Patents by Inventor Tseung-Yeun Tseng

Tseung-Yeun Tseng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nonvolatile memory and fabrication method thereof
    Publication number: 20080169458
    Abstract: Non-volatile memories formed on a substrate and fabrication methods are disclosed. A bottom electrode comprising a metal layer is disposed on the substrate. A buffer layer comprising a LaNiO3 film is disposed over the metal layer. A resistor layer comprising a SrZrO3 film is disposed on the buffer layer. A top electrode is disposed on the resistor layer.
    Type: Application
    Filed: March 20, 2007
    Publication date: July 17, 2008
    Inventors: Tseung-Yeun Tseng, Chun-chieh Lin, Chao-Cheng Lin