Patents by Inventor Tsai-Ji Liou

Tsai-Ji Liou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and system for forming metal-insulator-metal capacitors
    Patent number: 12369336
    Abstract: A semiconductor processing system is provided to form a capacitor dielectric layer in a metal-insulator-metal capacitor. The semiconductor processing system includes a precursor tank configured to generate a precursor gas from a metal organic solid precursor, a processing chamber configured to perform a plasma enhanced chemical vapor deposition, and at least one buffer tank between the precursor tank and the processing chamber. The at least one buffer tank is coupled to the precursor tank via a first pipe and coupled to the processing chamber via a second pipe.
    Type: Grant
    Filed: July 29, 2022
    Date of Patent: July 22, 2025
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Wei-Liang Chen, Yu-Lung Yeh, Chihchous Chuang, Yen-Hsiu Chen, Tsai-Ji Liou, Yung-Hsiang Chen, Ching-Hung Huang
  • METHOD AND SYSTEM FOR FORMING METAL-INSULATOR-METAL CAPACITORS
    Publication number: 20220367604
    Abstract: A semiconductor processing system is provided to form a capacitor dielectric layer in a metal-insulator-metal capacitor. The semiconductor processing system includes a precursor tank configured to generate a precursor gas from a metal organic solid precursor, a processing chamber configured to perform a plasma enhanced chemical vapor deposition, and at least one buffer tank between the precursor tank and the processing chamber. The at least one buffer tank is coupled to the precursor tank via a first pipe and coupled to the processing chamber via a second pipe.
    Type: Application
    Filed: July 29, 2022
    Publication date: November 17, 2022
    Inventors: Wei-Liang CHEN, Yu-Lung YEH, Chihchous CHUANG, Yen-Hsiu CHEN, Tsai-Ji LIOU, Yung-Hsiang CHEN, Ching-Hung HUANG
  • Method and system for forming metal-insulator-metal capacitors
    Patent number: 11502160
    Abstract: A semiconductor processing system is provided to form a capacitor dielectric layer in a metal-insulator-metal capacitor. The semiconductor processing system includes a precursor tank configured to generate a precursor gas from a metal organic solid precursor, a processing chamber configured to perform a plasma enhanced chemical vapor deposition, and at least one buffer tank between the precursor tank and the processing chamber. The at least one buffer tank is coupled to the precursor tank via a first pipe and coupled to the processing chamber via a second pipe.
    Type: Grant
    Filed: March 2, 2020
    Date of Patent: November 15, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Wei-Liang Chen, Yu-Lung Yeh, Chihchous Chuang, Yen-Hsiu Chen, Tsai-Ji Liou, Yung-Hsiang Chen, Ching-Hung Huang
  • METHOD AND SYSTEM FOR FORMING METAL-INSULATOR-METAL CAPACITORS
    Publication number: 20210273038
    Abstract: A semiconductor processing system is provided to form a capacitor dielectric layer in a metal-insulator-metal capacitor. The semiconductor processing system includes a precursor tank configured to generate a precursor gas from a metal organic solid precursor, a processing chamber configured to perform a plasma enhanced chemical vapor deposition, and at least one buffer tank between the precursor tank and the processing chamber. The at least one buffer tank is coupled to the precursor tank via a first pipe and coupled to the processing chamber via a second pipe.
    Type: Application
    Filed: March 2, 2020
    Publication date: September 2, 2021
    Inventors: Wei-Liang Chen, Yu-Lung Yeh, Chihchous Chuang, Yen-Hsiu Chen, Tsai-Ji Liou, Yung-Hsiang Chen, Ching-Hung Huang