Abstract: A semiconductor device is provided, which includes an active region, a first semiconductor layer, a first metal element-containing structure, a first p-type or n-type layer, a second semiconductor layer and an insulating layer. The active region has a first surface and a second surface. The first semiconductor layer is at the first surface. The first metal element-containing structure covers the first semiconductor layer and comprising a first metal element. The first p-type or n-type layer is between the first semiconductor layer and the first metal element-containing structure. The second semiconductor layer is between the first semiconductor layer and the first p-type or n-type layer. The insulating layer covers a portion of the first semiconductor layer and a portion of the second semiconductor. The first p-type or n-type layer includes an oxygen element (O) and a second metal element and has a thickness less than or equal to 20 nm.

Abstract: A semiconductor device is provided, which includes a semiconductor stack and a first contact structure. The semiconductor stack includes an active layer and has a first surface and a second surface. The first contact structure is located on the first surface and includes a first semiconductor layer, a first metal element-containing structure and a first p-type or n-type layer. The first metal element-containing structure includes a first metal element. The first p-type or n-type layer physically contacts the first semiconductor layer and the first metal element-containing structure. The first p-type or n-type layer includes an oxygen element (O) and a second metal element and has a thickness less than or equal to 20 nm, and the first semiconductor layer includes a phosphide compound or an arsenide compound.

Abstract: A method of forming an antistatic plastic includes providing a mixture containing 10 parts by weight of crystalline silicon particles, 1 to 30 parts by weight of an encapsulant, and 0.5 to 25 parts by weight of a backsheet material. The mixture is compounded to form an antistatic plastic, wherein the encapsulant is different from the backsheet material.

Abstract: A method of forming an antistatic plastic includes providing a mixture containing 10 parts by weight of crystalline silicon particles, 1 to 30 parts by weight of an encapsulant, and 0.5 to 25 parts by weight of a backsheet material. The mixture is compounded to form an antistatic plastic, wherein the encapsulant is different from the backsheet material.

Abstract: The present disclosure provides a semiconductor device including a drift layer above the substrate, a source/drain region above the drift layer, an oxide thin film on the source/drain region, a contact on the oxide thin film, and a gate structure adjacent to source/drain region. The oxide thin film directly contacts the top surface of the source/drain region and the bottom surface of the contact. The source/drain region includes a first doping region having a first conductive type and a second doping region having a second conductive type different from the first conductive type, in which the first doping region and the second doping region forms the top surface of the source/drain region. The conduction band energy level of the oxide thin film is lower than the conduction band energy level of the first doping region.

Abstract: The present disclosure provides a semiconductor device including a semiconductor structure, a first metal element-containing structure, and a layer. The semiconductor structure includes a first semiconductor layer having a first material, a second semiconductor layer, an active region between the first semiconductor layer and the second semiconductor layer. The first metal element-containing structure is located on the semiconductor structure and includes a first metal element. The layer has a second material and a second metal element and is located between the first semiconductor layer and the first metal element-containing structure. The first material has a conduction band edge Ec and a valence band edge Ev, and the second material has a work function WF1, when the first semiconductor layer is of an n-type conductivity, the work function WF1 fulfills WF1<(Ec+Ev)/2, and when the first semiconductor layer is of a p-type conductivity, the work function WF1 fulfills WF1>(Ec+Ev)/2.

Abstract: A method of forming a semiconductor structure includes the following operations. A semiconductor epitaxial layer is formed on a first semiconductor substrate. A first side of the semiconductor epitaxial layer is adhered to a transfer substrate by an adhesive layer covering the first side of the semiconductor epitaxial layer. The semiconductor epitaxial layer and the first semiconductor substrate are turned over by the transfer substrate. The first semiconductor substrate is removed to expose a second side of the semiconductor epitaxial layer opposite to the first side. A first semiconductor doped region is formed on the second side of the semiconductor epitaxial layer. After the first semiconductor doped region is formed, the adhesive layer and the transfer substrate are removed.

Abstract: A semiconductor structure includes a semiconductor epitaxial layer, a first semiconductor well, a second semiconductor well, a source doped region, a gate structure and a drain structure. The semiconductor epitaxial layer includes a first side and a second side opposite to the first side. The first semiconductor well is located on the first side of the semiconductor epitaxial layer. The second semiconductor well is located on the second side of the semiconductor epitaxial layer. The source doped region is located in the first semiconductor well. The gate structure overlaps the first semiconductor well and the source doped region on the first side of the semiconductor epitaxial layer. The drain structure includes a semiconductor substrate. The second side of the semiconductor epitaxial layer outside the second semiconductor well includes a connecting surface. The connecting surface of the semiconductor epitaxial layer is connected to the semiconductor substrate.

Abstract: A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes a first semiconductor layer, an active region, a p-type or n-type layer, and a first metal element-containing structure. The first semiconductor layer has a surface including a first portion and a second portion. The active region is located on the first portion and includes AlGaInAs, InGaAsP, AlGaAsP or AlGaInP. The p-type or n-type layer includes an oxygen element (O) and a metal element, and is located on the second portion. The first metal element-containing structure is located on the p-type or n-type layer. The p-type or n-type layer physically contacts the first metal element-containing structure and the first semiconductor layer.

Abstract: A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes a first semiconductor layer, an active region, a p-type or n-type layer, and a first metal element-containing structure. The first semiconductor layer has a surface including a first portion and a second portion. The active region is located on the first portion and includes AlGaInAs, InGaAsP, AlGaAsP or AlGaInP. The p-type or n-type layer includes an oxygen element (O) and a metal element, and is located on the second portion. The first metal element-containing structure is located on the p-type or n-type layer. The p-type or n-type layer physically contacts the first metal element-containing structure and the first semiconductor layer.

Abstract: A semiconductor device is provided, which includes a semiconductor stack and a first contact structure. The semiconductor stack includes an active layer and has a first surface and a second surface. The first contact structure is located on the first surface and includes a first semiconductor layer, a first metal element-containing structure and a first p-type or n-type layer. The first metal element-containing structure includes a first metal element. The first p-type or n-type layer physically contacts the first semiconductor layer and the first metal element-containing structure. The first p-type or n-type layer includes an oxygen element (O) and a second metal element and has a thickness less than or equal to 20 nm, and the first semiconductor layer includes a phosphide compound or an arsenide compound.

Abstract: Provided is a composite material including a plurality of porous silicate particles having a glass phase structure, a first active metal adsorbed into the glass phase structure of the porous silicate particles, and a modified layer containing a second active metal formed on the surfaces of the porous silicate particles. The porous silicate particles have an average pore diameter of from 3 nm to 50 nm, and the first active metal includes at least one of sodium, potassium, calcium, and magnesium.

Abstract: Provided is a composite material including a plurality of porous silicate particles having a glass phase structure, a first active metal adsorbed into the glass phase structure of the porous silicate particles, and a modified layer containing a second active metal formed on the surfaces of the porous silicate particles. The porous silicate particles have an average pore diameter of from 3 nm to 50 nm, and the first active metal includes at least one of sodium, potassium, calcium, and magnesium.

Abstract: A manufacturing method of heat conductive device for an LED has steps of forming a heat sink and an engagement recess in the heat sink by cold forge, punching a heat-conducting disc to form an LED carrier having a mounting portion and a heat-conducting wall formed around the mounting portion, soldering multiple LEDs on the LED carrier, and heating the heat sink to thermally expand the heat sink and assembling the LED carrier and the heat sink so that the heat-conducting wall is assembled with the engagement recess and further chilling the heat sink to thermally retract and tightly hold the LED carrier. The manufacturing method increases contact area and reduces air gaps between the LED carrier and the heat sink to effectively enhance the heat-conducting efficiency of the LED carrier so that the LEDs are operated at a suitable operating temperature to secure a prolonged life duration.

Abstract: A heat conductive device for an LED has a heat sink and an LED carrier tightly fitted in the heat sink. The LED carrier has a mounting portion formed on one end thereof and having a first heat-conducting surface formed on a top of the mounting portion, and a heat-conducting portion formed along a perimeter of the mounting portion and having a second heat-conducting surface formed on the periphery of the heat-conducting portion. The first and second heat-conducting surfaces contact the engagement portion of the heat sink so that heat generated by LED operation is conducted to the heat sink through the heat-conducting portion, the first heat-conducting surface and the second heat-conducting surface. With the second heat-conducting surface of the LED carrier, heat can be more efficiently conducted to the heat sink and LEDs can be operated at an adequate operating temperature to prolong their life duration.

Abstract: A manufacturing method of heat conductive device for an LED has steps of forming a heat sink and an engagement recess in the heat sink by cold forge, punching a heat-conducting disc to form an LED carrier having a mounting portion and a heat-conducting wall formed around the mounting portion, soldering multiple LEDs on the LED carrier, and heating the heat sink to thermally expand the heat sink and assembling the LED carrier and the heat sink so that the heat-conducting wall is assembled with the engagement recess and further chilling the heat sink to thermally retract and tightly hold the LED carrier. The manufacturing method increases contact area and reduces air gaps between the LED carrier and the heat sink to effectively enhance the heat-conducting efficiency of the LED carrier so that the LEDs are operated at a suitable operating temperature to secure a prolonged life duration.

Abstract: An LED lighting device having heat convection and heat conduction effects has a heat dissipating assembly, a substrate, multiple LEDs and a base. The heat dissipating assembly has a housing and an outer cover. The housing has multiple air holes. The outer cover is mounted on an open top of the housing and has multiple through holes and an exterior flue protruding from the outer cover and extending into the housing. The substrate is mounted inside the housing against the outer cover and has a hole allowing the exterior flue to extend therethrough. The LEDs are mounted on the substrate and respectively correspond to the through holes. The base is attached to a bottom of the housing. The exterior flue encourages heated air to move through the exterior flue and flow out of the housing via the air holes. With such continuous and directional air movement, the LED lighting device obtains good heat-dissipating efficiency.

Abstract: An LED module comprises a heat dissipating bracket, a substrate, multiple LED assemblies and two rotatable mounting assemblies. The heat dissipating bracket has a top panel, a bottom panel and multiple flues. Each flue connects a corresponding top hole of the top panel and a bottom hole of the bottom panel. The substrate is mounted on the bottom panel and has multiple independent through holes respectively corresponding to the flues. The LED assemblies are respectively mounted on the substrate between two adjacent through holes. The rotatable mounting assemblies are respectively connected to two ends of the heat dissipating bracket, wherein the heat dissipating bracket is adapted to change an illuminating direction of the LED assemblies by rotating with the rotatable mounting assemblies. With the heat dissipating bracket and the rotatable mounting assemblies, the LED module obtains good heat-dissipating efficiency and optimal light distribution.