Abstract: A method is provided for performing wear management in a non-volatile memory device which includes a plurality of storage units. A first error count associated with the amount of error bits generated in a specific storage unit during a first access is acquired. A second error count associated with an amount of error bits generated in the specific storage unit during a second access is retrieved, wherein the second access occurs earlier than the first access. An early retirement threshold is set to a first value when the difference between the first error count and the second error count does not exceed the predetermined value, or set to a second value smaller than the first value when the difference between the first error count and the second error count exceeds the predetermined value. The specific storage unit is marked as a bad storage unit when the first error count exceeds the early retirement threshold.

Abstract: A method of executing wear leveling in a flash memory device includes determining whether a current temperature is in a normal operating temperature range of the flash memory device, and reprogramming data associated with data blocks to another location in a flash memory array when the current temperature is in the normal operating temperature range of the flash memory device, wherein the data is programmed in a temperature out of the normal operating temperature range of the flash memory device.

Abstract: A method of executing wear leveling in a flash memory device includes determining whether a current temperature is in a normal operating temperature range of the flash memory device, and reprogramming data associated with data blocks to another location in a flash memory array when the current temperature is in the normal operating temperature range of the flash memory device, wherein the data is programmed in a temperature out of the normal operating temperature range of the flash memory device.

Abstract: A memory apparatus and method for protecting the memory apparatus are provided. The memory apparatus includes a memory unit, a memory control unit, a switch and a control circuit. The memory control unit is used for reading from or writing to the memory unit and has a build-in protection unit. The switch has a lock end and a normal end. The control circuit is coupled between the switch and the memory control unit and is used for detecting the position of the switch. Once the switch is switched to the lock end and the memory apparatus receives a working voltage, the protection unit is automatically enabled by the control circuit to inhibit the memory control unit from reading data from or writing data to the memory unit.