Patents by Inventor Tse-Hsien Wu

Tse-Hsien Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Through silicon via and method of manufacturing the same
    Patent number: 11715669
    Abstract: A method of manufacturing a through silicon via (TSV) is provided in the present invention, including steps of forming a TSV sacrificial structure in a substrate, wherein the TSV sacrificial structure contacts a metal interconnect on the front side of the substrate, performing a backside thinning process to expose the TSV sacrificial structure from the back side of the substrate, removing the TSV sacrificial structure to form a through silicon hole, and filling the through silicon hole with conductive material to form a TSV.
    Type: Grant
    Filed: August 4, 2021
    Date of Patent: August 1, 2023
    Assignee: Powerchip Semiconductor Manufacturing Corporation
    Inventors: Shih-Ping Lee, Tse-Hsien Wu, Pin-Chieh Huang, Yu-Hsiang Chien, Yeh-Yu Chiang
  • THROUGH SILICON VIA AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20220130725
    Abstract: A method of manufacturing a through silicon via (TSV) is provided in the present invention, including steps of forming a TSV sacrificial structure in a substrate, wherein the TSV sacrificial structure contacts a metal interconnect on the front side of the substrate, performing a backside thinning process to expose the TSV sacrificial structure from the back side of the substrate, removing the TSV sacrificial structure to form a through silicon hole, and filling the through silicon hole with conductive material to form a TSV.
    Type: Application
    Filed: August 4, 2021
    Publication date: April 28, 2022
    Applicant: Powerchip Semiconductor Manufacturing Corporation
    Inventors: Shih-Ping Lee, Tse-Hsien Wu, Pin-Chieh Huang, Yu-Hsiang Chien, Yeh-Yu Chiang