Abstract: The present invention discloses a photolithography process with a gas-phase pretreatment before the development of photoresist to increase the depth of focus (DOF) of an isolated-line pattern on a substrate. A photoresist layer is coated on a substrate by using spin-on technology. Then, an exposure process is performed on the photoresist layer through a reticle to transfer a pattern of the reticle to the photoresist layer. Additionally, a gas-phase pretreatment is performed on the photoresist layer before or after the exposure process to harden the surface of the photoresist layer. Finally, a developing process is performed to form a pattern on the substrate.

Abstract: The present invention discloses an apparatus for photolithography process with phase-pretreatment. The apparatus comprises several chambers: a vapor prime chamber, a vacuum-bake chamber, a chill-plate chamber, a coater chamber and a stepper chamber. Further, an interface chamber is between the stepper chamber and the apparatus. These chambers are connected together to a track system. A base gas is introduced into one of these chambers to perform a gas-phase pretreatment. The concentration of the base gas can be controlled and the processing time of the pretreatment process is well controlled by operating the apparatus. As a photoresist layer is applied on a substrate, the photoresist layer is hardened in the base gas to increase the depth of focus in photolithography process.