Abstract: A method of fabricating a semiconductor device is provided. First, a semiconductor substrate and a dielectric layer positioned on the semiconductor substrate are prepared. Subsequently, the dielectric layer is etched to form a hole structure in the dielectric layer. Afterward, a degas process is performed. An ultraviolet (UV) treatment is carried out to the semiconductor substrate in the degas process so as to expel at least a gas contained in the dielectric layer. Next, a barrier layer is formed on the sidewall and on the bottom of the hole structure. Furthermore, the hole structure is filled with a conductive material. Since the UV treatment can degas the dielectric layer efficiently, the formed semiconductor device can have a fine and stable structure.

Abstract: A CMP apparatus has a CMP unit for polishing a dielectric layer, a thickness monitoring unit for monitoring a thickness index of the polished dielectric layer, and a thickness correcting unit for further reducing the thickness of the polished dielectric layer in accordance with the thickness index by etching. The CMP unit, the thickness monitoring unit, and the thickness correcting unit are in-situ installed.

Abstract: A semiconductor process apparatus and a SMIF pod used therein. The semiconductor process apparatus comprises a first support, a second support, and a SMIF pod. The first support includes a first pin and a first rotating device, and the first pin is rotated by the first rotating device in a first direction. The second support includes a second pin and a second rotating device, and the second pin is rotated by the second rotating device in a second direction opposite the first direction. The SMIF pod includes a base and a cover. The base includes a slot and an engaging member, and the cover defines a hole for the engaging member to be inserted into. The first pin is inserted into the slot when the SMIF pod is disposed on the first support, and the slot is rotated by the first pin in the first direction so that the engaging member is withdrawn from the hole.

Abstract: The present invention provides a chemical mechanical polishing device for polishing a wafer. The chemical mechanical polishing device comprises a platen, an outer polishing pad, an inner polishing pad, a slurry providing system, and a rotating carrier. The inner polishing pad is located on the platen. The outer polishing pad is mounted on the outer polishing pad and peeled off when abraded from overuse. The slurry providing system provides a slurry to the surface of the outer polishing pad. The rotating carrier holds the wafer and contacts the surface of the wafer with the slurry and the polishing pad to carry out the chemical mechanical polishing process.

Abstract: The present invention provides a chemical mechanical polishing apparatus for polishing a wafer. The chemical mechanical polishing apparatus comprises a platen, a polishing pad, a transparent element (transparent window), a slurry providing system, and a rotating carrier. The platen comprises a light source for projecting a light and a light detector for detecting the light reflected by the wafer. The polishing pad has a first opening on the platen. The transparent element is detachably located on the first opening to admit light. The slurry providing system provides slurry to the surface of the polishing pad. The rotating carrier holds the wafer and contacts the surface of the wafer with the slurry and the polishing pad to carry out the chemical mechanical polishing process.

Abstract: A method of depositing thin films has steps of: providing a physical vapor deposition (PVD) vacuum reactor to deposit a first layer; providing at least a metal-organic chemical vapor deposition (MOCVD) vacuum reactor to deposit a second layer on the first layer; and providing a radio frequency (RF) plasma treatment reactor to perform plasma treatment on the second layer.

Abstract: An apparatus for chemical-mechanical polishing is disclosed. The apparatus includes the following elements. A pump is used for forcing slurry to be flown inward to receive the slurry from a supply reservoir. A first pipe having a first end, is coupled to an outlet of the forcing means through which the forced slurry flows therein. A megasonic generator coupled in approximately midway of the first pipe and surrounded the first pipe, is used for generating megasonic wave. A second pipe, coupled to a second end of the first pipe, is used for conducting the slurry and then exhausting the slurry through an outlet of the second pipe. A polishing pad, onto that the slurry from the second pipe is dropped, is fixed on a polishing table. The polishing table underlying the polishing pad is used for supporting the polishing pad. A wafer holder, located above the polishing pad, is used for fixing the wafer to the wafer holder while in rotational movement with respect to the polishing pad.

Abstract: A method for improving the uniformity of wafer-to-wafer film thicknesses. Before depositing films, shower heads in a PECVD system is heated to production temperature to make the entire system (including the shower heads) reach a stable temperature in coordination with heating of a heater block. Subsequently, a gas source, output via the shower heads, is provided, and then a plasma of the gas source is generated to form a film on the wafer due to the temperatures of the shower heads remain constant during wafers deposition. Therefore, the problem of the uneven thicknesses of films among wafers is resolved. Moreover, if the heating of the shower heads by use of a plasma (which can also be used to heat the heater block) and the heater block is concurrently performed after the preventive maintenance (PM) or open chamber cleaning of the PECVD system, the heating time of the heater block can be further shortened.

Abstract: A method for planarizing a damascence structure, comprises using two polishing procedure to remove the redundant metal layer. The method comprises depositing a dielectric layer over a wafer. A photolithography and etching procedure is then performed to form trenchs on the dielectric layer. Then, a metal layer is deposited over the dielectric layer and fills the trenchs. Thereafter, a electrical polishing and chemical mechanical polishing method is performed to remove metal layer until the dielectric layer is exposed. The invention is capable of reducing the dishing and erosion effects occurred on the metal layer.

Abstract: A slurry providing system, located between a main slurry providing system and a CMP machine, includes a providing barrel, which can either be used as a buffer tank to provide slurry to the CMP machine with interruption, or as an independent backup tank for store slurry. The providing barrel also includes an impeller to stir slurry to prevent slurry deposition, and a liquid level sensor to monitor slurry level. The slurry providing system further includes a pump to continuously provide slurry from the providing barrel when the main slurry providing system is down. There is a pressure-regulating valve between the slurry providing system and the CMP machine.

Abstract: A method for depositing dielectric material into gaps between wiring lines in the formation of a semiconductor device includes the deposition of dielectric layers using high density plasma chemical vapor deposition (HDPCVD). A first HDPCVD step is carried out to form a first dielectric layer over the wiring lines and into the gaps between wiring lines. A PECVD step is carried out to deposit dielectric material over the first dielectric layer and within and to define a opening in the gap. A second HDPCVD step is carried out and the opening defined by the PECVD step is capped by a third dielectric layer. The method allows air-filled voids to be formed between adjacent metal wiring lines in a highly controlled manner which allows selection of the shape of the voids and precise location of the top of the voids. In addition, the voids are sealed by a denser and more durable material than is typical.

Abstract: A chemical-mechanical polishing station for polishing wafers. The polishing station comprises a slurry supplier, a polishing pad capable of collecting the slurry, and a polishing head capable of rotating a wafer and lowering the wafer onto the polishing pad in contact with the polishing pad and the slurry during a polishing session. The polishing head further includes a retaining ring for positioning the wafer. The retaining ring houses a light-emitting device capable of shining a beam of light onto the slurry and a light sensor for picking up the beam of light reflected back from the slurry. The exact polishing end-point can be decided by analyzing signals obtained from the light sensor.