Abstract: Systems and methods for temperature control of semiconductor wafers are provided. An exemplary embodiment of semiconductor wafer is held by an electrostatic chuck. An exemplary embodiment of system includes a cooling apparatus connecting the electrostatic chuck. The cooling apparatus comprises an inlet, an outlet, a porous flow layer, a porous contact layer contacting the electrostatic chuck, and a porous heat exchange layer disposed between the flow layer and the contact layer. The inlet communicates with the flow layer, and the outlet communicates with the contact layer. The fluid medium is introduced into the flow layer from the inlet and sequentially flows through the heat exchange layer and the contact layer. The fluid medium is discharged from the contact layer through the outlet, thereby exchanging heat from the semiconductor wafer.

Abstract: A system and method which is capable of compensating for unintended elevations in process temperatures induced in a substrate during a semiconductor fabrication process in order to reduce or eliminate disparities in critical dimensions of device features. The system may be a plasma etching system comprising a process chamber containing an electrostatic chuck (ESC) for supporting a wafer substrate. A chiller outside the process chamber includes a main coolant chamber, which contains a main coolant fluid, as well as an compensation coolant chamber, which contains an compensation coolant fluid. A main circulation loop normally circulates the main coolant fluid from the main coolant chamber through the electrostatic chuck to maintain the chuck at a desired set point temperature.