Abstract: This disclosure discloses a light-emitting device. The light-emitting device has a first outermost sidewall and includes a light-emitting diode and an electrode. The light-emitting diode has a pad and a side surface. The electrode has a segment formed on the pad to extend beyond the side surface, and a first protrusion extending from the segment to the first outermost sidewall.

Abstract: A light-emitting device is provided. The light-emitting device comprises: a semiconductor system comprising a light-emitting semiconductor stack; an electrode comprising a surface next to the semiconductor system; a contact material in the semiconductor system and in the electrode, wherein the contact material has a largest intensity at a first depth position in the electrode, and the contact material is selected from the group consisting of Be, Se, Sn, Zn, and combinations thereof; and a base material different from the base material and in the electrode.

Abstract: A light-emitting device is provided. The light-emitting device comprises: a semiconductor system comprising a light-emitting semiconductor stack; an electrode comprising a surface next to the semiconductor system; a contact material in the semiconductor system and in the electrode, wherein the contact material has a largest intensity at a first depth position in the electrode, and the contact material is selected from the group consisting of Be, Se, Sn, Zn, and combinations thereof; and a base material different from the base material and in the electrode.

Abstract: A light-emitting device is provided. The light-emitting device comprises: a semiconductor system comprising a light-emitting semiconductor stack; and an electrode comprising a surface next to the semiconductor system and comprising a base material and a contact material different from the base material, wherein the contact material diffuses into the semiconductor system; wherein the contact material has a largest intensity at a first depth position from a SIMS spectrum, and a distance between the first depth position and the surface is not less than 500 nm.

Abstract: This disclosure discloses a light-emitting device. The light-emitting device has a first outermost sidewall and includes a light-emitting diode and an electrode. The light-emitting diode has a pad and a side surface. The electrode has a segment formed on the pad to extend beyond the side surface, and a first protrusion extending from the segment to the first outermost sidewall.

Abstract: A light-emitting device is provided. The light-emitting device comprises: a semiconductor system comprising a light-emitting semiconductor stack; and an electrode comprising a surface next to the semiconductor system and comprising a base material and a contact material different from the base material, wherein the contact material diffuses into the semiconductor system; wherein the contact material has a largest intensity at a first depth position from a SIMS spectrum, and a distance between the first depth position and the surface is not less than 500 nm.

Abstract: A light-emitting device comprises: a light-emitting semiconductor stack; and an electrode on the light-emitting semiconductor stack comprising a base material and a contact material different from the base material and capable of forming an ohmic contact with semiconductor material; wherein the contact material is distributed over a part of the light-emitting device and has a largest concentration in the electrode.

Abstract: A light-emitting device comprises: a light-emitting semiconductor stack; and an electrode on the light-emitting semiconductor stack comprising a base material and a contact material different from the base material and capable of forming an ohmic contact with semiconductor material; wherein the contact material is distributed over a part of the light-emitting device and has a largest concentration in the electrode.

Abstract: A light-emitting device comprises a substrate, and a light-emitting structure formed on the substrate. The light-emitting structure comprises a first active layer emitting the light with a first wavelength, and a second active layer emitting the light with a second wavelength. The light-emitting structure is formed by the first active layer and the second active layer stacked alternately.

Abstract: This invention discloses a wafer-scaled light-emitting structure comprising a supportive substrate; an anti-deforming layer; a bonding layer; and a light-emitting stacked layer, wherein the anti-deforming layer reduces or removes the deformation like warp caused by thinning of the substrate.

Abstract: This invention discloses a wafer-scaled light-emitting structure comprising a supportive substrate; an anti-deforming layer; a bonding layer; and a light-emitting stacked layer, wherein the anti-deforming layer reduces or removes the deformation like warp caused by thinning of the substrate.

Abstract: A light-emitting device comprises a substrate, and a light-emitting structure formed on the substrate. The light-emitting structure comprises a first active layer emitting the light with a first wavelength, and a second active layer emitting the light with a second wavelength. The light-emitting structure is formed by the first active layer and the second active layer stacked alternately.

Abstract: This invention discloses a wafer-scaled light-emitting structure comprising a supportive substrate; an anti-deforming layer; a bonding layer; and a light-emitting stacked layer, wherein the anti-deforming layer reduces or removes the deformation like warp caused by thinning of the substrate.