution. Respective center ground return paths are provided for RF current passing directly between the ceiling electrode and the workpiece support electrode for the frequencies f1 and f2, and an edge ground return path is provided for each of the frequencies f1 and f2. The impedance of at least one of the ground return paths is adjusted so as to control the uniformity of the plasma ion density distribution.Type: ApplicationFiled: April 11, 2007Publication date: July 31, 2008Inventors: Kenneth S. Collins, Hiroji Hanawa, Kartik Ramaswamy, Douglas A. Buchberger, Shahid Rauf, Kallol Bera, Lawrence Wong, Walter R. Merry, Matthew L. Miller, Steven C. Shannon, Andrew Nguyen, James P. Cruse, James Carducci, Troy S. Detrick, Subhash Deshmukh, Jennifer Y. Sun
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Publication number: 20080180028Abstract: A method is provided for processing a workpiece in a plasma reactor chamber. The method includes coupling, to a plasma in the chamber, power of an RF frequency via a ceiling electrode and coupling, to the plasma, power of at least approximately the same RF frequency via a workpiece support electrode. The method also includes providing an edge ground return path. The method further includes adjusting the proportion between (a) current flow between said electrodes and (b) current flow to the edge ground return path from said electrodes, to control plasma ion density distribution uniformity over the workpiece.Type: ApplicationFiled: April 11, 2007Publication date: July 31, 2008Inventors: Kenneth S. Collins, Hiroji Hanawa, Kartik Ramaswamy, Douglas A. Buchberger, Shahid Rauf, Kallol Bera, Lawrence Wong, Walter R. Merry, Matthew L. Miller, Steven C. Shannon, Andrew Nguyen, James P. Cruse, James Carducci, Troy S. Detrick, Subhash Deshmukh, Jennifer Y. Sun