Patents by Inventor Tsang-Lang Lin

Tsang-Lang Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8709969
    Abstract: RuCore—Ptshell nanocatalysts with 1˜3 atomic layers of Pt-shell were developed for enhancing the catalytic activities. Uniform atomic layers of Pt were successfully deposited on the core nanoparticles with high precision. Using such nanocatalysts as the cathode of the dye-sensitized solar cell (DSSC), the efficiency of DSSC can be significantly increased. For direct methanol fuel cell (DMFC) applications, much higher performance can also be achieved by using such RuCore—Ptshell nanocatalysts and the DMFC can be operated at room temperature without the need to raise the cell temperature to above room temperature (such as 80° C.).
    Type: Grant
    Filed: June 30, 2011
    Date of Patent: April 29, 2014
    Assignee: National Tsing Hua University
    Inventors: Tsang-Lang Lin, Tsan-Yao Chen, Chiun-Yi Wu
  • Publication number: 20120088651
    Abstract: RuCore—Ptshell nanocatalysts with 1˜3 atomic layers of Pt-shell were developed for enhancing the catalytic activities. Uniform atomic layers of Pt were successfully deposited on the core nanoparticles with high precision. Using such nanocatalysts as the cathode of the dye-sensitized solar cell (DSSC), the efficiency of DSSC can be significantly increased. For direct methanol fuel cell (DMFC) applications, much higher performance can also be achieved by using such RuCore—Ptshell nanocatalysts and the DMFC can be operated at room temperature without the need to raise the cell temperature to above room temperature (such as 80° C.).
    Type: Application
    Filed: June 30, 2011
    Publication date: April 12, 2012
    Applicant: NATIONAL TSING HUA UNIVERSITY
    Inventors: Tsang-Lang LIN, Tsan-Yao Chen, Chiun-Yi Wu
  • Patent number: 6150763
    Abstract: This invention relates to an inductively-coupled high density plasma producing apparatus and a plasma processing equipment having the apparatus. The plasma processing equipment consists of a shape-adjustable coil (antenna), a RF power generator, an impedance matching network, a plasma chamber, a gas supply system, and a vacuum system. The gases for producing plasma are fed into the plasma chamber. The RF power is fed into the coil to produce plasma in the plasma chamber. This invention is characterized by the provision of a shape-adjustable coil, which is used to shape the RF power profile in the plasma chamber such that the plasma density profile (uniformity) can be controlled.
    Type: Grant
    Filed: March 11, 1999
    Date of Patent: November 21, 2000
    Assignee: Chuen-Horng Tsai
    Inventors: Keh-Chyang Leou, Chai-Hao Chang, Szu-Che Tsai, Tsang-Lang Lin, Chuen-Horng Tsai