Abstract: The present invention relates to a device comprising physical properties controlled by a microstructure and a method of manufacturing the same. The present invention discloses a base layer having a patterned surface; and a two-dimensional structure layer formed on the patterned surface of the base layer, the two-dimensional structure layer extending on and in compliance to topography of the patterned surface of the base layer, such that change of physical properties of the two-dimensional structure layer conforms to the stress generated along the topography.

Abstract: The present invention relates to a device comprising physical properties controlled by a microstructure and a method of manufacturing the same. The present invention discloses a base layer having a patterned surface; and a two-dimensional structure layer formed on the patterned surface of the base layer, the two-dimensional structure layer extending on and in compliance to topography of the patterned surface of the base layer, such that change of physical properties of the two-dimensional structure layer conforms to the stress generated along the topography.

Abstract: An all-electric spin field effect transistor is disclosed, which includes an injection node, injecting an electron in a first spin direction; a detection node, detecting the electron in the first spin direction; and a gate, disposed between the injection node and the detection node such that the electron changes from the first spin direction to a second spin direction by carrying out precession; if the second spin direction is parallel to the first spin direction, the electron is able to pass through the detection node; if the second spin direction is antiparallel to the first spin direction, the electron is unable to pass through the detection node.

Abstract: An all-electric spin field effect transistor is disclosed, which includes an injection node, injecting an electron in a first spin direction; a detection node, detecting the electron in the first spin direction; and a gate, disposed between the injection node and the detection node such that the electron changes from the first spin direction to a second spin direction by carrying out precession; if the second spin direction is parallel to the first spin direction, the electron is able to pass through the detection node; if the second spin direction is antiparallel to the first spin direction, the electron is unable to pass through the detection node.

Abstract: A brake arm assembly for caliper brakes includes a brake block having a post, a seat formed with a pair of lugs at one side thereof and an elongated slot configured to receive the post, each of the lugs having a through hole, an arm having an intermediate portion having two opposite sides formed with two recesses configured to receive the two lugs, the arm having a front side formed with two threaded holes in each of which is fitted a compressed spring, the intermediate portion having an elongated opening between the two threaded holes, two sleeves fitted in two sides of the elongated opening, two first bolts turned through the seat to engage with the two threaded holes of the arm, and a second bolt extending through the through hole of the seat, the sleeves and the elongated opening.