Patents by Inventor Tsai-Feng YANG

Tsai-Feng YANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ultra high voltage semiconductor device with electrostatic discharge capabilities
    Patent number: 10840371
    Abstract: The method comprises forming a drain region in the first layer. The drain region is formed comprising a drain rectangular portion having a first end and a second end, a first drain end portion contiguous with the drain rectangular portion and extending from the first end of the drain rectangular portion away from a center of the drain region, and a second drain end portion contiguous with the drain rectangular portion and extending from the second end of the drain rectangular portion away from the center of the drain region. The method also comprises forming a source region free from contact with and surrounding the drain region in the first layer.
    Type: Grant
    Filed: October 25, 2019
    Date of Patent: November 17, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tsai-Feng Yang, Chih-Heng Shen, Chun-Yi Yang, Kun-Ming Huang, Po-Tao Chu, Shen-Ping Wang
  • ULTRA HIGH VOLTAGE SEMICONDUCTOR DEVICE WITH ELECTROSTATIC DISCHARGE CAPABILITIES
    Publication number: 20200066902
    Abstract: The method comprises forming a drain region in the first layer. The drain region is formed comprising a drain rectangular portion having a first end and a second end, a first drain end portion contiguous with the drain rectangular portion and extending from the first end of the drain rectangular portion away from a center of the drain region, and a second drain end portion contiguous with the drain rectangular portion and extending from the second end of the drain rectangular portion away from the center of the drain region. The method also comprises forming a source region free from contact with and surrounding the drain region in the first layer.
    Type: Application
    Filed: October 25, 2019
    Publication date: February 27, 2020
    Inventors: Tsai-Feng YANG, Chih-Heng SHEN, Chun-Yi YANG, Kun-Ming HUANG, Po-Tao CHU, Shen-Ping WANG
  • Ultra high voltage semiconductor device with electrostatic discharge capabilities
    Patent number: 10461183
    Abstract: A device having a drain region with a drain rectangular portion having a first end and a second end, a first drain end portion contiguous with the drain rectangular portion and extending from the first end of the drain rectangular portion away from a center of the drain region, and a second drain end portion contiguous with the drain rectangular portion and extending from the second end of the drain rectangular portion away from the center of the drain region. The semiconductor device also comprises a source region spaced from and surrounding the drain region in the first layer.
    Type: Grant
    Filed: January 29, 2018
    Date of Patent: October 29, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tsai-Feng Yang, Chih-Heng Shen, Chun-Yi Yang, Kun-Ming Huang, Po-Tao Chu, Shen-Ping Wang
  • ULTRA HIGH VOLTAGE SEMICONDUCTOR DEVICE WITH ELECTROSTATIC DISCHARGE CAPABILITIES
    Publication number: 20180151724
    Abstract: A device having a drain region with a drain rectangular portion having a first end and a second end, a first drain end portion contiguous with the drain rectangular portion and extending from the first end of the drain rectangular portion away from a center of the drain region, and a second drain end portion contiguous with the drain rectangular portion and extending from the second end of the drain rectangular portion away from the center of the drain region. The semiconductor device also comprises a source region spaced from and surrounding the drain region in the first layer.
    Type: Application
    Filed: January 29, 2018
    Publication date: May 31, 2018
    Inventors: Tsai-Feng YANG, Chih-Heng SHEN, Chun-Yi YANG, Kun-Ming HUANG, Po-Tao CHU, Shen-Ping WANG
  • Ultra high voltage semiconductor device with electrostatic discharge capabilities
    Patent number: 9882046
    Abstract: A method includes forming a drain region in a first layer on a semiconductor substrate. The drain region is formed comprising a drain rectangular portion having a first end and a second end, a first drain end portion contiguous with the drain rectangular portion and extending from the first end of the drain rectangular portion away from a center of the drain region, and a second drain end portion contiguous with the drain rectangular portion and extending from the second end of the drain rectangular portion away from the center of the drain region. The method also comprises forming a source region free from contact with and surrounding the drain region in the first layer. The first drain end portion and the second drain end portion are formed having a same doping type and a different doping concentration than the drain rectangular portion.
    Type: Grant
    Filed: April 8, 2016
    Date of Patent: January 30, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tsai-Feng Yang, Chih-Heng Shen, Chun-Yi Yang, Kun-Ming Huang, Po-Tao Chu, Shen-Ping Wang
  • Isolation structure for semiconductor device
    Patent number: 9608060
    Abstract: A semiconductor structure includes a substrate, a semiconductor device in the substrate, and an isolating structure in the substrate and adjacent to the semiconductor device. The isolating structure has a roughness surface at a sidewall of the isolating structure, and the roughness surface includes carbon atoms thereon.
    Type: Grant
    Filed: November 6, 2014
    Date of Patent: March 28, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Chieh Chou, Tsai-Feng Yang, Chun-Yi Yang, Kun-Ming Huang, Shen-Ping Wang, Lieh-Chuan Chen, Po-Tao Chu
  • ULTRA HIGH VOLTAGE SEMICONDUCTOR DEVICE WITH ELECTROSTATIC DISCHARGE CAPABILITIES
    Publication number: 20160225899
    Abstract: A method includes forming a drain region in a first layer on a semiconductor substrate. The drain region is formed comprising a drain rectangular portion having a first end and a second end, a first drain end portion contiguous with the drain rectangular portion and extending from the first end of the drain rectangular portion away from a center of the drain region, and a second drain end portion contiguous with the drain rectangular portion and extending from the second end of the drain rectangular portion away from the center of the drain region. The method also comprises forming a source region free from contact with and surrounding the drain region in the first layer. The first drain end portion and the second drain end portion are formed having a same doping type and a different doping concentration than the drain rectangular portion.
    Type: Application
    Filed: April 8, 2016
    Publication date: August 4, 2016
    Inventors: Tsai-Feng Yang, Chih-Heng Shen, Chun-Yi Yang, Kun-Ming Huang, Po-Tao Chu, Shen-Ping Wang
  • SEMICONDUCTOR STRUCTURE AND PREPARATION METHOD THEREOF
    Publication number: 20160133698
    Abstract: A semiconductor structure includes a substrate, a semiconductor device in the substrate, and an isolating structure in the substrate and adjacent to the semiconductor device. The isolating structure has a roughness surface at a sidewall of the isolating structure, and the roughness surface includes carbon atoms thereon.
    Type: Application
    Filed: November 6, 2014
    Publication date: May 12, 2016
    Inventors: Yu-Chieh CHOU, Tsai-Feng YANG, Chun-Yi YANG, Kun-Ming HUANG, Shen-Ping WANG, Lieh-Chuan CHEN, Po-Tao CHU
  • Ultra high voltage semiconductor device with electrostatic discharge capabilities
    Patent number: 9312348
    Abstract: A semiconductor device comprises a semiconductor substrate, a first layer over the semiconductor substrate, and a drain region in the first layer. The drain region comprises a drain rectangular portion having a first end and a second end, a first drain end portion contiguous with the drain rectangular portion and extending from the first end of the drain rectangular portion away from a center of the drain region, and a second drain end portion contiguous with the drain rectangular portion and extending from the second end of the drain rectangular portion away from the center of the drain region. The semiconductor device also comprises a source region free from contact with and surrounding the drain region in the first layer. The first drain end portion and the second drain end portion have a same doping type and a different doping concentration than the drain rectangular portion.
    Type: Grant
    Filed: March 20, 2014
    Date of Patent: April 12, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tsai-Feng Yang, Chun-Yi Yang, Kun-Ming Huang, Shen-Ping Wang, Chih-Heng Shen, Po-Tao Chu
  • ULTRA HIGH VOLTAGE SEMICONDUCTOR DEVICE WITH ELECTROSTATIC DISCHARGE CAPABILITIES
    Publication number: 20150236107
    Abstract: A semiconductor device comprises a semiconductor substrate, a first layer over the semiconductor substrate, and a drain region in the first layer. The drain region comprises a drain rectangular portion having a first end and a second end, a first drain end portion contiguous with the drain rectangular portion and extending from the first end of the drain rectangular portion away from a center of the drain region, and a second drain end portion contiguous with the drain rectangular portion and extending from the second end of the drain rectangular portion away from the center of the drain region. The semiconductor device also comprises a source region free from contact with and surrounding the drain region in the first layer. The first drain end portion and the second drain end portion have a same doping type and a different doping concentration than the drain rectangular portion.
    Type: Application
    Filed: March 20, 2014
    Publication date: August 20, 2015
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Tsai-Feng YANG, Chun-Yi YANG, Kun-Ming HUANG, Shen-Ping WANG, Chih-Heng SHEN, Po-Tao CHU