Abstract: This specification discloses a gallium nitride-based III-V Group compound semiconductor device. Its p-type electrode consists of a semiconductor oxide film and a transparent conductive film. With the good ohmic contact between the former film and the p-type semiconductor layer, the latter one can homogeneously distribute the current to the surface of the whole p-type semiconductor layer. Since both the semiconductor oxide film and the transparent conductive film can be easily penetrated by light, the p-type electrode is a transparent structure with a transparency over 75% within the visible light range. Therefore, this invention can greatly increase the efficiency of the light-emitting devices. Moreover, the manufacturing procedure of this invention being simple and reliable, the yield and device reliability can thus be greatly raised. The production cost is lowered with simplified manufacturing steps at the same time.

Abstract: A method of fabricating a ridge waveguide semiconductor light-emitting device is provided in which an oxide semiconductor having a heavy carrier concentration serves as the interface of the metal layer and the epitaxial layer to make the current flow through the ridge waveguide. This invention forms an oxide semiconductor having a heavy carrier concentration thereon after finishing the basic structure of a ridge waveguide semiconductor light-emitting device, then forms a metal layer to conduct current. Since the carrier concentration at the surface of the ridge waveguide is higher than that at the inner portion, the current primarily flows through the interface of the oxide semiconductor having a heavy carrier concentration and the vertex of the ridge waveguide. Thus the current is restricted to only flow through the vertex of the ridge waveguide.