Patents by Inventor Tstsuji Ueno

Tstsuji Ueno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEAL MATERIAL FOR AIR GAPS IN SEMICONDUCTOR DEVICES
    Publication number: 20210193798
    Abstract: The present disclosure relates to a semiconductor device including first and second terminals formed on a fin region and a seal layer formed between the first and second terminals. The seal layer includes a silicon carbide material doped with oxygen. The semiconductor device also includes an air gap surrounded by the seal layer, the fin region, and the first and second terminals.
    Type: Application
    Filed: July 23, 2020
    Publication date: June 24, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shuen-Shin Liang, Chen-Han Wang, Keng-Chu Lin, Tstsuji Ueno, Ting-Ting Chen