Abstract: Provided is a non-volatile semiconductor memory device, including: column lines and row lines; a column decoder for generating a column strobe signal to activate a column line according to a column address signal; a row decoder for generating a row strobe signal to activate a row line according to a row address signal; and a memory array including non-volatile memory cells at junctions of the column lines and row lines respectively. The non-volatile memory cells are each coupled to one of the column lines via a column-enabling switch and to one of the row lines via at least one row-enabling switch. The column-enabling switch and row-enabling switch allow the activated column line and activated row line to enable the non-volatile memory cells according to the row strobe signal and column strobe signal respectively so that the enabled non-volatile memory cells operate in a programming, erasing or reading mode.

Abstract: Provided is a measurement system including: a first chip including at least one first PN junction element adapted to sense a temperature of the first chip; and a second chip electrically connected to the first chip to form a first loop including the first PN junction element. The second chip includes a second loop. The second loop includes at least one second PN junction element adapted to sense a temperature of the second chip. The second chip provides multiple currents in the first loop and the second loop to generate voltage signals associated with the temperature of the first chip and the temperature of the second chip according to the first PN junction element and the second PN junction element and thus calculate the temperature difference between the first chip and the second chip. A measurement method applicable to the measurement system is further provided.

Abstract: A temperature measurement system and method are provided. The temperature measurement system includes: at least one first PN junction element disposed at a first chip to sense a temperature of the first chip; at least one second PN junction element disposed at a second chip to sense a temperature of the second chip; a second temperature measurement circuit electrically connected to the first and second PN junction elements and disposed at the second chip for measuring to obtain a temperature difference value between the first chip and the second chip; a third temperature measurement circuit comprising at least one third PN junction element and disposed at the second chip for measuring to obtain a temperature value of the second chip; and a processing unit for calculating the temperature difference value and the temperature value of the second chip to obtain a temperature value of the first chip.

Abstract: A temperature sensor adapted in a charge and discharge control circuit of a secondary battery, cooperates with a micro-controller of the charge and discharge control circuit. The temperature sensor is a non-polar temperature sensor manufactured by the semiconductor manufacturing technology. The temperature sensor includes a first signal pin, a second signal pin, a first thermal diode, and a second thermal diode paired with the first thermal diode. The positive electrode of the first thermal diode and the negative electrode of the second thermal diode, both connect to the first signal pin. The negative electrode of the first thermal diode and the positive electrode of the second thermal diode, both connect to the second signal pin. The temperature sensor is proofread easily, has a low manufacturing cost, consumes less power and has an excellent anti-interfere capability, etc.

Abstract: A temperature sensor module includes a first temperature sensor configured for sensing the temperature of the environment, and a second temperature sensor configured for sensing the temperature of an eardrum. The first temperature sensor is a thermal diode, and the second temperature sensor is a thermopile. Preferably, the second temperature sensor may be a CMOS-infrared temperature sensor. The first temperature sensor and the second temperature sensor are both made of the semiconductor material such that they have same physical characters and same raising/falling temperature speeds even if entering into the environment with the different temperatures. Therefore, they are proofread easily, have a low manufacturing cost and consume low power.

Abstract: Backward-mapping switched capacitor (SC) differentiators for MOS technology integrated circuit implementation, as well as forward mapping (FM) and bilinear-mapping (BIM) SC differentiators, are disclosed. The SC differentiator is employed in filters either alone or in combination with SC integrators. The filters include biquads, ladder filters, FIR filters, IIR filters and N-path filters.A fully differential operational amplifier with high and symmetrical driving capability is also described.

Abstract: Sigma-delta analog to digital converters based upon switched capacitor delay and switched capacitor differentiator circuits are described. These switched capacitor circuits have the advantages that they are less sensitive to clock feed-through noise, dc offset voltage and power supply voltage, etc. Design examples of one-bit second-order sigma-delta analog digital converter are given to substantiate both design methodology, circuit features and the utility of these new circuit structures.