Abstract: Aminothiazole compounds of Formula (I) shown herein and pharmaceutical compositions containing one of such compounds.

Abstract: Aminothiazole compounds of Formula (I) shown herein and pharmaceutical compositions containing one of such compounds.

Abstract: Pyrrolidine compounds described herein and methods for using them to inhibit dipeptidyl peptidase IV and treat Type II diabetes.

Abstract: Pyrrolidine compounds described herein and methods for using them to inhibit dipeptidyl peptidase IV and treat Type II diabetes.

Abstract: The present invention relates to a power socket, comprises: at least two metal pins respectively and integratedly formed by punching and bending a solid round-column shaped metal wire, so one end of each of the metal pins is defined as a solid round-column shaped contact section, and the other end of each of the metal pins is defined as a flat terminal section, and the top end of each of the contact sections is provided with an arc-shaped head section; and an insulating seat member which is a solid member formed via an operation of plastic injecting formation, the insulating seat member is served to cover and retained the at least two metal pins, so a connecting hole is formed on one surface of the seat member for accommodating and positioning the at least two round-column shaped contact sections, the other surface of the seat member is served to let the at least two flat terminal sections expose outside.

Abstract: A method for forming via openings or contact holes with improved aspect ratios by using a deep UV photoresist is described. In the method, after a deep UV photoresist layer is deposited on top of a thick oxide layer, the deep UV photoresist layer is pre-treated by a curing process with UV radiation for a time period of at least 1 min, and preferably between about 1 min and about 10 min at a temperature of at least 100° C., and preferably at least 160° C. The curing process stabilizes the structure of the deep UV photoresist material and thus reduces the formation of fluorocarbon polymers by the carbon component in the photoresist material and the fluorine component in the etchant gas, and subsequently, reduces the coating of such fluorocarbon polymers at the bottom of the via openings which would otherwise stop the etching process during via or contact formation.

Abstract: A method for forming via openings or contact holes with improved aspect ratios by using a deep UV photoresist is described. In the method, after a deep UV photoresist layer is deposited on top of a thick oxide layer, the deep UV photoresist layer is pre-treated by a curing process with UV radiation for a time period of at least 1 min, and preferably between about 1 min and about 10 min at a temperature of at least 100° C., and preferably at least 160° C. The curing process stabilizes the structure of the deep UV photoresist material and thus reduces the formation of fluorocarbon polymers by the carbon component in the photoresist material and the fluorine component in the etchant gas, and subsequently, reduces the coating of such fluorocarbon polymers at the bottom of the via openings which would otherwise stop the etching process during via or contact formation.

Abstract: A plasma etching method for improving an aspect ratio including an etching profile including providing a substrate including an oxide containing insulating layer in a multilayer semiconductor device having at least a first underlying etching stop layer and at least a second etching stop layer overlying the oxide containing insulating layer; providing a patterned photoresist layer exposing an uppermost layer of the substrate for plasma etching; plasma etching through a thickness of at least a portion of the substrate; exposing the substrate to a polymerizing radiation source in at least a first curing process to initiate polymer cross-linking reactions; and plasma etching through at least another portion of a thickness of the substrate.