Abstract: A method of fabricating a semiconductor device is provided. Before covering the isolation structures with a conductive layer, a material layer is formed on the isolation structures. The fluid-like material layer allows the material layer formed between the isolation structures to be thicker than that formed on the top of the isolation structures. The isolation structures are then effectively etched back. The material layer at the top of the isolation structures is removed and a portion of isolation structures is also removed to lower the height of the isolation structures.

Abstract: An auxiliary safety belt has a main body having a U shaped primary strap and two loops formed on two ends of the primary strap for extension of the horizontal portion of the onboard safety belt, a connection belt having a connection loop formed on a distal end thereof to have a portion of the primary strap extended therethrough and a fastening device formed on a proximal end of the connection belt and having a hook to connect to an onboard buckle seat. Therefore, a wrap-around protection to the user is provided should there be a sudden pull to the user riding a vehicle.

Abstract: A method of fabricating a semiconductor device is provided. Before covering the isolation structures with a conductive layer, a material layer is formed on the isolation structures. The fluid-like material layer allows the material layer formed between the isolation structures to be thicker than that formed on the top of the isolation structures. The isolation structures are then effectively etched back. The material layer at the top of the isolation structures is removed and a portion of isolation structures is also removed to lower the height of the isolation structures.

Abstract: A method for fabricating aluminum bonding pads is described. A passivation layer is provided overlying semiconductor device structures in and on a substrate. A bonding pad layer is deposited overlying the passivation layer and within openings in the passivation layer to underlying semiconductor device structures. A masking layer is formed overlying the bonding pad layer wherein the masking layer has a pattern of bonding pads and a dummy pattern wherein a density of the bonding pad pattern and the dummy pattern together is 20% or more. The bonding pad layer is etched away where it is not covered by the masking layer to form bonding pads contacting the semiconductor device structures and dummy pads not contacting the semiconductor device structures wherein the pattern density of 20% or more reduces plasma damage by reducing an etching rate of the bonding pad layer compared to a pattern density of less than 20%.