Abstract: The invention provides a metal oxide semiconductor (MOS) capacitor structure, which includes a counter-doping region in the channel region directly below the gate. Between the deep ion well and the counter-doping region is a semiconductor region. The doping concentration of the semiconductor region is lower than that of the deep ion well. The P-type well ion implantation processes in the active region of the device can be omitted, so the production cost is lower, and the dosage of the counter-doping region can be reduced, which improves the time-dependent dielectric collapse (TDDB) issue.

Abstract: A heat press docking station base (52) comprises a nest portion (75) and one or more legs (58). The nest portion (52) includes a body shell (60, 62) and a perforated floor (54). The body shell (60, 62) includes a lower surface (63). The perforated floor (54) is connected to the body shell (60, 62). The one or more legs (58) extend from a lower surface (63) of the body shell (60, 62).

Abstract: A heat press docking station base (52) comprises a nest portion (75) and one or more legs (58). The nest portion (52) includes a body shell (60, 62) and a perforated floor (54). The body shell (60, 62) includes a lower surface (63). The perforated floor (54) is connected to the body shell (60, 62). The one or more legs (58) extend from a lower surface (63) of the body shell (60, 62).

Abstract: A heat press includes a handle portion and a curved heat plate. That handle portion may be configured to be grasped by a user, and the curved heat (i.e., having a curved engagement surface) may be configured to engage a heat-activated design implement to transfer a design of the heat-activated design implement to a curved surface of a workpiece. Also disclosed herein, according to various embodiments, is a heat press stand having a curved floor and a hat form for supporting a workpiece (e.g., a hat) during a heat-activated design transfer using the heat press. Associated methods are also disclosed herein.

Abstract: A heat press includes a handle portion and a curved heat plate. That handle portion may be configured to be grasped by a user, and the curved heat (i.e., having a curved engagement surface) may be configured to engage a heat-activated design implement to transfer a design of the heat-activated design implement to a curved surface of a workpiece. Also disclosed herein, according to various embodiments, is a heat press stand having a curved floor and a hat form for supporting a workpiece (e.g., a hat) during a heat-activated design transfer using the heat press. Associated methods are also disclosed herein.

Abstract: A heat press docking station base (52) comprises a nest portion (75) and one or more legs (58). The nest portion (52) includes a body shell (60, 62) and a perforated floor (54). The body shell (60, 62) includes a lower surface (63). The perforated floor (54) is connected to the body shell (60, 62). The one or more legs (58) extend from a lower surface (63) of the body shell (60, 62).

Abstract: A heat press docking station base (52) comprises a nest portion (75) and one or more legs (58). The nest portion (52) includes a body shell (60, 62) and a perforated floor (54). The body shell (60, 62) includes a lower surface (63). The perforated floor (54) is connected to the body shell (60, 62). The one or more legs (58) extend from a lower surface (63) of the body shell (60, 62).

Abstract: The present application relates to a driving circuit for display panel, which drives a plurality of pixel structures of a display panel. Each of pixel structures comprises a light emitting element, which is coupled between a first voltage and a second voltage. The driving circuit comprises a power supply circuit, which is coupled to the pixel structures, provides the first voltage and the second voltage, and adjusts the first voltage or/and the second voltage for adjusting a voltage difference between the first voltage and the second voltage. That is, a current flowing through the light emitting elements of the pixel structures may be adjusted for reducing the flicker in the display panel.

Abstract: A semiconductor structure includes a conductive structure, a dielectric layer, and a plurality of conductive features. The dielectric layer is present on the conductive structure. The dielectric layer has a plurality of through holes therein, and at least one of the through holes exposes the conductive structure. The conductive features are respectively present in the through holes. At least one of the conductive features has a bottom surface and at least one sidewall. The bottom surface and the sidewall of the conductive feature intersect to form an interior angle. The interior angles of adjacent two of the conductive features have a difference less than or substantially equal to about 3 degrees.