Abstract: Provided is a method for inserting a pre-designed filler cell, as a replacement to a standard filler cell, including identifying at least one gap among a plurality of functional cells. In some embodiments, a pre-designed filler cell is inserted within the at least one gap. By way of example, the pre-designed filler cell includes a layout design having a pattern associated with a particular failure mode. In various embodiments, a layer is patterned on a semiconductor substrate such that the pattern of the layout design is transferred to the layer on the semiconductor substrate. Thereafter, the patterned layer is inspected using an electron beam (e-beam) inspection process.

Abstract: Integrated circuits and methods for overlap measure are provided. In an embodiment, an integrated circuit includes a plurality of functional cells including at least one gap disposed adjacent to at least one functional cell of the plurality of functional cells and a first overlay test pattern cell disposed within the at least one gap, wherein the first overlay test pattern cell includes a first number of patterns disposed along a first direction at a first pitch. The first pitch is smaller than a smallest wavelength on a full spectrum of humanly visible lights.

Abstract: Provided is a method for inserting a pre-designed filler cell, as a replacement to a standard filler cell, including identifying at least one gap among a plurality of functional cells. In some embodiments, a pre-designed filler cell is inserted within the at least one gap. By way of example, the pre-designed filler cell includes a layout design having a pattern associated with a particular failure mode. In various embodiments, a layer is patterned on a semiconductor substrate such that the pattern of the layout design is transferred to the layer on the semiconductor substrate. Thereafter, the patterned layer is inspected using an electron beam (e-beam) inspection process.

Abstract: Integrated circuits and methods for overlap measure are provided. In an embodiment, an integrated circuit includes a plurality of functional cells including at least one gap disposed adjacent to at least one functional cell of the plurality of functional cells and a first overlay test pattern cell disposed within the at least one gap, wherein the first overlay test pattern cell includes a first number of patterns disposed along a first direction at a first pitch. The first pitch is smaller than a smallest wavelength on a full spectrum of humanly visible lights.

Abstract: Provided is a method for inserting a pre-designed filler cell, as a replacement to a standard filler cell, including identifying at least one gap among a plurality of functional cells. In some embodiments, a pre-designed filler cell is inserted within the at least one gap. By way of example, the pre-designed filler cell includes a layout design having a pattern associated with a particular failure mode. In various embodiments, a layer is patterned on a semiconductor substrate such that the pattern of the layout design is transferred to the layer on the semiconductor substrate. Thereafter, the patterned layer is inspected using an electron beam (e-beam) inspection process.

Abstract: Provided is a method for inserting a pre-designed filler cell, as a replacement to a standard filler cell, including identifying at least one gap among a plurality of functional cells. In some embodiments, a pre-designed filler cell is inserted within the at least one gap. By way of example, the pre-designed filler cell includes a layout design having a pattern associated with a particular failure mode. In various embodiments, a layer is patterned on a semiconductor substrate such that the pattern of the layout design is transferred to the layer on the semiconductor substrate. Thereafter, the patterned layer is inspected using an electron beam (e-beam) inspection process.

Abstract: Integrated circuits and methods for overlap measure are provided. In an embodiment, an integrated circuit includes a plurality of functional cells including at least one gap disposed adjacent to at least one functional cell of the plurality of functional cells and a first overlay test pattern cell disposed within the at least one gap, wherein the first overlay test pattern cell includes a first number of patterns disposed along a first direction at a first pitch. The first pitch is smaller than a smallest wavelength on a full spectrum of humanly visible lights.

Abstract: Integrated circuits and methods for overlap measure are provided. In an embodiment, an integrated circuit includes a plurality of functional cells including at least one gap disposed adjacent to at least one functional cell of the plurality of functional cells and a first overlay test pattern cell disposed within the at least one gap, wherein the first overlay test pattern cell includes a first number of patterns disposed along a first direction at a first pitch. The first pitch is smaller than a smallest wavelength on a full spectrum of humanly visible lights.

Abstract: Provided is a method for inserting a pre-designed filler cell, as a replacement to a standard filler cell, including identifying at least one gap among a plurality of functional cells. In some embodiments, a pre-designed filler cell is inserted within the at least one gap. By way of example, the pre-designed filler cell includes a layout design having a pattern associated with a particular failure mode. In various embodiments, a layer is patterned on a semiconductor substrate such that the pattern of the layout design is transferred to the layer on the semiconductor substrate. Thereafter, the patterned layer is inspected using an electron beam (e-beam) inspection process.

Abstract: Provided is a method for inserting a pre-designed filler cell, as a replacement to a standard filler cell, including identifying at least one gap among a plurality of functional cells. In some embodiments, a pre-designed filler cell is inserted within the at least one gap. By way of example, the pre-designed filler cell includes a layout design having a pattern associated with a particular failure mode. In various embodiments, a layer is patterned on a semiconductor substrate such that the pattern of the layout design is transferred to the layer on the semiconductor substrate. Thereafter, the patterned layer is inspected using an electron beam (e-beam) inspection process.

Abstract: Integrated circuits and methods for overlap measure are provided. In an embodiment, an integrated circuit includes a plurality of functional cells including at least one gap disposed adjacent to at least one functional cell of the plurality of functional cells and a first overlay test pattern cell disposed within the at least one gap, wherein the first overlay test pattern cell includes a first number of patterns disposed along a first direction at a first pitch. The first pitch is smaller than a smallest wavelength on a full spectrum of humanly visible lights.

Abstract: Provided is a method for inserting a pre-designed filler cell, as a replacement to a standard filler cell, including identifying at least one gap among a plurality of functional cells. In some embodiments, a pre-designed filler cell is inserted within the at least one gap. By way of example, the pre-designed filler cell includes a layout design having a pattern associated with a particular failure mode. In various embodiments, a layer is patterned on a semiconductor substrate such that the pattern of the layout design is transferred to the layer on the semiconductor substrate. Thereafter, the patterned layer is inspected using an electron beam (e-beam) inspection process.

Abstract: Provided is a method for inserting a pre-designed filler cell, as a replacement to a standard filler cell, including identifying at least one gap among a plurality of functional cells. In some embodiments, a pre-designed filler cell is inserted within the at least one gap. By way of example, the pre-designed filler cell includes a layout design having a pattern associated with a particular failure mode. In various embodiments, a layer is patterned on a semiconductor substrate such that the pattern of the layout design is transferred to the layer on the semiconductor substrate. Thereafter, the patterned layer is inspected using an electron beam (e-beam) inspection process.

Abstract: Provided is a method for inserting a pre-designed filler cell, as a replacement to a standard filler cell, including identifying at least one gap among a plurality of functional cells. In some embodiments, a pre-designed filler cell is inserted within the at least one gap. By way of example, the pre-designed filler cell includes a layout design having a pattern associated with a particular failure mode. In various embodiments, a layer is patterned on a semiconductor substrate such that the pattern of the layout design is transferred to the layer on the semiconductor substrate. Thereafter, the patterned layer is inspected using an electron beam (e-beam) inspection process.

Abstract: A system and method for aligning a probe, such as a wafer-level test probe, with wafer contacts is disclosed. An exemplary method includes receiving a wafer containing a plurality of alignment contacts and a probe card containing a plurality of probe points at a wafer test system. A historical offset correction is received. Based on the historical offset correct, an orientation value for the probe card relative to the wafer is determined. The probe card is aligned to the wafer using the orientation value in an attempt to bring a first probe point into contact with a first alignment contact. The connectivity of the first probe point and the first alignment contact is evaluated. An electrical test of the wafer is performed utilizing the aligned probe card, and the historical offset correction is updated based on the orientation value.

Abstract: Provided is a method for inserting a pre-designed filler cell, as a replacement to a standard filler cell, including identifying at least one gap among a plurality of functional cells. In some embodiments, a pre-designed filler cell is inserted within the at least one gap. By way of example, the pre-designed filler cell includes a layout design having a pattern associated with a particular failure mode. In various embodiments, a layer is patterned on a semiconductor substrate such that the pattern of the layout design is transferred to the layer on the semiconductor substrate. Thereafter, the patterned layer is inspected using an electron beam (e-beam) inspection process.

Abstract: One or more probe cards, wafer testers, and techniques for testing a semiconductor arrangement are provided. Testline arrangements are formed within scribe lines of a semiconductor wafer, in multiple directions, such as an x-direction and a y-direction. A wafer tester is configured to concurrently test the semiconductor arrangement in multiple directions using a multidirectional probe arrangement of a probe card. In some embodiments, a first pin arrangement of the multidirectional probe arrangement is mated with a first testline arrangement in a first direction, and a second pin arrangement of the multidirectional probe arrangement is mated with a second testline arrangement in a second direction. The wafer tester concurrently tests the semiconductor arrangement in multiple directions, such as in the first direction and the second direction, through the pin arrangements mated with the testline arrangements.

Abstract: Provided is a method for inserting a pre-designed filler cell, as a replacement to a standard filler cell, including identifying at least one gap among a plurality of functional cells. In some embodiments, a pre-designed filler cell is inserted within the at least one gap. By way of example, the pre-designed filler cell includes a layout design having a pattern associated with a particular failure mode. In various embodiments, a layer is patterned on a semiconductor substrate such that the pattern of the layout design is transferred to the layer on the semiconductor substrate. Thereafter, the patterned layer is inspected using an electron beam (e-beam) inspection process.

Abstract: One or more probe cards, wafer testers, and techniques for testing a semiconductor arrangement are provided. Testline arrangements are formed within scribe lines of a semiconductor wafer, in multiple directions, such as an x-direction and a y-direction. A wafer tester is configured to concurrently test the semiconductor arrangement in multiple directions using a multidirectional probe arrangement of a probe card. In some embodiments, a first pin arrangement of the multidirectional probe arrangement is mated with a first testline arrangement in a first direction, and a second pin arrangement of the multidirectional probe arrangement is mated with a second testline arrangement in a second direction. The wafer tester concurrently tests the semiconductor arrangement in multiple directions, such as in the first direction and the second direction, through the pin arrangements mated with the testline arrangements.

Abstract: A system and method for aligning a probe, such as a wafer-level test probe, with wafer contacts is disclosed. An exemplary method includes receiving a wafer containing a plurality of alignment contacts and a probe card containing a plurality of probe points at a wafer test system. A historical offset correction is received. Based on the historical offset correct, an orientation value for the probe card relative to the wafer is determined. The probe card is aligned to the wafer using the orientation value in an attempt to bring a first probe point into contact with a first alignment contact. The connectivity of the first probe point and the first alignment contact is evaluated. An electrical test of the wafer is performed utilizing the aligned probe card, and the historical offset correction is updated based on the orientation value.