Abstract: A data value is stored in a random access memory cell by driving the bit lines of the cell to complementary values representative of the value. The word line for the cell is driven to make a cell selection and cause the data value to be loaded into the cell from the bit lines. Thereafter, the word line is deselected. Following deselection, both bit lines are discharged to a logic low level. During discharging, however, a leakage current is allowed to flow through at least one of the bit lines so that the memory cell maintains the stored data value.