Abstract: A high-temperature gas pressure measuring method includes a pressure measuring gas housing dividing step for dividing a pressure measuring gas housing into a pressure measuring room and a pressure referring room by a metal diaphragm; a gas introducing step for introducing high temperature gas into the pressure measuring room and introducing a reference pressure gas into the pressure referring room; a displacement measuring step for measuring a displacement of the metal diaphragm, wherein the displacement is caused by pressure difference between the two rooms in pressure measuring gas housing; and a pressure determining step for measuring the pressure of a high-temperature and/or corrosive to-measure pressure gas. The method dispenses with any corrosion-resistant and heat-resistant pressure sensing component and thus cuts costs.

Abstract: An apparatus for performing a selenization and sulfurization process on a glass substrate is introduced. A low-cost, non-toxic selenization and sulfurization process is performed on a large-area glass substrate in a normal-pressure environment with the apparatus to turn element selenium or sulfur into small molecules of high activity at high temperature by pyrolysis or by plasma, especially linear atmospheric pressure plasma. The process is finalized by dispersing the selenium or sulfur molecules uniformly and allowing the glass substrate to undergo reciprocating motion precisely, thereby achieving large-area, uniform selenization and sulfurization of the one-piece glass substrate.

Abstract: A high-temperature gas pressure measuring method includes a pressure measuring gas housing dividing step for dividing a pressure measuring gas housing into a pressure measuring room and a pressure referring room by a metal diaphragm; a gas introducing step for introducing high temperature gas into the pressure measuring room and introducing a reference pressure gas into the pressure referring room; a displacement measuring step for measuring a displacement of the metal diaphragm, wherein the displacement is caused by pressure difference between the two rooms in pressure measuring gas housing; and a pressure determining step for measuring the pressure of a high-temperature and/or corrosive to-measure pressure gas. The method dispenses with any corrosion-resistant and heat-resistant pressure sensing component and thus cuts costs.

Abstract: A selenization/sulfurization process apparatus for use with a single-piece glass substrate is characterized by two chambers for heating up a glass substrate quickly and performing selenization/sulfurization on the glass substrate to not only prevent the glass substrate from staying at a soaking temperature of a softening point for a long period of time but also increase the thin-film selenization/sulfurization temperature according to the needs of the process to thereby reduce the duration of soaking selenization/sulfurization, save energy, and save time. The glass substrate undergoes reciprocating motion in the chambers to not only attain uniform temperature throughout the glass substrate but also distribute a selenization/sulfurization gas across the glass substrate uniformly during the selenization/sulfurization operation. The recycled liquid selenium/sulfur and inert gas are reusable to thereby reduce material costs.

Abstract: The present disclosure relates to a vapor deposition equipment for fabricating CIGS film, in which a Se vapor deposition module, a In/Ga linear vapor deposition module and a Cu linear vapor deposition module are integrated in an identical vacuum chamber, used for fabricating the CIGS absorber layers on a flexible solar cell substrate by an automatic manufacturing process in accordance with an unwinding module, a heating device, a heat reducing device, a speed-controlling roller module, a cooling module, and a winding module. Moreover, in the present disclosure, a film thickness measuring module is used for measures the thickness of the CIGS chalcopyrite crystalline film on the flexible solar cell substrate, and the thickness data of the CIGS chalcopyrite crystalline film would be transmitted to the electromechanical control module for being references of the parameter modulation of following fabricating process, and such way is so-called APC (Advanced Process Control) system.

Abstract: The present invention relates to a vapor deposition equipment for fabricating CIGS film, in which a Se vapor deposition module, a In/Ga/In linear vapor deposition module and a Cu linear vapor deposition module are integrated in an identical vacuum chamber, used for fabricating the CIGS absorber layers on a flexible solar cell substrate by an automatic manufacturing process in accordance with an unwinding module, a heating device, a heat reducing device, a speed-controlling roller module, a cooling module, and a winding module. Moreover, in the present invention, a film thickness measuring module is used for measures the thickness of the CIGS chalcopyrite crystalline film on the flexible solar cell substrate, and the thickness data of the CIGS chalcopyrite crystalline film would be transmitted to the electromechanical control module for being references of the parameter modulation of following fabricating process, and such way is so-called APC (Advanced Process Control) system.