Abstract: A semiconductor element is provided, including: a substrate having a plurality of first conductive through holes and second conductive through holes formed therein; a redistribution layer formed on the substrate and having a plurality of conductive pads electrically connected to the first conductive through holes; and a metal layer formed on the redistribution layer and electrically connected to the second conductive through holes. The metal layer further has a plurality of openings for the conductive pads of the redistribution layer to be exposed from the openings without electrically connecting the first metal layer. As such, the metal layer and the second conductive through holes form a shielding structure that can prevent passage of electromagnetic waves into or out of the redistribution layer or side surfaces of the semiconductor element, thereby effectively shield electromagnetic interference.

Abstract: An electrical interconnection structure includes: a signal transmission structure having a first through silicon via (TSV) and signal circuits connected to two opposite ends of the first TSV, respectively; and a grounding structure having a second TSV and grounding layers connected to two opposite ends of the second TSV, respectively. The grounding layers surround the signal circuits along the pathways thereof such that the ends of the first TSV are surrounded by the grounding layers with gaps therebetween. By changing the gaps between the grounding layers and the ends of the first TSV, the capacitance between the grounding layers and the signal circuits is adjusted so as to regulate the impedance therebetween.