Abstract: An optical film includes a grid layer having a first surface, a second surface, light-shading portions, and light-transmitting portions. The light-shading portions and the light-transmitting portions are located between the first surface and the second surface, and the light-shading portions and the light-transmitting portions are alternately arranged along the first surface. Each light-shading portion has a third surface, a fourth surface, a fifth surface, a sixth surface, and a seventh surface. An angle between the fourth and third surfaces is A1, an angle between the fifth and third surfaces is A2, an angle between the sixth and second surfaces is A3, and an angle between the seventh and second surfaces is A4. Wherein 85°<A1?90°, 85°<A2?90°, 0°<A3<85°, 0°<A4<85°, A2?A4, and A1?A3. A display device is also provided.

Abstract: A method for dynamically allocating radio frequency (RF) exposure across multiple RF groups including a first RF group and a second RF group includes: estimating RF exposure of the first RF group according to at least one message of the first RF group, in order to generate estimated RF exposure; calculating RF exposure of the second RF group according to at least one message of the second RF group, the estimated RF exposure, and one or more equations, in order to generate calculated RF exposure, wherein the one or more equations are associated with a predetermined regulation; and determining a TX power limit corresponding to the first RF group and a TX power limit corresponding to the second RF group according to the estimated RF exposure and the calculated RF exposure, respectively.

Abstract: A method for performing mapping between one or more radio modules and one or more radiofrequency (RF) groups includes: separating the one or more radio modules into the one or more RF groups according to one or more messages, wherein the one or more messages comprise a previous TX power ratio, a TX power ratio margin, one or more weighting information, one or more TX performance indices, one or more receiving (RX) performance indices, one or more configurations, or one or more usage scenarios; accumulating RF exposure of the one or more radio modules to at least one RF group among the one or more RF groups; and determining at least one transmitting (TX) power limit corresponding to the at least one RF group according to accumulated RF exposure of the at least one RF group.

Abstract: A semiconductor device includes a substrate, a first active structure, a second active structure, an epitaxy and a conductive via. The first active structure is formed on the substrate and including a plurality of first sheets and a plurality of first spacers. The second active structure is disposed formed on the substrate and adjacent to the first active structure, wherein the second active structure includes a plurality of second sheets and a plurality of second spacers, the second sheets and the second spacers are stacked to each other, and there is trench between the first active structure and the second active structure. The epitaxy is formed within the trench. The conductive via is connected with the epitaxy. The semiconductor device further has a planarized surface including the first active structure, the second active structure and the conductive via, and the planarized surface has a flatness less than 10 nm.

Abstract: An electronic system including an image sensor, a face detection engine, an eye detection engine and an eye protection engine is provided. The image sensor captures an image. The face detection engine recognizes a user face in the image. The eye detection engine recognizes user eyes in the image. The eye protection engine turns off a display device when the user eyes are recognized in the image but the user face is not recognized in the image.

Abstract: A device may detect a semiconductor wafer to be transferred from a source wafer carrier to a target wafer carrier, and may cause a light source to illuminate the semiconductor wafer. The device may cause a camera to capture images of the semiconductor wafer after the light source illuminates the semiconductor wafer, and may perform image recognition of the images of the semiconductor wafer to determine whether an edge of the semiconductor wafer is damaged. The device may cause the semiconductor wafer to be provided to the source wafer carrier when the edge of the semiconductor wafer is determined to be damaged, and may cause the semiconductor wafer to be provided to the target wafer carrier when the edge of the semiconductor wafer is determined to be undamaged.

Abstract: A semiconductor package includes a redistribution structure, a supporting layer, a semiconductor device, and a transition waveguide structure. The redistribution structure includes a plurality of connectors. The supporting layer is formed over the redistribution structure and disposed beside and between the plurality of connectors. The semiconductor device is disposed on the supporting layer and bonded to the plurality of connectors, wherein the semiconductor device includes a device waveguide. The transition waveguide structure is disposed on the supporting layer adjacent to the semiconductor device, wherein the transition waveguide structure is optically coupled to the device waveguide.

Abstract: A display device and a backlight control method of the display device are provided. When a duration of an image occlusion period is shorter than a preset duration, a backlight driving circuit is controlled to respectively provide a first pulse current and a second pulse current in a first light emitting period and a second light emitting period in each frame period, so as to drive a backlight unit to provide a first backlight and a second backlight. Here, the first pulse current is greater than the second pulse current.

Abstract: A lifting device is provided. The lifting device includes a stationary member, a lifting member, positioning bases, reels, and springs. The lifting member is slidably coupled to the stationary member. The lifting member is fixed to a back portion of the display. The positioning bases are disposed on the stationary member and the lifting member. The reels are pivoted on the positioning bases. The springs are wound around the reels and connected to the other of the stationary member and the lifting member relative to the positioning bases. When the display or the lifting member is subjected to an applied force toward a sliding direction, the lifting member slides toward the sliding direction relative to the stationary member. The springs stretched by the lifting member generate an elastic force, so that the lifting member and the display no longer subjected to a force stay at a height position after sliding.

Abstract: The present invention discloses an in-line electron beam inspection method for semiconductor processes, an in-line electron beam inspection equipment having a cold field emitter with a nanometer-scale protrusion structure applied to semiconductor processes and a manufacture method thereof. The in-line electron beam inspection equipment having a cold field emitter with a nanometer-scale protrusion structure comprises a tip end part and a nanometer-scale protrusion structure. The tip end part is formed in a front end of an emitter. The nanometer-scale protrusion structure is formed on a surface of the tip end part. The nanometer-scale protrusion structure is an atomic stacking structure. The cold field emitter is operated in the vacuum environment below 3×10?9 millibar.

Abstract: A wavelength conversion element including a substrate, a blocking wall structure layer, and a wavelength conversion layer is provided. The blocking wall structure layer is disposed on a surface of the substrate and defines multiple microgrooves. Reflectivity of the blocking wall structure layer is in a range of 1% to 99%. The wavelength conversion layer is disposed in the microgrooves and includes multiple wavelength conversion particles. A height of the blocking wall structure layer along a normal direction of the surface of the substrate is greater than a height of the wavelength conversion layer along the normal direction of the surface of the substrate. A backlight module adopting the wavelength conversion element is also provided.

Abstract: A display device including a display module and an illuminating module is disclosed. The illuminating module is disposed on a display surface of the display module, and includes a light source, a light guide plate, and an optical film. The optical film is disposed between the display module and the light guide plate, and includes a basal layer and a microstructure layer. The microstructure layer is disposed between a surface of the basal layer and the light guide plate, and includes multiple microstructures. Each microstructure includes a first surface and a second surface. A first angle is between the first surface and a datum plane. A second angle is between the second surface and the datum plane. The first angle and the second angle are greater than or equal to 40 degrees and less than or equal to 90 degrees.

Abstract: The present disclosure provides an image processing circuit including a neural network processor, a background processing circuit and a blending circuit. The neural network processor is configured to process input image data to determine whether the input image data has a predetermined object so as to generate to heat map. The background processing circuit blurs the input image data to generate blurred image data. The blending circuit blends the input image data and the blurred image data according to the heat map to generate output image data.

Abstract: Provided are a silicon carbide crystal growth device and a quality control method. The device includes: an annealing unit, a crystal growth unit, an atmosphere control unit, and a transport system; the atmosphere control unit provides a gas environment with low water, oxygen and nitrogen; the transport system transports a plurality of target objects after high-temperature purification by the annealing unit to the atmosphere control unit; after assembling silicon carbide seed crystal and silicon carbide powder in a graphite crucible and covering with thermal insulation material to form a container inside the atmosphere control unit, the transport system transports the container to the crystal growth unit. The method uses a weighing system in a chamber of the crystal growth unit to detect a weight change of silicon carbide seed crystal and silicon carbide powder during a crystal growth process through a plurality of weight sensors of the weighing system.

Abstract: The present disclosure relates generally to devices and systems for performing automated multiplex assays, and methods of using such devices and systems. In some embodiments, the devices and systems comprise a magnetic module that simplifies and automates processing of encoded microcarriers for molecular and immunoassays.

Abstract: An electronic system including an image sensor, a face detection engine, an eye detection engine and an eye protection engine is provided. The image sensor captures an image. The face detection engine recognizes a user face in the image. The eye detection engine recognizes user eyes in the image. The eye protection engine turns off a display device when the user eyes are recognized in the image but the user face is not recognized in the image.

Abstract: An optical film includes a grid layer having a first surface, a second surface, light-shading portions, and light-transmitting portions. The light-shading portions and the light-transmitting portions are located between the first surface and the second surface, and the light-shading portions and the light-transmitting portions are alternately arranged along the first surface. Each light-shading portion has a third surface, a fourth surface, a fifth surface, a sixth surface, and a seventh surface. An angle between the fourth and third surfaces is A1, an angle between the fifth and third surfaces is A2, an angle between the sixth and second surfaces is A3, and an angle between the seventh and second surfaces is A4. Wherein 85°<A1?90°, 85°<A2?90°, 0°<A3<85°, 0°<A4<85°, A2?A4, and A1?A3. A display device is also provided.

Abstract: A structure of semiconductor device is provided, including a first circuit structure, formed on a first substrate. A first test pad is disposed on the first substrate. A second circuit structure is formed on a second substrate. A second test pad is disposed on the second substrate. A first bonding pad of the first circuit structure is bonded to a second bonding pad of the second circuit structure. One of the first test pad and the second test pad is an inner pad while another one of the first test pad and the second test pad is an outer pad, wherein the outer pad surrounds the inner pad.

Abstract: The present invention relates to a fluorescent polymer cast on the surface of wells of a plate and a plate comprising the fluorescent polymer. The plate is used in a method for calibrating read-out values of plate readers. The method for calibrating the plate readers can effectively reduce the deviation of read-out values among different plate readers.

Abstract: A semiconductor structure includes an interposer substrate, an electronic device formed in a device region of the interposer substrate, a guard ring formed in the interposer substrate and surrounding the device region, a first redistribution layer on an upper surface of the interposer substrate and covering the device region and the guard ring, and a chip disposed on the first redistribution layer and overlapping the device region.