Abstract: A semiconductor device and a method of forming the same are provided. The semiconductor device includes a substrate, a gate structure, a dielectric structure and a contact structure. The substrate has source/drain (S/D) regions. The gate structure is on the substrate and between the S/D regions. The dielectric structure covers the gate structure. The contact structure penetrates through the dielectric structure to connect to the S/D region. A lower portion of a sidewall of the contact structure is spaced apart from the dielectric structure by an air gap therebetween, while an upper portion of the sidewall of the contact structure is in contact with the dielectric structure.

Abstract: The present disclosure describes a method for the formation of mirror micro-structures on radiation-sensing regions of image sensor devices. The method includes forming an opening within a front side surface of a substrate; forming a conformal implant layer on bottom and sidewall surfaces of the opening; growing a first epitaxial layer on the bottom and the sidewall surfaces of the opening; depositing a second epitaxial layer on the first epitaxial layer to fill the opening, where the second epitaxial layer forms a radiation-sensing region. The method further includes depositing a stack on exposed surfaces of the second epitaxial layer, where the stack includes alternating pairs of a high-refractive index material layer and a low-refractive index material layer.

Abstract: A method includes forming a pad layer. The pad layer includes a first portion over a first part of a semiconductor substrate, and a second portion over a second part of the semiconductor substrate. The first portion has a first thickness, and the second portion has a second thickness smaller than the first thickness. The semiconductor substrate is then annealed to form a first oxide layer over the first part of the semiconductor substrate, and a second oxide layer over the second part of the semiconductor substrate. The pad layer, the first oxide layer, and the second oxide layer are removed. A semiconductor layer is epitaxially grown over and contacting the first part and the second part of the semiconductor substrate.

Abstract: An integrated circuit includes a photodetector. The photodetector includes one or more dielectric structures positioned in a trench in a semiconductor substrate. The photodetector includes a photosensitive material positioned in the trench and covering the one or more dielectric structures. A dielectric layer covers the photosensitive material. The photosensitive material has an index of refraction that is greater than the indices of refraction of the dielectric structures and the dielectric layer.

Abstract: A light source board includes a substrate; a metal reactive layer disposed on the substrate; a metal conductive layer disposed on the metal reactive layer; a metal alloy layer disposed on the metal conductive layer; and at least one light source disposed on the metal alloy layer. A material of the metal reactive layer is a Sn—Bi type alloy or a Sn—Ag—Cu type alloy, and arrangements of materials of the metal reactive layer and the metal conductive layer are respectively an arrangement of silver paste and copper, an arrangement of silver paste and nickel, an arrangement of silver paste and silver, an arrangement of copper paste and copper, an arrangement of copper paste and nickel, or an arrangement of copper paste and silver.

Abstract: A light source board includes a substrate, a composite circuit layer on the substrate, a first protective layer on the composite circuit layer, and a plurality of light sources on the pad portions, respectively. The substrate has a long side, a first short side, and a second short side. The composite circuit layer includes a first conductive trace layer and a second conductive trace layer stacked on the first conductive trace layer. A conductivity of the second conductive trace layer is higher than a conductivity of the first conductive trace layer. The composite circuit layer has a wire portion formed of at least the first conductive trace layer and a plurality of pad portions each formed of at least the first conductive trace layer and the second conductive trace layer. The wire portion is electrically coupled to the pad portions. The first protective layer exposes the pad portions.

Abstract: A light emitting keyboard includes a bottom board, keyswitches, and a lighting board. The lighting board is disposed between the bottom board and the keyswitches or under the bottom board and includes a flexible substrate having a first hole, multiple-light emitting diodes corresponding to the keyswitches, first and second silver-paste circuit layers formed on upper and lower surfaces of the flexible substrate respectively, a via pillar formed in the first hole to be coupled to the first and second silver-paste circuit layers, a copper layer plated on the first and second silver-paste circuit layers, and a first protection layer coated on the copper layer and having second holes. Each multiple-light emitting diode is disposed on the copper layer plated on the first silver-paste circuit layer through the corresponding second hole to be coupled to the first silver-paste circuit layer.

Abstract: A light source board includes a substrate, a composite circuit layer on the substrate, a first protective layer on the composite circuit layer, and a plurality of light sources on the pad portions, respectively. The substrate has a long side, a first short side, and a second short side. The composite circuit layer includes a first conductive trace layer and a second conductive trace layer stacked on the first conductive trace layer. A conductivity of the second conductive trace layer is higher than a conductivity of the first conductive trace layer. The composite circuit layer has a wire portion formed of at least the first conductive trace layer and a plurality of pad portions each formed of at least the first conductive trace layer and the second conductive trace layer. The wire portion is electrically coupled to the pad portions. The first protective layer exposes the pad portions.

Abstract: A light source board includes a substrate, a composite circuit layer on the substrate, a first protective layer on the composite circuit layer, and a plurality of light sources on the pad portions, respectively. The substrate has a long side, a first short side, and a second short side. The composite circuit layer includes a first conductive trace layer and a second conductive trace layer stacked on the first conductive trace layer. A conductivity of the second conductive trace layer is higher than a conductivity of the first conductive trace layer. The composite circuit layer has a wire portion formed of at least the first conductive trace layer and a plurality of pad portions each formed of at least the first conductive trace layer and the second conductive trace layer. The wire portion is electrically coupled to the pad portions. The first protective layer exposes the pad portions.

Abstract: A light source board includes a substrate; a metal reactive layer disposed on the substrate; a metal conductive layer disposed on the metal reactive layer; a metal alloy layer disposed on the metal conductive layer; and at least one light source disposed on the metal alloy layer. A material of the metal reactive layer is a Sn—Bi type alloy or a Sn—Ag—Cu type alloy, and arrangements of materials of the metal reactive layer and the metal conductive layer are respectively an arrangement of silver paste and copper, an arrangement of silver paste and nickel, an arrangement of silver paste and silver, an arrangement of copper paste and copper, an arrangement of copper paste and nickel, or an arrangement of copper paste and silver.

Abstract: A light source board includes a substrate, a composite circuit layer on the substrate, a first protective layer on the composite circuit layer, and a plurality of light sources on the pad portions, respectively. The substrate has a long side, a first short side, and a second short side. The composite circuit layer includes a first conductive trace layer and a second conductive trace layer stacked on the first conductive trace layer. A conductivity of the second conductive trace layer is higher than a conductivity of the first conductive trace layer. The composite circuit layer has a wire portion formed of at least the first conductive trace layer and a plurality of pad portions each formed of at least the first conductive trace layer and the second conductive trace layer. The wire portion is electrically coupled to the pad portions. The first protective layer exposes the pad portions.

Abstract: A light emitting diode module includes a lead frame, a first light emitting diode chip, a second light emitting diode chip, an encapsulant, and a lens structure. The lead frame has a die-bonding surface and a side wall together defining an accommodating recess. The encapsulant is filled in the accommodating recess, and covers the first and the second light emitting diode chips. The lens structure disposed on the lead frame has a bottom surface, a reflective surface, a first, a second, a third, and a fourth light emitting curved surface. The light emitting curved surfaces are respectively disposed opposite to the bottom surface. An adjacent position among the light emitting curved surfaces is a lowest point nearest to the bottom surface. The first and the second light emitting diode chips are disposed at the projections of the first and the second light emitting curved surface on the die-bonding surface.

Abstract: A light emitting diode module includes a lead frame, a first light emitting diode chip, a second light emitting diode chip, an encapsulant, and a lens structure. The lead frame has a die-bonding surface and a side wall together defining an accommodating recess. The encapsulant is filled in the accommodating recess, and covers the first and the second light emitting diode chips. The lens structure disposed on the lead frame has a bottom surface, a reflective surface, a first, a second, a third, and a fourth light emitting curved surface. The light emitting curved surfaces are respectively disposed opposite to the bottom surface. An adjacent position among the light emitting curved surfaces is a lowest point nearest to the bottom surface. The first and the second light emitting diode chips are disposed at the projections of the first and the second light emitting curved surface on the die-bonding surface.