Abstract: A method for manufacturing a thin film transistor (TFT) includes the steps of: providing a substrate (1); and forming a TFT circuit on the substrate using laser-induced chemical vapor deposition (LCVD). Detailedly, the method includes providing the bare substrate, cleaning the substrate with cleaning liquid, and successively forming a gate electrode (2), a gate oxide layer (3), a source electrode (5), and a drain electrode (6) on the substrate by LCVD, thus obtaining the thin film transistor. The forming steps may be controlled by one or more computer programs. The LCVD can be pyrolytic LCVD, photolytic LCVD, or photophysical LCVD. The method is simple and inexpensive.

Abstract: A device (2) for inspecting a matrix substrate (26) includes a light source (22), an electro-optical device (20) determining whether light beams penetrate through or not, a photodetector (23) positioned at one side of the electro-optical device and a host computer (24) connected with the photodetector. A matrix substrate is positioned between the electro-optical device and the light source. The device is used to receive image data, and then the image data is compared with the predefined data to determine whether defects on the matrix substrate exist. Efficiency of inspection can be significantly improved. A related method is also provided.

Abstract: A method for manufacturing a thin film transistor (TFT) includes the steps of: providing a substrate (1); and forming a TFT circuit on the substrate using laser-induced chemical vapor deposition (LCVD). Detailedly, the method includes providing the bare substrate, cleaning the substrate with cleaning liquid, and successively forming a gate electrode (2), a gate oxide layer (3), a source electrode (5), and a drain electrode (6) on the substrate by LCVD, thus obtaining the thin film transistor. The forming steps may be controlled by one or more computer programs. The LCVD can be pyrolytic LCVD, photolytic LCVD, or photophysical LCVD. The method is simple and inexpensive.