Patents by Inventor Tsai-Fu Ou

Tsai-Fu Ou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and system for improved overlay correction
    Patent number: 8867018
    Abstract: A method for improving alignment in a photolithography machine is provided. The method comprises identifying first empirical alignment data that has been determined from use of a target photomask within at least one non-target tool, and identifying second empirical alignment data that has been determined from use of a non-target photomask within a target tool. The method continues by identifying third empirical alignment data that has been determined from use of a non-target photomask within at least one non-target tool, and calculating from the first, second, and third empirical alignment data a predicted alignment data for the target photomask with the target tool. The method then proceeds by aligning the target photomask within the target tool using the predicted alignment data, exposing a pattern from the target photomask onto the wafer in the target tool, and further processing the exposed wafer.
    Type: Grant
    Filed: November 12, 2009
    Date of Patent: October 21, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shin-Rung Lu, Tsai-Fu Ou, Wen-Yao Hsieh
  • Method and System for Improved Overlay Correction
    Publication number: 20100201965
    Abstract: A method for improving alignment in a photolithography machine is provided. The method comprises identifying first empirical alignment data that has been determined from use of a target photomask within at least one non-target tool, and identifying second empirical alignment data that has been determined from use of a non-target photomask within a target tool. The method continues by identifying third empirical alignment data that has been determined from use of a non-target photomask within at least one non-target tool, and calculating from the first, second, and third empirical alignment data a predicted alignment data for the target photomask with the target tool. The method then proceeds by aligning the target photomask within the target tool using the predicted alignment data, exposing a pattern from the target photomask onto the wafer in the target tool, and further processing the exposed wafer.
    Type: Application
    Filed: November 12, 2009
    Publication date: August 12, 2010
    Inventors: Shin-Rung Lu, Tsai-Fu Ou, Wen-Yao Hsieh