Abstract: A fault masking method is applied to a non-volatile memory array which includes a faulty cell and electrically connected to an address register providing a first address. The faulty cell can only output a fixed value. The content of the first address is not equal to the fixed value. The method includes: providing a complementer electrically connected between the address register and the faulty cell; providing a control word; writing the first address and the control word into the complementer; performing a complement operation on the first address and the control word by the complementer to obtain a second address, and storing the content of the second address into the faulty cell, wherein the content of the second address is equal to the fixed value. The method can reduce or eliminate the usage of redundancy in non-volatile memories, so as to reduce the manufacturing costs and improve the fabrication yield.

Abstract: A fault masking method is applied to a non-volatile memory array which includes a faulty cell and electrically connected to an address register providing a first address. The faulty cell can only output a fixed value. The content of the first address is not equal to the fixed value. The method includes: providing a complementer electrically connected between the address register and the faulty cell; providing a control word; writing the first address and the control word into the complementer; performing a complement operation on the first address and the control word by the complementer to obtain a second address, and storing the content of the second address into the faulty cell, wherein the content of the second address is equal to the fixed value. The method can reduce or eliminate the usage of redundancy in non-volatile memories, so as to reduce the manufacturing costs and improve the fabrication yield.