Abstract: A method of forming a mask for bombardment of a semiconductor substrate with high energy particles and a mask formed thereby are provided. A patterned layer of a blocking material is formed over a mask substrate to define a high energy particle bombardment mask pattern. The blocking material has sufficient thickness in the mask pattern to substantially shield the semiconductor substrate from selected high energy particles in areas overlapped by the mask pattern when the mask is aligned over the semiconductor substrate. The mask includes a mask substrate having a patterned layer of blocking material formed thereon to define a high energy particle bombardment mask pattern. The blocking material has sufficient thickness in the mask pattern to substantially shield the semiconductor substrate from selected high energy particles in areas of the semiconductor substrate overlapped by the mask pattern when the mask is aligned over the semiconductor substrate.

Abstract: Accelerators and implanters of nowadays are simply wasting too much energy on excitation of lattice electrons, rather than using energy on the desired nuclear scatterings. This current invention suppresses the undesired electronic stopping loss via causing effective neutralizing screening of the particles during their penetration through the target, using parallel speedy conduction electrons induced by assistant radiations. The assistant radiation beam of this invention can take the form of energetic electrons, X ray or &ggr; ray, for example. One great advantage of the present invention is to further expand the application domains of existing accelerators and implanters, using readily available, relatively cheap and easy-to-implement radiation sources. The then saved particle energy will be redirected to reaching more depth or to rendering more defects within the target as desired. This invention is expected to bring great impacts on various application domains.