Abstract: A memory array is provided that includes a plurality of word lines and a plurality of bit lines, and a plurality of memory cells each including a corresponding magnetic memory element coupled in series with a corresponding selector element. Each memory cell is coupled between one of the word lines and one of the bit lines. Each memory cell has a half-pitch F, and comprises an area between 2F2 and 4F2.

Abstract: A method for system profiling and controlling and a computer system performing the same are provided. In the method, an operating system is operated after the computer system is booted, in which a profiling-controlling system is operated. When the operating system loads and executes a system profiling-controlling program, the profiling-controlling system that simultaneously operates a profiling routine and a controlling routine is initiated. The profiling routine is used to retrieve system kernel data that is generated during operation of the operating system and analyze the system kernel data through a kernel tracing tool. When it is determined that controlling is required, the profiling routine notifies the controlling routine. The controlling routine controls operating parameters of the operating system in real time according to an analysis result generated by the profiling routine.

Abstract: A device structure includes first electrically conductive lines, second electrically conductive lines that are vertically spaced apart from the first electrically conductive lines, a two-dimensional array of magnetic tunnel junctions located between the first electrically conductive lines and the second electrically conductive lines, and a two-dimensional array of selector elements located in series with the two-dimensional array of magnetic tunnel junctions. Each of the magnetic tunnel junctions includes a respective reference layer, a respective nonmagnetic tunnel barrier layer, and a respective free layer, and has a respective pair of first tapered planar sidewalls laterally extending along a first horizontal direction and a respective pair of second tapered planar sidewalls laterally extending along a second horizontal direction.

Abstract: A method for configuring network traffic and a computer system are provided. The computer system includes a processing unit and a network module that is operated based on a bandwidth configuration. The processing unit operates an operating system that executes a profiling-controlling program. The method is performed in the operating system. In the method, the operating system initiates a system kernel, and the profiling-controlling program can obtain kernel operation information from the system kernel, so that information of multiple applications operating in a foreground process and a background process of the operating system can be retrieved. A priority order is decided, and a network bandwidth configuration is formed and written into traffic control instructions of the system kernel or a driver of the network module. The network bandwidth configuration allows the operating system to perform a traffic configuration on each of the applications.

Abstract: A memory device includes a cross-point array of spin-torque transfer MRAM cells. First rail structures laterally extend along a first horizontal direction. Each of the first rail structures includes a vertical stack including, from bottom to top, a first electrically conductive line, a reference layer having a fixed magnetization direction, and a tunnel barrier layer. Second rail structures laterally extend along a second horizontal direction. Each of the second rail structures includes a second electrically conductive line that overlies the first rail structures. A two-dimensional array of pillar structures is located between a respective one of the first rail structures and a respective one of the second rail structures. Each of the pillar structures includes a free layer having energetically stable magnetization orientations that are parallel or antiparallel to the fixed magnetization direction.

Abstract: A memory device includes a cross-point array of magnetoresistive memory cells. Each magnetoresistive memory cell includes a vertical stack of a selector-containing pillar structure and a magnetic tunnel junction pillar structure. The lateral spacing between neighboring pairs of magnetoresistive memory cells may be smaller along a first horizontal direction than along a second horizontal direction, and a dielectric spacer or a tapered etch process may be used to provide a pattern of an etch mask for patterning first electrically conductive lines underneath the magnetoresistive memory cells. Alternatively, a resist layer may be employed to pattern first electrically conductive lines underneath the cross-point array. Alternatively, a protective dielectric liner may be provided to protect selector-containing pillar structures during formation of the magnetic tunnel junction pillar structures.

Abstract: A memory device includes a cross-point array of magnetoresistive memory cells. Each magnetoresistive memory cell includes a vertical stack of a selector-containing pillar structure and a magnetic tunnel junction pillar structure. The lateral spacing between neighboring pairs of magnetoresistive memory cells may be smaller along a first horizontal direction than along a second horizontal direction, and a dielectric spacer or a tapered etch process may be used to provide a pattern of an etch mask for patterning first electrically conductive lines underneath the magnetoresistive memory cells. Alternatively, a resist layer may be employed to pattern first electrically conductive lines underneath the cross-point array. Alternatively, a protective dielectric liner may be provided to protect selector-containing pillar structures during formation of the magnetic tunnel junction pillar structures.

Abstract: A device for manufacturing dimethyl carbonate including a reaction section and a separation section is provided. The reaction section includes a first distillation column, a methanol supply device, a carbon dioxide supply device, a dehydrating agent supply device, and a side reactor. The methanol supply device is connected to the first distillation column. The carbon dioxide supply device is connected to the first distillation column. The dehydrating agent supply device is connected to the first distillation column. A feed nozzle of the side reactor is connected to a gas outlet of a top of the first distillation column. A discharge nozzle of the side reactor is connected to a recycle nozzle of the first distillation column. A catalyst is disposed in the side reactor. The separation section includes a second distillation column. The second distillation column is connected to a liquid outlet of a bottom of the first distillation column.

Abstract: A memory device includes a cross-point array of spin-torque transfer MRAM cells. First rail structures laterally extend along a first horizontal direction. Each of the first rail structures includes a vertical stack including, from bottom to top, a first electrically conductive line, a reference layer having a fixed magnetization direction, and a tunnel barrier layer. Second rail structures laterally extend along a second horizontal direction. Each of the second rail structures includes a second electrically conductive line that overlies the first rail structures. A two-dimensional array of pillar structures is located between a respective one of the first rail structures and a respective one of the second rail structures. Each of the pillar structures includes a free layer having energetically stable magnetization orientations that are parallel or antiparallel to the fixed magnetization direction.

Abstract: A device for manufacturing dimethyl carbonate including a reaction section and a separation section is provided. The reaction section includes a first distillation column, a methanol supply device, a carbon dioxide supply device, a dehydrating agent supply device, and a side reactor. The methanol supply device is connected to the first distillation column. The carbon dioxide supply device is connected to the first distillation column. The dehydrating agent supply device is connected to the first distillation column. A feed nozzle of the side reactor is connected to a gas outlet of a top of the first distillation column. A discharge nozzle of the side reactor is connected to a recycle nozzle of the first distillation column. A catalyst is disposed in the side reactor. The separation section includes a second distillation column. The second distillation column is connected to a liquid outlet of a bottom of the first distillation column.

Abstract: A memory device includes a cross-point array of spin-torque transfer MRAM cells. First rail structures laterally extend along a first horizontal direction. Each of the first rail structures includes a vertical stack including, from bottom to top, a first electrically conductive line, a reference layer having a fixed magnetization direction, and a tunnel barrier layer. Second rail structures laterally extend along a second horizontal direction. Each of the second rail structures includes a second electrically conductive line that overlies the first rail structures. A two-dimensional array of pillar structures is located between a respective one of the first rail structures and a respective one of the second rail structures. Each of the pillar structures includes a free layer having energetically stable magnetization orientations that are parallel or antiparallel to the fixed magnetization direction.

Abstract: A memory array is provided that includes a plurality of word lines and a plurality of bit lines, and a plurality of memory cells each including a corresponding magnetic memory element coupled in series with a corresponding selector element. Each memory cell is coupled between one of the word lines and one of the bit lines. Each memory cell has a half-pitch F, and comprises an area between 2F2 and 4F2.

Abstract: A memory array is provided that includes a first memory level having a plurality of memory cells each including a corresponding magnetic memory element coupled in series with a corresponding selector element, and a plurality of vias, each of the vias coupled in series with a corresponding one of the memory cells.

Abstract: A memory device includes a cross-point array of spin-torque transfer MRAM cells. First rail structures laterally extend along a first horizontal direction. Each of the first rail structures includes a vertical stack including, from bottom to top, a first electrically conductive line, a reference layer having a fixed magnetization direction, and a tunnel barrier layer. Second rail structures laterally extend along a second horizontal direction. Each of the second rail structures includes a second electrically conductive line that overlies the first rail structures. A two-dimensional array of pillar structures is located between a respective one of the first rail structures and a respective one of the second rail structures. Each of the pillar structures includes a free layer having energetically stable magnetization orientations that are parallel or antiparallel to the fixed magnetization direction.

Abstract: A memory array is provided that includes a first memory level having a plurality of memory cells each including a corresponding magnetic memory element coupled in series with a corresponding selector element, and a plurality of vias, each of the vias coupled in series with a corresponding one of the memory cells.

Abstract: A method for making a bit-patterned media (BPM) magnetic recording disk by etching the recording layer using a patterned hard mask layer uses glancing angle deposition (GLAD) of additional hard mask material as a capping layer onto the tops of the patterned hard mask pillars while the disk is rotated about an axis orthogonal to the plane of the disk. In one embodiment the capping layer is deposited after the pillars have been only partially eroded during a partial ion-milling of the recording layer. Ion-milling is then again performed to remove the remaining recording layer material. In another embodiment, before ion-milling of the recording layer, the capping layer is deposited onto the tops of the un-eroded hard mask pillars. This increases the lateral dimension of the hard mask pillars so that after ion-milling of the recording layer, the magnetic islands have an increased lateral dimension.

Abstract: A method for making a bit-patterned media (BPM) magnetic recording disk by etching the recording layer using a patterned hard mask layer uses glancing angle deposition (GLAD) of additional hard mask material as a capping layer onto the tops of the patterned hard mask pillars while the disk is rotated about an axis orthogonal to the plane of the disk. In one embodiment the capping layer is deposited after the pillars have been only partially eroded during a partial ion-milling of the recording layer. Ion-milling is then again performed to remove the remaining recording layer material. In another embodiment, before ion-milling of the recording layer, the capping layer is deposited onto the tops of the un-eroded hard mask pillars. This increases the lateral dimension of the hard mask pillars so that after ion-milling of the recording layer, the magnetic islands have an increased lateral dimension.

Abstract: A system, method and apparatus for manufacturing high density magnetic media is disclosed. A flexible mold having a very low modulus of less than about 4 GPa is made on a rigid support. The mold nano-imprints a resist material on disks for hard disk drives. The flexible mold may comprise a perfluoropolyether with urethane acrylate end groups with a low surface adhesion from which the cured resist is easily released.

Abstract: A method for patterning a substrate is disclosed. Depressions are patterned into a resist layer over a substrate. A mask layer is deposited over the resist layer at least partially filling the depressions. The mask layer is etched to expose a top surface of the resist layer and leaving at least a portion of the mask layer in the depressions of the resist layer, wherein the mask layer over said top surface of the resist layer is etched at a faster rate than said mask layer in the depressions of the resist layer. Exposed portions of the resist layer are removed to expose portions of the substrate. Exposed portions of the substrate are etched.

Abstract: A system, method and apparatus for manufacturing high density magnetic media is disclosed. A flexible mold having a very low modulus of less than about 4 GPa is made on a rigid support. The mold nano-imprints a resist material on disks for hard disk drives. The flexible mold may comprise a perfluoropolyether with urethane acrylate end groups with a low surface adhesion from which the cured resist is easily released.