Abstract: A transistor active bridge circuit (100) including first and second field-effect transistors (102, 104) of a first channel type, and third and fourth field-effect transistors (106, 108) of a second channel type that is different from the first channel type. The transistor active bridge circuit also includes a plurality of gate drive circuits for the field-effect transistors. A set of voltage dividers (110/112, 114/116, 118/120, 122/124) and/or voltage clamping devices (126, 128, 130, 132) permit the circuit (100) to efficiently operate over a wider range of input voltages, without potential damage to the gate drive circuits.

Abstract: A three-phase bridge rectifier circuit (BRC) connectable to an AC voltage source (ACVS) via input lines (151, 153, 155) and a load (109) via output lines (157, 159). ACVS (102, 104, 106) supplies BRC (100) with AC voltage waveforms that differ in phase. The BRC includes a three-phase bridge rectifier circuit comprised of field effect transistors (FET) and gate drive circuits (GDC). Each GDC (101a, 103a, 101b, 103b, 101c, 103c) supplies a voltage to a gate of a respective FET (110, 112, 114, 116, 118, 120) for switching the FET to its “on” state at a certain time. The BRC further includes a diode (190, 128, 198, 148, 113, 168) connected between a drain of each FET and a terminal of each GDC. The BRC can further include voltage divider circuits (192/188, 130/140, 107/196, 150/160, 115/111, 170/180) and/or voltage clamping devices (121, 131, 123, 133, 125, 135).

Abstract: A three-phase bridge rectifier circuit (TPBRC) connectable to an AC voltage source (102, 104, 106) via input lines (151, 153, 155) and to a load (199) via output lines (159, 157). The AC voltage source supplies the TPBRC (100) with AC voltage waveforms (302, 304, 306) that differ in phase by a certain amount. The TPBRC includes three series transistor combinations (110/112, 114/116, 118/120) connected across the output lines. A plurality of diodes (190, 128, 198, 148, 113, 168) are connected between a drain (152, 122, 162, 132, 172, 142) of one of the field effect transistors (110, 112, 114, 116, 118, 120) and a gate (154, 124, 164, 134, 174, 144) of a different one of the field effect transistors. A voltage divider (192/188, 130/140, 107/196, 150/160, 115/111, 170/180) and a voltage clamping device (194, 138, 109, 158, 119, 178) is provided for each field effect transistor.

Abstract: An n-phase transistor active bridge circuit (BC) connectable between at least two input lines (103, 105, 1051, 1053, 1055) and a pair of output lines (134, 136, 1057, 1059). The BC comprises a plurality of field-effect transistors (FETs) of the same channel type. The FETs (102, 104, 106, 108, 1010, 1012, 1014, 1016, 1018, 1020) are connected to convert an n-phase AC waveform (402, 1102, 1104, 1006) to a DC waveform (502, 1302). The n-phase AC waveform is applied to BC by a voltage source (101, 1002, 1004, 1006) coupled to the input lines. Gate drive circuits (170, 172, 174, 176, 1001a, 1001b, 1001c, 1003a, 1003b, 1003c) supply a voltage to gates (139, 143, 147, 151, 1024, 1034, 1044, 1054, 1064, 1074) of the FETs for switching the FETs to their “on” states or “off” states at predetermined times.

Abstract: An n-phase transistor active bridge circuit (BC) connectable between at least two input lines (103, 105, 1051, 1053, 1055) and a pair of output lines (134, 136, 1057, 1059). The BC comprises a plurality of field-effect transistors (FETs) of the same channel type. The FETs (102, 104, 106, 108, 1010, 1012, 1014, 1016, 1018, 1020) are connected to convert an n-phase AC waveform (402, 1102, 1104, 1006) to a DC waveform (502, 1302). The n-phase AC waveform is applied to BC by a voltage source (101, 1002, 1004, 1006) coupled to the input lines. Gate drive circuits (170, 172, 174, 176, 1001a, 1001b, 1001c, 1003a, 1003b, 1003c) supply a voltage to gates (139, 143, 147, 151, 1024, 1034, 1044, 1054, 1064, 1074) of the FETs for switching the FETs to their “on” states or “off” states at predetermined times.

Abstract: A three-phase bridge rectifier circuit (BRC) connectable to an AC voltage source (ACVS) via input lines (151, 153, 155) and a load (109) via output lines (157, 159). ACVS (102, 104, 106) supplies BRC (100) with AC voltage waveforms that differ in phase. The BRC includes a three-phase bridge rectifier circuit comprised of field effect transistors (FET) and gate drive circuits (GDC). Each GDC (101a, 103a, 101b, 103b, 101c, 103c) supplies a voltage to a gate of a respective FET (110, 112, 114, 116, 118, 120) for switching the FET to its “on” state at a certain time. The BRC further includes a diode (190, 128, 198, 148, 113, 168) connected between a drain of each FET and a terminal of each GDC. The BRC can further include voltage divider circuits (192/188, 130/140, 107/196, 150/160, 115/111, 170/180) and/or voltage clamping devices (121, 131, 123, 133, 125, 135).

Abstract: A three-phase bridge rectifier circuit (TPBRC) connectable to an AC voltage source (102, 104, 106) via input lines (151, 153, 155) and to a load (199) via output lines (159, 157). The AC voltage source supplies the TPBRC (100) with AC voltage waveforms (302, 304, 306) that differ in phase by a certain amount. The TPBRC includes three series transistor combinations (110/112, 114/116, 118/120) connected across the output lines. A plurality of diodes (190, 128, 198, 148, 113, 168) are connected between a drain (152, 122, 162, 132, 172, 142) of one of the field effect transistors (110, 112, 114, 116, 118, 120) and a gate (154, 124, 164, 134, 174, 144) of a different one of the field effect transistors. A voltage divider (192/188, 130/140, 107/196, 150/160, 115/111, 170/180) and a voltage clamping device (194, 138, 109, 158, 119, 178) is provided for each field effect transistor.

Abstract: A transistor active bridge circuit (100) including first and second field-effect transistors (102, 104) of a first channel type, and third and fourth field-effect transistors (106, 108) of a second channel type that is different from the first channel type. The transistor active bridge circuit also includes a plurality of gate drive circuits for the field-effect transistors. A set of voltage dividers (110/112, 114/116, 118/120, 122/124) and/or voltage clamping devices (126, 128, 130, 132) permit the circuit (100) to efficiently operate over a wider range of input voltages, without potential damage to the gate drive circuits.

Abstract: A transistor active bridge circuit (100) provides operation and protection for devices from the effects of battery polarity reversal. The circuit includes first and second field-effect transistors (102, 104) of a first channel type, and third and fourth field-effect transistors (106, 108) of a second channel type that is different from the first channel type. A set of voltage dividers (110, 112, 114, 116, 118, 120, 122, 124) and voltage clamping devices (126, 128, 130, 132) permit the circuit (100) to efficiently operate over a wider range of input voltages, without potential damage to the field-effect transistors.

Abstract: A transistor active bridge circuit (400) rectifies domestic AC mains (for example, 120V, 60 Hz) and/or foreign AC mains (for example, 230V, 50 Hz) with low power loss. The circuit includes first and second field effect transistors (102, 104) of a first channel type, and third and fourth field effect transistors (106, 108) of a second channel type that is different from the first channel type. A set of voltage dividers (110, 112, 114, 116, 118, 120, 122, 124) and voltage clamping devices (126, 128, 130, 132) permit the circuit (400) to efficiently operate over a wider range of input voltages, without potential damage to the field effect transistors. Shoot-through protection devices (420, 430) provide a means for preventing the first and second field effect transistors (102, 104) from conducting simultaneously. Shoot-through protection devices (440, 450) provide a means for preventing the third and fourth field effect transistors (106, 108) from conducting simultaneously.

Abstract: A transistor active bridge circuit (400) rectifies domestic AC mains (for example, 120V, 60 Hz) and/or foreign AC mains (for example, 230V, 50 Hz) with low power loss. The circuit includes first and second field effect transistors (102, 104) of a first channel type, and third and fourth field effect transistors (106, 108) of a second channel type that is different from the first channel type. A set of voltage dividers (110, 112, 114, 116, 118, 120, 122, 124) and voltage clamping devices (126, 128, 130, 132) permit the circuit (400) to efficiently operate over a wider range of input voltages, without potential damage to the field effect transistors. Shoot-through protection devices (420, 430) provide a means for preventing the first and second field effect transistors (102, 104) from conducting simultaneously. Shoot-through protection devices (440, 450) provide a means for preventing the third and fourth field effect transistors (106, 108) from conducting simultaneously.