Abstract: A pharmaceutical composition for dry powder inhalation is provided, including an active ingredient and a first pharmacologically acceptable excipient. The active ingredient includes avanafil or a pharmaceutically acceptable salt thereof. The first pharmacologically acceptable excipient includes amino acid, polysaccharide, phospholipid, polylactic acid, polylactic acid copolymer, or a combination thereof. In some embodiments of the present disclosure, a method of preparing a pharmaceutical composition for dry powder inhalation is further provided. The pharmaceutical composition for dry powder inhalation increases aerosol property, meets the requirements for inhalation administration and reduces onset time.

Abstract: A pharmaceutical composition for dry powder inhalation is provided, including an active ingredient and a first pharmacologically acceptable excipient. The active ingredient includes sildenafil or a pharmaceutically acceptable salt thereof. The first pharmacologically acceptable excipient includes amino acid, phospholipid, polylactic acid, polylactic acid copolymer, sugar alcohol, or a combination thereof. In some embodiments of the present disclosure, a method of preparing a pharmaceutical composition for dry powder inhalation is further provided. The pharmaceutical composition for dry powder inhalation increases aerosol property meets the requirements for inhalation administration and reduces onset time.

Abstract: A pharmaceutical composition for dry powder inhalation is provided, including an active ingredient and a first pharmacologically acceptable excipient. The active ingredient includes tadalafil or a pharmaceutically acceptable salt thereof. The first pharmacologically acceptable excipient includes amino acid, polysaccharide, phospholipid, polylactic acid, polylactic acid copolymer, or a combination thereof. In some embodiments of the present disclosure, a method of preparing a pharmaceutical composition for dry powder inhalation is further provided. The pharmaceutical composition for dry powder inhalation increases aerosol property meets the requirements for inhalation administration and reduces onset time.

Abstract: A pharmaceutical composition for dry powder inhalation is provided, including an active ingredient and a first pharmacologically acceptable excipient. The active ingredient includes vardenafil or a pharmaceutically acceptable salt thereof. The first pharmacologically acceptable excipient includes amino acid, polysaccharide, phospholipid, polylactic acid, polylactic acid copolymer, or a combination thereof. In some embodiments of the present disclosure, a method of preparing a pharmaceutical composition for dry powder inhalation is further provided.

Abstract: A method for manufacturing a semiconductor device is provided. The method includes forming a plurality of semiconductor layers vertically stacked over a substrate, wherein the semiconductor layers are vertically spaced apart from each other; forming a source/drain epitaxial structure on sides of the semiconductor layers, wherein the source/drain epitaxial structure is doped with a p-type doping species; implanting fluorine ions into the source/drain epitaxial structure; after implanting fluorine ions into the source/drain epitaxial structure, performing an annealing process to diffuse the p-type doping species into a side region of a topmost one of the semiconductor layers; and forming a source/drain contact over the source/drain epitaxial structure.

Abstract: Present invention teaches the method of using a keratin hydrolysis peptide (“KHP”) solution to accelerate the ripening and color change of the coffee fruits, to increase the reducing sugar content, and to decrease the chlorogenic acid content in coffee beans. By selectively choosing specific weights of feathers and water, and treating the mixture, though one embodiment does not have water mixed in, to a high-temperature high-pressure hydrolysis process, the resulting solution is confirmed to contain at least 253 peptides and then applied to the leaf surface of coffee plants at different growth stages. Optionally, the KHP solution can be diluted by water, as taught in the specification, before applying to the leaf surface of the coffee plants.

Abstract: Present invention teaches the method of using a keratin hydrolysis peptide (“KHP”) solution to increase the coffee production. By selectively choosing specific weights of feathers and water, and treating the mixture, though one embodiment does not have water mixed in, to a high-temperature high-pressure hydrolysis process, the resulting solution is confirmed to contain at least 253 peptides and then applied to the leaf surface of coffee plants at different growth stages. Optionally, the KHP solution can be diluted by water, as taught in the specification, before applying to the leaf surface of the coffee plants.

Abstract: A semiconductor device structure and methods of forming the same are described. The structure includes a first semiconductor material disposed over a substrate and a dielectric layer disposed on the first semiconductor material. The dielectric layer includes a dopant. The structure further includes a second semiconductor material disposed on the dielectric layer, a first semiconductor layer in contact with the second semiconductor material, and a first dielectric spacer in contact with the first semiconductor layer, wherein the first dielectric spacer includes the dopant.

Abstract: An inspiration system related symptom sensing system includes a patch and a processor. The patch includes at least one vibrator and a plurality of receivers. Each of the receivers is configured to generate a reference vibration signal corresponding to the vibrator and a vibration signal corresponding to an inspiration system of an organism. The processor is configured to determine a relative position of each of the receivers related to the inspiration system of the organism based on the reference vibration signals, the vibration signals, and a plurality of positional relationships of the vibrator corresponding to each of the receivers. The processor is configured to generate a spatial position corresponding to the inspiration system and a corresponding symptom type by using a classification model based on the abnormal signals and the relative positions corresponding to the receivers.

Abstract: A pharmaceutical composition for dry powder inhalation includes an active ingredient and a first pharmacologically acceptable excipient. The active ingredient includes bedaquiline or a pharmaceutically acceptable salt thereof. The first pharmacologically acceptable excipient includes amino acid, polysaccharide, phospholipid, polylactic acid, polylactic acid copolymer, or a combination thereof. A method of preparing a pharmaceutical composition for dry powder inhalation is also provided.

Abstract: A method according to the present disclosure includes providing a workpiece including a first fin-shaped structure and a second fin-shaped structure over a substrate, depositing a nitride liner over the substrate and sidewalls of the first fin-shaped structure and the second fin-shaped structure, forming an isolation feature over the nitride liner and between the first fin-shaped structure and the second fin-shaped structure, epitaxially growing a cap layer on exposed surfaces of the first fin-shaped structure and the second fin-shaped structure and above the nitride liner, crystalizing the cap layer, and forming a first source/drain feature over a first source/drain region of the first fin-shaped structure and a second source/drain feature over a second source/drain region of the second fin-shaped structure.

Abstract: To reduce a thickness variation of a spin-on coating (SOC) layer that is applied over a plurality of first and second trenches with different pattern densities as a bottom layer in a photoresist stack, a two-step thermal treatment process is performed on the SOC layer. A first thermal treatment step in the two-step thermal treatment process is conducted at a first temperature below a cross-linking temperature of the SOC layer to cause flow of the SOC layer, and a second thermal treatment step in the two-step thermal treatment process is conducted at a second temperature to cause cross-linking of the SOC layer.

Abstract: A method for manufacturing a semiconductor device is provided. The method includes forming at least one epitaxial layer over a substrate; patterning the epitaxial layer into a semiconductor fin; depositing a conformal semiconductor capping layer over the semiconductor fin, wherein the conformal semiconductor capping layer has a first portion that is amorphous; performing a thermal treatment such that the first portion of the conformal semiconductor capping layer is converted from amorphous into crystalline; depositing a dielectric material over the conformal semiconductor capping layer; annealing the dielectric material, such that the conformal semiconductor capping layer is converted into a semiconductor-containing oxide layer; recessing the dielectric material and the semiconductor-containing oxide layer to form an isolation structure around the semiconductor fin; and forming a gate structure over the semiconductor fin and the isolation structure.

Abstract: To reduce a thickness variation of a spin-on coating (SOC) layer that is applied over a plurality of first and second trenches with different pattern densities as a bottom layer in a photoresist stack, a two-step thermal treatment process is performed on the SOC layer. A first thermal treatment step in the two-step thermal treatment process is conducted at a first temperature below a cross-linking temperature of the SOC layer to cause flow of the SOC layer, and a second thermal treatment step in the two-step thermal treatment process is conducted at a second temperature to cause cross-linking of the SOC layer.

Abstract: A method includes etching a semiconductor substrate to form a trench and a semiconductor strip. A sidewall of the semiconductor strip is exposed to the trench. The method further includes depositing a silicon-containing layer extending into the trench, wherein the silicon-containing layer extends on the sidewall of the semiconductor strip, filling the trench with a dielectric material, wherein the dielectric material is on a sidewall of the silicon-containing layer, and oxidizing the silicon-containing layer to form a liner. The liner comprises oxidized silicon. The liner and the dielectric material form parts of an isolation region. The isolation region is recessed, so that a portion of the semiconductor strip protrudes higher than a top surface of the isolation region and forms a semiconductor fin.

Abstract: A medical document analysis method includes following steps: performing recursive search based on keywords extracted from first medical documents to obtain second medical documents; analyzing feature labels of the second medical documents; projecting the second medical documents onto a multi-dimensional map according to the feature labels; estimating second symptoms from a first symptom; selecting third medical documents based on the first symptom and the second symptom from the multi-dimensional map; analyzing correlation between the third medical documents and their respective feature labels in the multi-dimensional map to form a label topology map; and selecting a target branch path from branch paths in the label topology map, and displaying information about the target branch path.

Abstract: A method includes etching a semiconductor substrate to form a trench and a semiconductor strip. A sidewall of the semiconductor strip is exposed to the trench. The method further includes depositing a silicon-containing layer extending into the trench, wherein the silicon-containing layer extends on the sidewall of the semiconductor strip, filling the trench with a dielectric material, wherein the dielectric material is on a sidewall of the silicon-containing layer, and oxidizing the silicon-containing layer to form a liner. The liner comprises oxidized silicon. The liner and the dielectric material form parts of an isolation region. The isolation region is recessed, so that a portion of the semiconductor strip protrudes higher than a top surface of the isolation region and forms a semiconductor fin.

Abstract: In an embodiment, a device includes: a first semiconductor fin extending from a substrate; a second semiconductor fin extending from the substrate; a hybrid fin over the substrate, the second semiconductor fin disposed between the first semiconductor fin and the hybrid fin; a first isolation region between the first semiconductor fin and the second semiconductor fin; and a second isolation region between the second semiconductor fin and the hybrid fin, a top surface of the second isolation region disposed further from the substrate than a top surface of the first isolation region.

Abstract: A method includes forming a pad layer. The pad layer includes a first portion over a first part of a semiconductor substrate, and a second portion over a second part of the semiconductor substrate. The first portion has a first thickness, and the second portion has a second thickness smaller than the first thickness. The semiconductor substrate is then annealed to form a first oxide layer over the first part of the semiconductor substrate, and a second oxide layer over the second part of the semiconductor substrate. The pad layer, the first oxide layer, and the second oxide layer are removed. A semiconductor layer is epitaxially grown over and contacting the first part and the second part of the semiconductor substrate.

Abstract: In an embodiment, a device includes: a first semiconductor fin extending from a substrate; a second semiconductor fin extending from the substrate; a hybrid fin over the substrate, the second semiconductor fin disposed between the first semiconductor fin and the hybrid fin; a first isolation region between the first semiconductor fin and the second semiconductor fin; and a second isolation region between the second semiconductor fin and the hybrid fin, a top surface of the second isolation region disposed further from the substrate than a top surface of the first isolation region.