Patents by Inventor Tsai Wilman

Tsai Wilman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD FOR FORMING A DIELECTRIC STACK
    Publication number: 20090079016
    Abstract: The present invention provides a method for fabricating a dielectric stack in an integrated circuit comprising the steps of (i) forming a high-k dielectric layer on a semiconductor substrate, (ii) subjecting the semiconductor substrate with the high-k dielectric layer to a nitrogen comprising vapor phase reactant and silicon comprising vapor phase reactant in a plasma-enhanced chemical vapor deposition process (PECVD) or a plasma-enhanced atomic layer chemical vapor deposition (PE ALCVD) process. Furthermore, the present invention provides a dielectric stack in an integrated circuit comprising (i) a high-k dielectric layer comprising at least a high-k material, (ii) a dielectric layer comprising at least silicon and nitrogen; (iii) an intermediate layer disposed between the high-k dielectric layer and the dielectric layer, the intermediate layer comprising the high-k material, silicon, and nitrogen.
    Type: Application
    Filed: November 17, 2008
    Publication date: March 26, 2009
    Applicants: Interuniversitair Microelektronica Centrum vzw, ASM America Inc.
    Inventors: Peijun Jerry Chen, Tsai Wilman, Mathieu Caymax, Jan Willem Maes
  • Method for forming a high-k dielectric stack
    Patent number: 7465626
    Abstract: The present invention provides a method for fabricating a dielectric stack in an integrated circuit comprising the steps of (i) forming a high-k dielectric layer on a semiconductor substrate, (ii) subjecting the semiconductor substrate with the high-k dielectric layer to a nitrogen comprising vapor phase reactant and silicon comprising vapor phase reactant in a plasma-enhanced chemical vapor deposition process (PECVD) or a plasma-enhanced atomic layer chemical vapor deposition (PE ALCVD) process. Furthermore, the present invention provides a dielectric stack in an integrated circuit comprising (i) a high-k dielectric layer comprising at least a high-k material, (ii) a dielectric layer comprising at least silicon and nitrogen; (iii) an intermediate layer disposed between the high-k dielectric layer and the dielectric layer, the intermediate layer comprising the high-k material, silicon, and nitrogen.
    Type: Grant
    Filed: May 25, 2005
    Date of Patent: December 16, 2008
    Assignees: Interuniversitair Microelektronica Centrum vzw, ASM America Inc.
    Inventors: Peijun Jerry Chen, Tsai Wilman, Mathieu Caymax, Jan Willem Maes
  • Method for forming a dielectric stack
    Publication number: 20050269651
    Abstract: The present invention provides a method for fabricating a dielectric stack in an integrated circuit comprising the steps of (i) forming a high-k dielectric layer on a semiconductor substrate, (ii) subjecting the semiconductor substrate with the high-k dielectric layer to a nitrogen comprising vapor phase reactant and silicon comprising vapor phase reactant in a plasma-enhanced chemical vapor deposition process (PECVD) or a plasma-enhanced atomic layer chemical vapor deposition (PE ALCVD) process. Furthermore, the present invention provides a dielectric stack in an integrated circuit comprising (i) a high-k dielectric layer comprising at least a high-k material, (ii) a dielectric layer comprising at least silicon and nitrogen; (iii) an intermediate layer disposed between the high-k dielectric layer and the dielectric layer, the intermediate layer comprising the high-k material, silicon, and nitrogen.
    Type: Application
    Filed: May 25, 2005
    Publication date: December 8, 2005
    Inventors: Peijun Chen, Tsai Wilman, Mathieu Caymax, Jan Maes