Abstract: A semiconductor device and method for manufacturing the same are provided. The method includes providing a first substrate. The method also includes forming a first metal layer on the first substrate. The first metal layer includes a first metal material. The method further includes treating a first surface of the first metal layer with a solution including an ion of a second metal material. In addition, the method includes forming a plurality of metal particles including the second metal material on a portion of the first surface of the first metal layer.

Abstract: A semiconductor device and method for manufacturing the same are provided. The method includes providing a first substrate. The method also includes forming a first metal layer on the first substrate. The first metal layer includes a first metal material. The method further includes treating a first surface of the first metal layer with a solution including an ion of a second metal material. In addition, the method includes forming a plurality of metal particles including the second metal material on a portion of the first surface of the first metal layer.

Abstract: The present disclosure relates to a semiconductor device package including a substrate, a semiconductor device and an underfill. The substrate has a first surface and a second surface angled with respect to the first surface. The semiconductor device is mounted on the first surface of the substrate and has a first surface facing the first surface of the substrate and a second surface angled with respect to the first surface of the substrate. The underfill is disposed between the first surface of the semiconductor device and the first surface of the substrate. The second surface of the substrate is located in the substrate and external to a vertical projection of the semiconductor device on the first surface of the substrate.

Abstract: A semiconductor device and method for manufacturing the same are provided. The method includes providing a first substrate. The method also includes forming a first metal layer on the first substrate. The first metal layer includes a first metal material. The method further includes treating a first surface of the first metal layer with a solution including an ion of a second metal material. In addition, the method includes forming a plurality of metal particles including the second metal material on a portion of the first surface of the first metal layer.

Abstract: The present disclosure relates to a semiconductor device package including a substrate, a semiconductor device and an underfill. The substrate has a first surface and a second surface angled with respect to the first surface. The semiconductor device is mounted on the first surface of the substrate and has a first surface facing the first surface of the substrate and a second surface angled with respect to the first surface of the substrate. The underfill is disposed between the first surface of the semiconductor device and the first surface of the substrate. The second surface of the substrate is located in the substrate and external to a vertical projection of the semiconductor device on the first surface of the substrate.

Abstract: The present disclosure relates to a semiconductor device package including a substrate, a semiconductor device and an underfill. The substrate has a first surface and a second surface angled with respect to the first surface. The semiconductor device is mounted on the first surface of the substrate and has a first surface facing the first surface of the substrate and a second surface angled with respect to the first surface of the substrate. The underfill is disposed between the first surface of the semiconductor device and the first surface of the substrate. The second surface of the substrate is located in the substrate and external to a vertical projection of the semiconductor device on the first surface of the substrate.

Abstract: A spent sulfuric acid catalyst from an alkylation unit is regenerated via a paired oxidation electrolysis, wherein active intermediates are generated via both anodic oxidation and cathodic reduction without adding an additional organic peroxide during the electrolysis. The organic impurities in the spent sulfuric acid catalyst are decomposed by the active intermediates, and removed therefrom via evaporation.

Abstract: A semiconductor device package includes a substrate, a semiconductor device, and an underfill. The substrate includes a top surface defining a mounting area, and a barrier section on the top surface and adjacent to the mounting area. The semiconductor device is mounted on the mounting area of the substrate. The underfill is disposed between the semiconductor device and the mounting area and the barrier section of the substrate. A contact angle between a surface of the underfill and the barrier section is greater than or equal to about 90 degrees.

Abstract: A spent sulfuric acid catalyst from an alkylation unit is regenerated via a paired oxidation electrolysis, wherein active intermediates are generated via both anodic oxidation and cathodic reduction without adding an additional organic peroxide during the electrolysis. The organic impurities in the spent sulfuric acid catalyst are decomposed by the active intermediates, and removed therefrom via evaporation.

Abstract: The present disclosure relates to a semiconductor device package comprising a substrate, a semiconductor device, and a underfill. The substrate includes a top surface defining a mounting area, and a barrier section on the top surface and adjacent to the mounting area. The semiconductor device is mounted on the mounting area of the substrate. The underfill is disposed between the semiconductor device and the mounting area and the barrier section of the substrate. A contact angle between a surface of the underfill and the barrier section is greater than or equal to about 90 degrees.

Abstract: The present disclosure relates to a semiconductor device package including a substrate, a semiconductor device and an underfill. The substrate has a first surface and a second surface angled with respect to the first surface. The semiconductor device is mounted on the first surface of the substrate and has a first surface facing the first surface of the substrate and a second surface angled with respect to the first surface of the substrate. The underfill is disposed between the first surface of the semiconductor device and the first surface of the substrate. The second surface of the substrate is located in the substrate and external to a vertical projection of the semiconductor device on the first surface of the substrate.

Abstract: A method for regenerating a spent sulfuric acid catalyst and recovering hydrocarbons from a spent sulfuric acid catalyst from alkylation of olefins and alkanes by using a hydrophobic supported liquid membrane is provided.

Abstract: The invention relates to an oxygenate additive for an internal combustion engine fuel, comprising glycerol dimethyl ethers (GDMEs) and glycerol trimethyl ether (GTME); a fuel composition comprising the oxygenate additive; an improved process for methylation of glycerol with dimethyl sulfate to produce highly methylated glycerol ethers; and uses of ethers produced from the process for diesel fuel, for gasoline and for aviation turbine fuel, or as a green solvent or as an antifreezer.

Abstract: The present invention relates to an electrochemical gaseous chlorine sensor. The sensor is characterized by covering one of the electrodes with a polymer material having a sensing activity and conductivity. The sensor includes: an ionic permeable film for separating a measuring chamber and a reference chamber, the ionic permeable film being a solid polymer electrolyte; a first electrode and a second electrode formed on two opposite sides of the ionic permeable film, the first electrode and the second electrode being conductors with catalytic activities; and a conductive polymer film formed on the first electrode. A fixed voltage ranging from −0.3 to 1.3V, preferably 0 to 0.2V, between said first electrode and said second electrode is maintained with a device, when the sensor is in use.

Abstract: This invention discloses an integrated process of alkylation of olefins and regeneration of spent sulfuric acid. The alkylation of olefins may be replaced by nitration of toluene or by chlor-alkali process. The sulfuric acid is used as a catalyst or a absorbent, and the spent sulfuric acid is regenerated in situ and is recycled in the alkylation of olefins, nitration of toluene or chlor-alkali processes.

Abstract: A method for synthesizing quinone from an aromatic compound is developed that employs a paired electro-oxidation method and a undivided electrochemical cell. The electrolyte solution is a combination of an aromatic solution (aqueous or nonaqueous) and a redox mediator solution, which can be V.sup.5+ /V.sup.4+, Fe.sup.3+ /Fe.sup.2+, or Cu.sup.2+ /Cu.sup.+, in an undivided electrochemical cell. The electrolyte reaction is conducted by bubbling oxygen into the bottom of the cathode, then the oxygen is reduced to hydrogen peroxide (H.sub.2 O.sub.2). Simultaneously, at the anode surface, lower valence state ions can be oxidized to higher valence states. Hydrogen peroxide then oxidizes the rest of the low valence state ions to form high valence ions, OH-free radicals, and combinations of both. These ions and radicals then react with the aromatic compound in the solution and form the resultant product, quinone.