Patents by Inventor Tse-Yong Yao
Tse-Yong Yao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20050031784Abstract: The invention generally provides a method for preparing a surface for electrochemical deposition comprising forming a high conductance barrier layer on the surface and depositing a seed layer over the high conductance barrier layer. Another aspect of the invention provides a method for filling a structure on a substrate, comprising depositing a high conductance barrier layer on one or more surfaces of the structure, depositing a seed layer over the barrier layer, and electrochemically depositing a metal to fill the structure.Type: ApplicationFiled: September 1, 2004Publication date: February 10, 2005Inventors: Peijun Ding, Tony Chiang, Tse-Yong Yao, Barry Chin
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Patent number: 6790776Abstract: The invention generally provides a method for preparing a surface for electrochemical deposition comprising forming a high conductance barrier layer on the surface and depositing a seed layer over the high conductance barrier layer. Another aspect of the invention provides a method for filling a structure on a substrate, comprising depositing a high conductance barrier layer on one or more surfaces of the structure, depositing a seed layer over the barrier layer, and electrochemically depositing a metal to fill the structure.Type: GrantFiled: December 10, 2001Date of Patent: September 14, 2004Assignee: Applied Materials, Inc.Inventors: Peijun Ding, Tony Chiang, Tse-Yong Yao, Barry Chin
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Patent number: 6607640Abstract: A method of improving the temperature control of a clamped substrate mounted on a substrate support that is biased, the substrate support having a passage therethrough to permit a flow of backside gas for heating or cooling the substrate, whereby the pressure of the backside gas is maintained at at least 15 torr. A high gas pressure improves the thickness uniformity of processing across the substrate. For plasma deposition of sputtered seed layers, the morphology of the seed layer is improved near the edge of the substrate and the uniformity of the layer across the substrate is also improved.Type: GrantFiled: March 29, 2000Date of Patent: August 19, 2003Assignee: Applied Materials, Inc.Inventors: Arvind Sundarrajan, Darryl Angelo, Tse-Yong Yao, Peijun Ding
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Patent number: 6436832Abstract: High through-put CMP is achieved by the application of a cleaning composition on to an exposed surface of a metal layer prior to polishing the bulk metal layer. Embodiments of the present invention include applying an aqueous composition containing citric acid and ammonium hydroxide in deionized water to remove a native oxide film that forms on a copper containing layer and then polishing the copper containing layer to substantially planarize the metal layer.Type: GrantFiled: May 23, 2000Date of Patent: August 20, 2002Assignee: Applied Materials, IncInventors: Yutao Ma, Juilung Li, Fred C. Redeker, Tse-Yong Yao, Rajeev Bajaj
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Patent number: 6436302Abstract: Cu metallization is treated to reduce defects and effect passivation, and to reduce leakage between lines, by removing surface defects subsequent to CMP and barrier layer removal. Embodiments include the sequential steps of: CMP and barrier layer removal; buffing with a solution comprising citric acid, ammonium hydroxide and deionized water to remove copper oxide; rinsing with deionized water or an inhibitor solution, e.g., benzotriazole or 5-methyl triazole in deionized water; buffing with an abrasive slurry; and rinsing with deionized water or an inhibitor solution.Type: GrantFiled: January 27, 2000Date of Patent: August 20, 2002Assignee: Applied Materials, Inc.Inventors: Juy-Lung Li, Tse-Yong Yao, Fred C. Redeker, Rajeev Bajaj, Yutao Ma
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Publication number: 20020092772Abstract: The invention generally provides a method for preparing a surface for electrochemical deposition comprising forming a high conductance barrier layer on the surface and depositing a seed layer over the high conductance barrier layer. Another aspect of the invention provides a method for filling a structure on a substrate, comprising depositing a high conductance barrier layer on one or more surfaces of the structure, depositing a seed layer over the barrier layer, and electrochemically depositing a metal to fill the structure.Type: ApplicationFiled: December 10, 2001Publication date: July 18, 2002Applicant: Applied Materials.Inventors: Peijun Ding, Tony Chiang, Tse-Yong Yao, Barry Chin
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Publication number: 20020089027Abstract: The present invention pertains to a carrier layer and a contact enabled by the carrier layer which enables the fabrication of aluminum (including aluminum alloys and other conductive materials having a similar melting point) electrical contacts in multilayer integrated circuit vias, through holes, or trenches having an aspect ratio greater than one. In fact, the structure has been shown to enable such contact fabrication in vias, through holes, and trenches having aspect ratios as high as at least 5:1, and should be capable of filing apertures having aspect ratios up to about 12:1. The carrier layer, in addition to permitting the formation of a conductive contact at high aspect ratio, provides a diffusion barrier which prevents the aluminum from migrating into surrounding substrate material which operates in conjunction with the electrical contact.Type: ApplicationFiled: March 6, 2002Publication date: July 11, 2002Inventors: Zheng Xu, John Forster, Tse-Yong Yao
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Patent number: 6328871Abstract: The invention generally provides a method for preparing a surface for electrochemical deposition comprising forming a high conductance barrier layer on the surface and depositing a seed layer over the high conductance barrier layer. Another aspect of the invention provides a method for filling a structure on a substrate, comprising depositing a high conductance barrier layer on one or more surfaces of the structure, depositing a seed layer over the barrier layer, and electrochemically depositing a metal to fill the structure.Type: GrantFiled: August 16, 1999Date of Patent: December 11, 2001Assignee: Applied Materials, Inc.Inventors: Peijun Ding, Tony Chiang, Tse-Yong Yao, Barry Chin
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Patent number: 6313027Abstract: The present invention pertains to a carrier layer and a contact enabled by the carrier layer which enables the fabrication of aluminum (including aluminum alloys and other conductive materials having a similar melting point) electrical contacts in multilayer integrated circuit vias, through holes, or trenches having an aspect ratio greater than one. In fact, the structure has been shown to enable such contact fabrication in vias, through holes, and trenches having aspect ratios as high as at least 5:1, and should be capable of filing apertures having aspect ratios up to about 12:1. The carrier layer, in addition to permitting the formation of a conductive contact at high aspect ratio, provides a diffusion barrier which prevents the aluminum from migrating into surrounding substrate material which operates in conjunction with the electrical contact.Type: GrantFiled: October 6, 1997Date of Patent: November 6, 2001Assignee: Applied Materials, Inc.Inventors: Zheng Xu, John Forster, Tse-Yong Yao
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Publication number: 20010025783Abstract: A method of improving the temperature control of a clamped substrate mounted on a substrate support that is biased, the substrate support having a passage therethrough to permit a flow of backside gas for heating or cooling the substrate, whereby the pressure of the backside gas is maintained at at least 15 torr. A high gas pressure improves the thickness uniformity of processing across the substrate. For plasma deposition of sputtered seed layers, the morphology of the seed layer is improved near the edge of the substrate and the uniformity of the layer across the substrate is also improved.Type: ApplicationFiled: March 29, 2000Publication date: October 4, 2001Inventors: Arvind Sundarrajan, Darryl Angelo, Tse-Yong Yao, Peijun Ding
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Patent number: 6277198Abstract: A method and apparatus is provided for clamping and shielding the edge of a substrate useful in electronic device fabrication. A shadow ring is formed by an inward radial extension of the top surface of a generally annular shaped clamp ring. The shadow ring portion overhangs but does not contact the top surface of a substrate being processed. A smoothly tapered substrate contact surface extending from the outer diametrical extent of the shadow ring bottom surface to the bottom surface of the clamp ring is sized and adapted to engage the outer edge of a substrate. The substrate contact surface aligns the clamp ring to a substrate support member and a substrate to the substrate support member and the clamp ring as the substrate is lifted vertically.Type: GrantFiled: June 4, 1999Date of Patent: August 21, 2001Assignee: Applied Materials, Inc.Inventors: Tse-Yong Yao, Allen Thompson, Peijun Ding, Richard Hong
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Patent number: 6217721Abstract: An aluminum sputtering process, particularly useful for filling vias and contacts of high aspect ratios formed through a dielectric layer and also usefull for forming interconnects that are highly resistant to electromigration. A liner or barrier layer is first deposited by a high-density plasma (HDP) physical vapor deposition (PVD, also called sputtering) process, such as is done with an inductively coupled plasma. If a contact is connected at its bottom to a silicon element, the first sublayer of the liner layer is a Ti layer, which is silicided to the silicon substrate. The second sublayer comprises TiN, which not only acts as a barrier against the migration of undesirable components into the underlying silicon but also when deposited with an HDP process and biased wafer forms a dense, smooth crystal structure. The third sublayer comprises Ti and preferably is graded from TiN to Ti. Over the liner layer, an aluminum layer is deposited in a standard, non-HDP process.Type: GrantFiled: April 5, 1996Date of Patent: April 17, 2001Assignee: Applied Materials, Inc.Inventors: Zheng Xu, John Forster, Tse-Yong Yao, Jaim Nulman, Fusen Chen
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Patent number: 6140235Abstract: The present invention provides a method and apparatus for filling submicron features on a substrate with a polycrystalline metal such as copper or a copper alloy comprising at least 90% by weight of copper. The method comprises deposition of a polycrystalline metal layer which bridges the submicron features and has a grain size smaller than the submicron features, and exposing the polycrystalline metal layer to a high pressure processing gas at a temperature less than one half of the absolute melting temperature to extrude the metal layer into the submicron features.Type: GrantFiled: December 5, 1997Date of Patent: October 31, 2000Assignee: Applied Materials, Inc.Inventors: Tse-Yong Yao, Barry Chin
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Patent number: 6136095Abstract: The present invention pertains to a carrier layer and a contact enabled by the carrier layer which enables the fabrication of aluminum (including aluminum alloys and other conductive materials having a similar melting point) electrical contacts in multilayer integrated circuit vias, through holes, or trenches having an aspect ratio greater than one. In fact, the structure has been shown to enable such contact fabrication in vias, through holes, and trenches having aspect ratios as high as at least 5:1, and should be capable of filing apertures having aspect ratios up to about 12:1. The carrier layer, in addition to permitting the formation of a conductive contact at high aspect ratio, provides a diffusion barrier which prevents the aluminum from migrating into surrounding substrate material which operates in conjunction with the electrical contact.Type: GrantFiled: October 6, 1997Date of Patent: October 24, 2000Assignee: Applied Materials, Inc.Inventors: Zheng Xu, John Forster, Tse-Yong Yao
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Patent number: 6051114Abstract: The present invention provides a method and apparatus for preferential PVD conductor fill in an integrated circuit structure. The present invention utilizes a high density plasma for sputter deposition of a conductive layer on a patterned substrate, and a pulsed DC power source capacitively coupled to the substrate to generate an ion current at the surface of the substrate. The ion current prevents sticking of the deposited material to the field areas of the patterned substrate, or etches deposited material from the field areas to eliminate crowning or cusping problems associated with deposition of a conductive material in a trench, hole or via formed on the substrate.Type: GrantFiled: June 23, 1997Date of Patent: April 18, 2000Assignee: Applied Materials, Inc.Inventors: Tse-Yong Yao, Zheng Xu, Kenny King-tai Ngan, Xing Chen, John Urbahn, Lawrence P. Bourget
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Patent number: 5962923Abstract: The present invention pertains to a carrier layer and a contact enabled by the carrier layer which enables the fabrication of aluminum (including aluminum alloys and other conductive materials having a similar melting point) electrical contacts in multilayer integrated circuit vias, through holes, or trenches having an aspect ratio greater than one. In fact, the structure has been shown to enable such contact fabrication in vias, through holes, and trenches having aspect ratios as high as at least 5:1, and should be capable of filing apertures having aspect ratios up to about 12:1. The carrier layer, in addition to permitting the formation of a conductive contact at high aspect ratio, provides a diffusion barrier which prevents the aluminum from migrating into surrounding substrate material which operates in conjunction with the electrical contact.Type: GrantFiled: August 7, 1995Date of Patent: October 5, 1999Assignee: Applied Materials, Inc.Inventors: Zheng Xu, John Forster, Tse-Yong Yao
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Patent number: 5847461Abstract: A process and resulting structure are described for using a metal layer formed over an insulating layer as both the filler material to fill openings in the insulating layer and as the patterned metal interconnect or wiring harness on the surface of the insulating layer. The process includes the steps of forming a compressively stressed metal layer over an insulating layer having previously formed openings therethrough to the material under the insulating layer; forming a high tensile strength cap layer of material over the compressively stressed metal layer; and then heating the structure to a temperature sufficient to cause the compressively stressed metal layer to extrude down into the openings in the underlying insulating layer. The overlying cap layer has sufficient tensile strength to prevent or inhibit the compressive stressed metal layer from extruding upwardly to form hillocks which would need to be removed, i.e., by planarization.Type: GrantFiled: June 17, 1996Date of Patent: December 8, 1998Assignee: Applied Materials, Inc.Inventors: Zheng Xu, Tse-Yong Yao, Hoa Kieu, Julio Aranovich
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Patent number: 5668055Abstract: A process and resulting structure are described for using a metal layer formed over an insulating layer as both the filler material to fill openings in the insulating layer and as the patterned metal interconnect or wiring harness on the surface of the insulating layer. The process includes the steps of forming a compressively stressed metal layer over an insulating layer having previously formed openings therethrough to the material under the insulating layer; forming a high tensile strength cap layer of material over the compressively stressed metal layer; and then heating the structure to a temperature sufficient to cause the compressively stressed metal layer to extrude down into the openings in the underlying insulating layer. The overlying cap layer has sufficient tensile strength to prevent or inhibit the compressive stressed metal layer from extruding upwardly to form hillocks which would need to be removed, i.e., by planarization.Type: GrantFiled: May 5, 1995Date of Patent: September 16, 1997Assignee: Applied Materials, Inc.Inventors: Zheng Xu, Tse-Yong Yao, Hoa Kieu, Julio Aranovich