Abstract: A method of preventing the scrapping of semiconductor substrates due to improper deposition of thin films in a thin film vaporization system is disclosed. This is accomplished by providing a method of self-calibrating and testing the flow of liquid precursors in the vaporization system prior to the start of the deposition process. The vaporization of the liquid precursor in the deposition chamber and the concomitant pressure change in the chamber are correlated. This correlation is then used as a real time monitoring mechanism for self-calibrating and testing the flow of liquid precursors through the vaporization system. That the pressure change due to vaporization in the chamber is used as the key parameter, the thin film deposition is hence monitored by that parameter which directly predicts the film deposition characteristics. Consequently, each thin film run is assured of a successful run.

Abstract: A method of preventing the scrapping of semiconductor substrates due to improper deposition of thin films in a thin film vaporization system is disclosed. This is accomplished by providing a method of self-calibrating and testing the flow of liquid precursors in the vaporization system prior to the start of the deposition process. The vaporization of the liquid precursor in the deposition chamber and the concomitant pressure change in the chamber are correlated. This correlation is then used as a real time monitoring mechanism for self-calibrating and testing the flow of liquid precursors through the vaporization system. That the pressure change due to vaporization in the chamber is used as the key parameter, the thin film deposition is hence monitored by that parameter which directly predicts the film deposition characteristics. Consequently, each thin film run is assured of a successful run.

Abstract: A method of preventing the scrapping of semiconductor substrates due to improper deposition of thin films in a thin film vaporization system is disclosed. This is accomplished by providing a method of self-calibrating and testing the flow of liquid precursors in the vaporization system prior to the start of the deposition process. The vaporization of the liquid precursor in the deposition chamber and the concomitant pressure change in the chamber are correlated. This correlation is then used as a real time monitoring mechanism for self-calibrating and testing the flow of liquid precursors through the vaporization system. That the pressure change due to vaporization in the chamber is used as the key parameter, the thin film deposition is hence monitored by that parameter which directly predicts the film deposition characteristics. Consequently, each thin film run is assured of a successful run.

Abstract: A method for treating a gas dispensing device used in chemical vapor deposition and the device treated by such method are disclosed. In the method, a gas dispensing device fabricated substantially of aluminum is first provided that has a planar surface with a multiplicity of apertures therethrough. The planar surface is then exposed to a diluted acid solution that contains at least HNO3 for conducting a cleaning process. After the residual diluted acid solution has been removed from the planar surface, a second step of oxidation is carried out on the surface of the gas dispensing device by exposing the planar surface to an acid solution that contains at least HNO3 for a sufficient length of time until a metal oxide layer such as Al2O3 is formed to a thickness of at least 1 &mgr;m on the planar surface.