Abstract: A method of manufacturing light emitting diode packaging lens and packages made by using the method are disclosed in the present invention. By using electrophoretic deposition, one or more layers of phosphors are coated onto one surface of a cup which has a curved portion. The cup is used for the packaging lens. Thickness of phosphor layer can be controlled and distribution of phosphor particles is uniform. Therefore, light emitting diode packages with the lens can be a uniform light source.

Abstract: A method of manufacturing light emitting diode packaging lens and packages made by using the method are disclosed in the present invention. By using electrophoretic deposition, one or more layers of phosphors are coated onto one surface of a cup which has a curved portion. The cup is used for the packaging lens. Thickness of phosphor layer can be controlled and distribution of phosphor particles is uniform. Therefore, light emitting diode packages with the lens can be a uniform light source.

Abstract: A method of manufacturing light emitting diode packaging lens and packages made by using the method are disclosed in the present invention. By using electrophoretic deposition, one or more layers of phosphors are coated onto one surface of a cup which has a curved portion. The cup is used for the packaging lens. Thickness of phosphor layer can be controlled and distribution of phosphor particles is uniform. Therefore, light emitting diode packages with the lens can be a uniform light source.

Abstract: A phase shift mask comprises a glass substrate with a surface and a metal layer. The glass substrate comprises a first phase section, a second phase section and a border section. The metal layer is covered on the glass substrate and defining a pattern comprising a plurality of parallel lines, the first phase section and the second phase section. The terminal of at least one of the lines is not rectangular and a distance between the tips of the lines in the first phase section are defined to be not less than the width of the first phase section.

Abstract: A method of correcting optical proximity effect of contact holes. Corresponding relations between mask critical dimensions (mCDs) and photoresist critical dimensions (pCDs) for each pitch (d) are formed. Correction of each mCD for each combination of pCDs and pitches is determined based on the corresponding relations. The correction is used first to correct each contact hole of a processing mask pattern. The first corrected contact hole of the processing mask pattern is corrected again to a square having the same area as the first corrected contact hole and the same center as the uncorrected contact hole.

Abstract: A method of forming a single sided conductor and a semiconductor device having the same is provided. The method includes providing a substrate having an opening. The opening exposes a sidewall and an opening base surface. A tilted mask layer is formed in the opening. The tilted mask layer exposes the sidewall and a portion of the opening base surface. A dielectric layer is formed on the exposed sidewall and the exposed opening base surface. Then, the tilted mask layer is removed, and a conductive layer is formed over the substrate.

Abstract: A method of correcting optical proximity effect of contact holes. Corresponding relations between mask critical dimensions (mCDs) and photoresist critical dimensions (pCDs) for each pitch (d) are formed. Correction of each mCD for each combination of pCDs and pitches is determined based on the corresponding relations. The correction is used first to correct each contact hole of a processing mask pattern. The first corrected contact hole of the processing mask pattern is corrected again to a square having the same area as the first corrected contact hole and the same center as the uncorrected contact hole.